HiPerFET™, Ultra X2 Series, Single FETs, MOSFETs

Results:
45
Manufacturer
Series
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Rds On (Max) @ Id, Vgs
Power Dissipation (Max)
Supplier Device Package
Current - Continuous Drain (Id) @ 25°C
Package / Case
Vgs(th) (Max) @ Id
Mounting Type
Operating Temperature
FET Type
Drain to Source Voltage (Vdss)
Technology
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
Grade
Qualification
Results remaining45
Applied Filters:
HiPerFET™, Ultra X2
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypePackage / CaseDrain to Source Voltage (Vdss)GradeTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsVgs(th) (Max) @ IdSeriesDrive Voltage (Max Rds On, Min Rds On)Gate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Supplier Device PackageQualification
IXFT80N65X2HV
MOSFET N-CH 650V 80A TO268HV
1+
$38.0282
5+
$35.9155
10+
$33.8028
Quantity
540 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
650 V
-
MOSFET (Metal Oxide)
-
80A (Tc)
-
5V @ 4mA
HiPerFET™, Ultra X2
10V
140 nC @ 10 V
±30V
8300 pF @ 25 V
890W (Tc)
TO-268HV (IXFT)
-
IXFN170N65X2
MOSFET N-CH 650V 170A SOT227B
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Chassis Mount
-55°C ~ 150°C (TJ)
N-Channel
SOT-227-4, miniBLOC
650 V
-
MOSFET (Metal Oxide)
-
170A (Tc)
13mOhm @ 85A, 10V
5V @ 8mA
HiPerFET™, Ultra X2
10V
434 nC @ 10 V
±30V
27000 pF @ 25 V
1170W (Tc)
SOT-227B
-
IXFH80N65X2
MOSFET N-CH 650V 80A TO247
1+
$5.5775
5+
$5.2676
10+
$4.9577
Quantity
2,438 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
650 V
-
MOSFET (Metal Oxide)
-
80A (Tc)
40mOhm @ 40A, 10V
5.5V @ 4mA
HiPerFET™, Ultra X2
10V
143 nC @ 10 V
±30V
8245 pF @ 25 V
890W (Tc)
TO-247 (IXTH)
-
IXFK100N65X2
MOSFET N-CH 650V 100A TO264
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-264-3, TO-264AA
650 V
-
MOSFET (Metal Oxide)
-
100A (Tc)
30mOhm @ 50A, 10V
5.5V @ 4mA
HiPerFET™, Ultra X2
10V
180 nC @ 10 V
±30V
11300 pF @ 25 V
1040W (Tc)
TO-264
-
IXFX100N65X2
MOSFET N-CH 650V 100A PLUS247-3
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3 Variant
650 V
-
MOSFET (Metal Oxide)
-
100A (Tc)
30mOhm @ 50A, 10V
5.5V @ 4mA
HiPerFET™, Ultra X2
10V
180 nC @ 10 V
±30V
11300 pF @ 25 V
1040W (Tc)
PLUS247™-3
-
IXFX120N65X2
MOSFET N-CH 650V 120A PLUS247-3
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3 Variant
650 V
-
MOSFET (Metal Oxide)
-
120A (Tc)
24mOhm @ 60A, 10V
5.5V @ 8mA
HiPerFET™, Ultra X2
10V
225 nC @ 10 V
±30V
15500 pF @ 25 V
1250W (Tc)
PLUS247™-3
-
IXFH34N65X2
MOSFET N-CH 650V 34A TO247
1+
$3.5493
5+
$3.3521
10+
$3.1549
Quantity
18,620 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
650 V
-
MOSFET (Metal Oxide)
-
34A (Tc)
105mOhm @ 17A, 10V
5.5V @ 2.5mA
HiPerFET™, Ultra X2
10V
56 nC @ 10 V
±30V
3330 pF @ 25 V
540W (Tc)
TO-247 (IXTH)
-
IXFP26N65X2
IXFP26N65X2
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
650 V
-
MOSFET (Metal Oxide)
-
26A (Tc)
130mOhm @ 500mA, 10V
5V @ 2.5mA
HiPerFET™, Ultra X2
10V
45 nC @ 10 V
±30V
2450 pF @ 25 V
460W (Tc)
TO-220
-
IXFP18N65X2
MOSFET N-CH 650V 18A TO220AB
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
650 V
-
MOSFET (Metal Oxide)
