HiPerFET™, Ultra X2 Series, Single FETs, MOSFETs

Results:
45
Manufacturer
Series
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Rds On (Max) @ Id, Vgs
Power Dissipation (Max)
Supplier Device Package
Current - Continuous Drain (Id) @ 25°C
Package / Case
Vgs(th) (Max) @ Id
Mounting Type
Operating Temperature
FET Type
Drain to Source Voltage (Vdss)
Technology
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
Grade
Qualification
Results remaining45
Applied Filters:
HiPerFET™, Ultra X2
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypePackage / CaseSupplier Device PackageDrain to Source Voltage (Vdss)GradeTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdSeriesDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
IXFP8N65X2M
MOSFET N-CH 650V 8A TO220
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack, Isolated Tab
TO-220 Isolated Tab
650 V
-
MOSFET (Metal Oxide)
-
8A (Tc)
5V @ 250µA
HiPerFET™, Ultra X2
10V
450mOhm @ 4A, 10V
11 nC @ 10 V
±30V
790 pF @ 25 V
150W (Tc)
-
IXFN120N65X2
MOSFET N-CH 650V 108A SOT227B
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Chassis Mount
-55°C ~ 150°C (TJ)
N-Channel
SOT-227-4, miniBLOC
SOT-227B
650 V
-
MOSFET (Metal Oxide)
-
108A (Tc)
5.5V @ 8mA
HiPerFET™, Ultra X2
10V
24mOhm @ 54A, 10V
225 nC @ 10 V
±30V
15500 pF @ 25 V
890W (Tc)
-
IXFP12N65X2
MOSFET N-CH 650V 12A TO220AB
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
TO-220-3
650 V
-
MOSFET (Metal Oxide)
-
12A (Tc)
5V @ 250µA
HiPerFET™, Ultra X2
10V
310mOhm @ 6A, 10V
18.5 nC @ 10 V
±30V
1134 pF @ 25 V
180W (Tc)
-
IXFA12N65X2
MOSFET N-CH 650V 12A TO263AA
1+
$5.0704
5+
$4.7887
10+
$4.5070
Quantity
1,300 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AA (IXFA)
650 V
-
MOSFET (Metal Oxide)
-
12A (Tc)
5V @ 250µA
HiPerFET™, Ultra X2
10V
310mOhm @ 6A, 10V
18.5 nC @ 10 V
±30V
1134 pF @ 25 V
180W (Tc)
-
IXFH60N65X2-4
MOSFET N-CH 650V 60A TO247-4L
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-4
TO-247-4L
650 V
-
MOSFET (Metal Oxide)
-
60A (Tc)
5V @ 4mA
HiPerFET™, Ultra X2
10V
52mOhm @ 30A, 10V
108 nC @ 10 V
±30V
6300 pF @ 25 V
780W (Tc)
-
IXFP34N65X2M
MOSFET N-CH 650V 34A TO220
1+
$5.5775
5+
$5.2676
10+
$4.9577
Quantity
139 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack, Isolated Tab
TO-220 Isolated Tab
650 V
-
MOSFET (Metal Oxide)
-
34A (Tc)
5V @ 1.5mA
HiPerFET™, Ultra X2
10V
100mOhm @ 17A, 10V
56 nC @ 10 V
±30V
3230 pF @ 25 V
40W (Tc)
-
IXFA22N65X2
MOSFET N-CH 650V 22A TO263
1+
$5.0704
5+
$4.7887
10+
$4.5070
Quantity
6,400 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263HV
650 V
-
MOSFET (Metal Oxide)
-
22A (Tc)
5.5V @ 1.5mA
HiPerFET™, Ultra X2
10V
160mOhm @ 11A, 10V
38 nC @ 10 V
±30V
2310 pF @ 25 V
390W (Tc)
-
IXFP34N65X2
MOSFET N-CH 650V 34A TO220AB
1+
$12.6761
5+
$11.9718
10+
$11.2676
Quantity
9,923 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
TO-220-3
650 V
-
MOSFET (Metal Oxide)
-
34A (Tc)
5.5V @ 2.5mA
HiPerFET™, Ultra X2
10V
105mOhm @ 17A, 10V
56 nC @ 10 V
±30V
3330 pF @ 25 V
540W (Tc)
-
IXFH22N65X2
MOSFET N-CH 650V 22A TO247
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247 (IXTH)
