MDmesh™ II Series, Single FETs, MOSFETs

Results:
213
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Supplier Device Package
Package / Case
Drain to Source Voltage (Vdss)
Vgs(th) (Max) @ Id
Vgs (Max)
Operating Temperature
Grade
Mounting Type
Qualification
FET Feature
FET Type
Technology
Drive Voltage (Max Rds On, Min Rds On)
Results remaining213
Applied Filters:
MDmesh™ II
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeFET TypeOperating TemperatureDrain to Source Voltage (Vdss)Package / CaseTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdSeriesDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Supplier Device Package
STFI11NM65N
MOSFET N CH 650V 11A I2PAKFP
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
650 V
TO-262-3 Full Pack, I²Pak
MOSFET (Metal Oxide)
-
11A (Tc)
4V @ 250µA
MDmesh™ II
10V
455mOhm @ 5.5A, 10V
29 nC @ 10 V
±25V
800 pF @ 50 V
25W (Tc)
I2PAKFP (TO-281)
STI13NM60N
MOSFET N-CH 600V 11A I2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
-55°C ~ 150°C (TJ)
600 V
TO-262-3 Long Leads, I²Pak, TO-262AA
MOSFET (Metal Oxide)
-
11A (Tc)
4V @ 250µA
MDmesh™ II
10V
360mOhm @ 5.5A, 10V
30 nC @ 10 V
±25V
790 pF @ 50 V
90W (Tc)
I2PAK
STFI13NM60N
MOSFET N-CH 600V 11A I2PAKFP
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
600 V
TO-262-3 Full Pack, I²Pak
MOSFET (Metal Oxide)
-
11A (Tc)
4V @ 250µA
MDmesh™ II
10V
360mOhm @ 5.5A, 10V
30 nC @ 10 V
±25V
790 pF @ 50 V
25W (Tc)
TO-281 (I2PAKFP)
STFI26NM60N
MOSFET N-CH 600V 20A I2PAKFP
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Quantity
1 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
600 V
TO-262-3 Full Pack, I²Pak
MOSFET (Metal Oxide)
-
20A (Tc)
4V @ 250µA
MDmesh™ II
10V
165mOhm @ 10A, 10V
60 nC @ 10 V
±25V
1800 pF @ 50 V
35W (Tc)
TO-281 (I2PAKFP)
STP15NM65N
MOSFET N-CH 650V 12A TO220
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
-55°C ~ 150°C (TJ)
650 V
TO-220-3
MOSFET (Metal Oxide)
-
12A (Tc)
4V @ 250µA
MDmesh™ II
10V
380mOhm @ 6A, 10V
33.3 nC @ 10 V
±25V
983 pF @ 50 V
125W (Tc)
TO-220
STP20NM65N
MOSFET N-CH 650V 15A TO220
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
650 V
TO-220-3
MOSFET (Metal Oxide)
-
15A (Tc)
4V @ 250µA
MDmesh™ II
10V
270mOhm @ 7.5A, 10V
44 nC @ 10 V
±25V
1280 pF @ 50 V
125W (Tc)
TO-220
STF11NM65N
MOSFET N-CH 650V 11A TO220FP
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
650 V
TO-220-3 Full Pack
MOSFET (Metal Oxide)
-
11A (Tc)
4V @ 250µA
MDmesh™ II
10V
455mOhm @ 5.5A, 10V
29 nC @ 10 V
±25V
800 pF @ 50 V
25W (Tc)
TO-220FP
STF20NM65N
MOSFET N-CH 650V 15A TO220FP
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
650 V
TO-220-3 Full Pack
MOSFET (Metal Oxide)
-
15A (Tc)
4V @ 250µA
MDmesh™ II
10V
270mOhm @ 7.5A, 10V
44 nC @ 10 V
±25V
1280 pF @ 50 V
30W (Tc)
TO-220FP
STFI34NM60N
MOSFET N-CH 600V 29A I2PAKFP
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
600 V
TO-262-3 Full Pack, I²Pak
MOSFET (Metal Oxide)
-
29A (Tc)
4V @ 250µA