-
18A (Tc)
200mOhm @ 9A, 10V
5V @ 1.5mA
HiPerFET™, Ultra X2
10V
29 nC @ 10 V
±30V
1520 pF @ 25 V
290W (Tc)
TO-220
-
IXFA22N65X2-TRL
MOSFET N-CH 650V 22A TO263
1+
$5.0704
5+
$4.7887
10+
$4.5070
Quantity
2,304 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
650 V
-
MOSFET (Metal Oxide)
-
22A (Tc)
145mOhm @ 11A, 10V
5V @ 1.5mA
HiPerFET™, Ultra X2
10V
37 nC @ 10 V
±30V
2190 pF @ 25 V
390W (Tc)
TO-263 (D2Pak)
-
IXFP22N65X2M
MOSFET N-CH 650V 22A TO220
1+
$4.3099
5+
$4.0704
10+
$3.8310
Quantity
2,300 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack, Isolated Tab
650 V
-
MOSFET (Metal Oxide)
-
22A (Tc)
145mOhm @ 11A, 10V
5V @ 1.5mA
HiPerFET™, Ultra X2
10V
37 nC @ 10 V
±30V
2190 pF @ 25 V
37W (Tc)
TO-220 Isolated Tab
-
IXFA18N65X2
MOSFET N-CH 650V 18A TO263
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
650 V
-
MOSFET (Metal Oxide)
-
18A (Tc)
200mOhm @ 9A, 10V
5V @ 1.5mA
HiPerFET™, Ultra X2
10V
29 nC @ 10 V
±30V
1520 pF @ 25 V
290W (Tc)
TO-263 (D2Pak)
-
IXFA34N65X2-TRL
MOSFET N-CH 650V 34A TO263
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
650 V
-
MOSFET (Metal Oxide)
-
34A (Tc)
100mOhm @ 17A, 10V
5V @ 2.5mA
HiPerFET™, Ultra X2
10V
56 nC @ 10 V
±30V
3230 pF @ 25 V
540W (Tc)
TO-263 (D2Pak)
-
IXFP18N65X2M
MOSFET N-CH 650V 18A TO220
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack, Isolated Tab
650 V
-
MOSFET (Metal Oxide)
-
18A (Tc)
200mOhm @ 9A, 10V
5V @ 1.5mA
HiPerFET™, Ultra X2
10V
29 nC @ 10 V
±30V
1520 pF @ 25 V
290W (Tc)
TO-220 Isolated Tab
-
IXFH18N65X2
MOSFET N-CH 650V 18A TO247
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
650 V
-
MOSFET (Metal Oxide)
-
18A (Tc)
200mOhm @ 9A, 10V
5V @ 1.5mA
HiPerFET™, Ultra X2
10V
29 nC @ 10 V
±30V
1520 pF @ 25 V
290W (Tc)
TO-247 (IXTH)
-
IXFP8N65X2
MOSFET N-CH 650V 8A TO220
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
650 V
-
MOSFET (Metal Oxide)
-
8A (Tc)
450mOhm @ 4A, 10V
5V @ 250µA
HiPerFET™, Ultra X2
10V
11 nC @ 10 V
±30V
790 pF @ 25 V
150W (Tc)
TO-220-3
-
IXFA8N65X2
MOSFET N-CH 650V 8A TO263
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
650 V
-
MOSFET (Metal Oxide)
-
8A (Tc)
450mOhm @ 4A, 10V
5V @ 250µA
HiPerFET™, Ultra X2
10V
11 nC @ 10 V
±30V
790 pF @ 25 V
150W (Ta)
TO-263 (D2Pak)
-
IXFA12N65X2-TRL
MOSFET N-CH 650V 12A TO263
1+
$7.6056
5+
$7.1831
10+
$6.7606
Quantity
1,600 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
650 V
-
MOSFET (Metal Oxide)
-
12A (Tc)
310mOhm @ 6A, 10V
5V @ 250µA
HiPerFET™, Ultra X2
10V
18.5 nC @ 10 V
±30V
1134 pF @ 25 V
180W (Tc)
TO-263 (D2Pak)
-
IXFK120N65X2
MOSFET N-CH 650V 120A TO264
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-264-3, TO-264AA
650 V
-
MOSFET (Metal Oxide)
-
120A (Tc)
24mOhm @ 60A, 10V
5.5V @ 8mA
HiPerFET™, Ultra X2
10V
225 nC @ 10 V
±30V
15500 pF @ 25 V
1250W (Tc)
TO-264AA
-
IXFP14N55X2M
IXFP14N55X2M
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Quantity
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PCB Symbol, Footprint & 3D Model
-
-
-
-
-
-
-
-
-
-
-
HiPerFET™, Ultra X2
-
-
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About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.