650 V
-
MOSFET (Metal Oxide)
-
22A (Tc)
5.5V @ 1.5mA
HiPerFET™, Ultra X2
10V
160mOhm @ 11A, 10V
38 nC @ 10 V
±30V
2310 pF @ 25 V
390W (Tc)
-
IXFP22N65X2
MOSFET N-CH 650V 22A TO220
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
TO-220-3
650 V
-
MOSFET (Metal Oxide)
-
22A (Tc)
5.5V @ 1.5mA
HiPerFET™, Ultra X2
10V
160mOhm @ 11A, 10V
38 nC @ 10 V
±30V
2310 pF @ 25 V
390W (Tc)
-
IXFH46N65X2
MOSFET N-CH 650V 46A TO247
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247 (IXTH)
650 V
-
MOSFET (Metal Oxide)
-
46A (Tc)
5.5V @ 4mA
HiPerFET™, Ultra X2
10V
76mOhm @ 23A, 10V
75 nC @ 10 V
±30V
4810 pF @ 25 V
660W (Tc)
-
IXFH60N65X2
MOSFET N-CH 650V 60A TO247
1+
$19.0141
5+
$17.9577
10+
$16.9014
Quantity
15,892 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247 (IXTH)
650 V
-
MOSFET (Metal Oxide)
-
60A (Tc)
5.5V @ 4mA
HiPerFET™, Ultra X2
10V
52mOhm @ 30A, 10V
107 nC @ 10 V
±30V
6180 pF @ 25 V
780W (Tc)
-
IXFH80N65X2-4
MOSFET N-CH 650V 80A TO247-4L
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-4
TO-247-4L
650 V
-
MOSFET (Metal Oxide)
-
80A (Tc)
5V @ 4mA
HiPerFET™, Ultra X2
10V
38mOhm @ 500mA, 10V
140 nC @ 10 V
±30V
8300 pF @ 25 V
890W (Tc)
-
IXFB150N65X2
MOSFET N-CH 650V 150A PLUS264
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-264-3, TO-264AA
PLUS264™
650 V
-
MOSFET (Metal Oxide)
-
150A (Tc)
5.5V @ 8mA
HiPerFET™, Ultra X2
10V
17mOhm @ 75A, 10V
430 nC @ 10 V
±30V
20400 pF @ 25 V
1560W (Tc)
-
IXFP12N65X2M
MOSFET N-CH 650V 12A TO220
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack, Isolated Tab
TO-220 Isolated Tab
650 V
-
MOSFET (Metal Oxide)
-
12A (Tc)
5V @ 250µA
HiPerFET™, Ultra X2
10V
310mOhm @ 6A, 10V
18.5 nC @ 10 V
±30V
1134 pF @ 25 V
40W (Tc)
-
IXFN150N65X2
MOSFET N-CH 650V 145A SOT227B
Contact us
Quantity
2,201 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Chassis Mount
-55°C ~ 150°C (TJ)
N-Channel
SOT-227-4, miniBLOC
SOT-227B
650 V
-
MOSFET (Metal Oxide)
-
145A (Tc)
5V @ 8mA
HiPerFET™, Ultra X2
10V
17mOhm @ 75A, 10V
355 nC @ 10 V
±30V
21000 pF @ 25 V
1040W (Tc)
-
IXFY8N65X2
MOSFET N-CH 650V 8A TO252AA
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
650 V
-
MOSFET (Metal Oxide)
-
8A (Tc)
5V @ 250µA
HiPerFET™, Ultra X2
10V
450mOhm @ 4A, 10V
11 nC @ 10 V
±30V
790 pF @ 25 V
150W (Tc)
-
IXFH26N65X2
IXFH26N65X2
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247 (IXFH)
650 V
-
MOSFET (Metal Oxide)
-
26A (Tc)
5V @ 2.5mA
HiPerFET™, Ultra X2
10V
130mOhm @ 500mA, 10V
45 nC @ 10 V
±30V
2450 pF @ 25 V
460W (Tc)
-
IXFK80N65X2
MOSFET N-CH 650V 80A TO264
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-264-3, TO-264AA
TO-264AA
650 V
-
MOSFET (Metal Oxide)
-
80A (Tc)
5.5V @ 4mA
HiPerFET™, Ultra X2
10V
40mOhm @ 40A, 10V
143 nC @ 10 V
±30V
8245 pF @ 25 V
890W (Tc)
-
IXFN100N65X2
MOSFET N-CH 650V 78A SOT227B
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Chassis Mount
-55°C ~ 150°C (TJ)
N-Channel
SOT-227-4, miniBLOC
SOT-227B
650 V
-
MOSFET (Metal Oxide)
-
78A (Tc)
5V @ 4mA
HiPerFET™, Ultra X2
10V
30mOhm @ 50A, 10V
183 nC @ 10 V
±30V
10800 pF @ 25 V
595W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.