MDmesh™ II
10V
105mOhm @ 14.5A, 10V
84 nC @ 10 V
±25V
2722 pF @ 100 V
40W (Tc)
TO-281 (I2PAKFP)
STW36NM60N
MOSFET N-CH 600V 29A TO247-3
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
600 V
TO-247-3
MOSFET (Metal Oxide)
-
29A (Tc)
4V @ 250µA
MDmesh™ II
10V
105mOhm @ 14.5A, 10V
83.6 nC @ 10 V
±25V
2722 pF @ 100 V
210W (Tc)
TO-247-3
STW56NM60N
MOSFET N-CH 600V 45A TO247
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
600 V
TO-247-3
MOSFET (Metal Oxide)
-
45A (Tc)
4V @ 250µA
MDmesh™ II
10V
60mOhm @ 22.5A, 10V
150 nC @ 10 V
±25V
4800 pF @ 50 V
300W (Tc)
TO-247-3
STW30NM60N
MOSFET N-CH 600V 25A TO247-3
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
600 V
TO-247-3
MOSFET (Metal Oxide)
-
25A (Tc)
4V @ 250µA
MDmesh™ II
10V
130mOhm @ 12.5A, 10V
91 nC @ 10 V
±30V
2700 pF @ 50 V
190W (Tc)
TO-247-3
STW15NM60N
MOSFET N-CH 600V 14A TO247-3
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
-55°C ~ 150°C (TJ)
600 V
TO-247-3
MOSFET (Metal Oxide)
-
14A (Tc)
4V @ 250µA
MDmesh™ II
10V
299mOhm @ 7A, 10V
37 nC @ 10 V
±25V
1250 pF @ 50 V
125W (Tc)
TO-247-3
STW14NM65N
MOSFET N-CH 650V 12A TO247-3
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
650 V
TO-247-3
MOSFET (Metal Oxide)
-
12A (Tc)
4V @ 250µA
MDmesh™ II
10V
380mOhm @ 6A, 10V
45 nC @ 10 V
±25V
1300 pF @ 50 V
125W (Tc)
TO-247-3
STD8NM60N
MOSFET N-CH 600V 7A DPAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
-55°C ~ 150°C (TJ)
600 V
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET (Metal Oxide)
-
7A (Tc)
4V @ 250µA
MDmesh™ II
10V
650mOhm @ 3.5A, 10V
19 nC @ 10 V
±25V
560 pF @ 50 V
70W (Tc)
DPAK
STB23NM60N
MOSFET N-CH 600V 19A D2PAK
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C (TJ)
600 V
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
MOSFET (Metal Oxide)
-
19A (Tc)
4V @ 250µA
MDmesh™ II
10V
180mOhm @ 9.5A, 10V
60 nC @ 10 V
±25V
2050 pF @ 50 V
150W (Tc)
D2PAK
STW55NM60N
MOSFET N-CH 600V 51A TO247-3
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
600 V
TO-247-3
MOSFET (Metal Oxide)
-
51A (Tc)
4V @ 250µA
MDmesh™ II
10V
60mOhm @ 25.5A, 10V
190 nC @ 10 V
±25V
5800 pF @ 50 V
350W (Tc)
TO-247-3
STW23NM60N
MOSFET N-CH 600V 19A TO247-3
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
600 V
TO-247-3
MOSFET (Metal Oxide)
-
19A (Tc)
4V @ 250µA
MDmesh™ II
10V
180mOhm @ 9.5A, 10V
60 nC @ 10 V
±25V
2050 pF @ 50 V
150W (Tc)
TO-247-3
STB11NM60N-1
MOSFET N-CH 600V 10A I2PAK
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
600 V
TO-262-3 Long Leads, I²Pak, TO-262AA
MOSFET (Metal Oxide)
-
10A (Tc)
4V @ 250µA
MDmesh™ II
10V
450mOhm @ 5A, 10V
31 nC @ 10 V
±25V
850 pF @ 50 V
90W (Tc)
I2PAK
STB13NM50N-1
MOSFET N-CH 500V 12A I2PAK
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
500 V
TO-262-3 Long Leads, I²Pak, TO-262AA
MOSFET (Metal Oxide)
-
12A (Tc)
4V @ 250µA
MDmesh™ II
10V
320mOhm @ 6A, 10V
30 nC @ 10 V
±25V
960 pF @ 50 V
100W (Tc)
I2PAK

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.