Depletion Series, Single FETs, MOSFETs

Results:
62
Manufacturer
Series
Input Capacitance (Ciss) (Max) @ Vds
Rds On (Max) @ Id, Vgs
Gate Charge (Qg) (Max) @ Vgs
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Supplier Device Package
Vgs(th) (Max) @ Id
Package / Case
Drain to Source Voltage (Vdss)
Operating Temperature
Mounting Type
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Technology
Vgs (Max)
FET Feature
Grade
Qualification
Results remaining62
Applied Filters:
Depletion
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypeGradePackage / CaseTechnologySupplier Device PackageFET FeatureVgs(th) (Max) @ IdSeriesDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
IXTH1N170DHV
MOSFET N-CH 1700V 1A TO247HV
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
TO-247-3 Variant
MOSFET (Metal Oxide)
TO-247HV
Depletion Mode
4.5V @ 250µA
Depletion
1700 V
1A (Tj)
0V
16Ohm @ 500mA, 0V
47 nC @ 5 V
±20V
3090 pF @ 25 V
290W (Tc)
-
IXTT2N170D2
MOSFET N-CH 1700V 2A TO268
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
MOSFET (Metal Oxide)
TO-268AA
Depletion Mode
-
Depletion
1700 V
2A (Tj)
-
6.5Ohm @ 1A, 0V
110 nC @ 5 V
±20V
3650 pF @ 25 V
568W (Tc)
-
IXTH16N50D2
MOSFET N-CH 500V 16A TO247-3
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
TO-247-3
MOSFET (Metal Oxide)
TO-247 (IXTH)
Depletion Mode
-
Depletion
500 V
16A (Tc)
0V
240mOhm @ 8A, 0V
199 nC @ 5 V
±20V
5250 pF @ 25 V
695W (Tc)
-
IXTP1R6N100D2
MOSFET N-CH 1000V 1.6A TO220AB
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
TO-220-3
MOSFET (Metal Oxide)
TO-220-3
Depletion Mode
-
Depletion
1000 V
1.6A (Tc)
10V
10Ohm @ 800mA, 0V
27 nC @ 5 V
±20V
645 pF @ 25 V
100W (Tc)
-
IXTA08N100D2-TRL
MOSFET N-CH 1000V 800MA TO263
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
MOSFET (Metal Oxide)
TO-263 (D2Pak)
Depletion Mode
4V @ 25µA
Depletion
1000 V
800mA (Tj)
0V
21Ohm @ 400mA, 0V
14.6 nC @ 5 V
±20V
325 pF @ 25 V
60W (Tc)
-
IXTY02N50D-TRL
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Quantity
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PCB Symbol, Footprint & 3D Model
-
-
-
-
-
-
-
Depletion Mode
-
Depletion
-
250mA (Tj)
-
-
-
±20V
-
-
-
IXTY1R6N100D2-TRL
MOSFET N-CH 1000V 1.6A TO252
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET (Metal Oxide)
TO-252AA
Depletion Mode
4.5V @ 100µA
Depletion
1000 V
1.6A (Tj)
0V
10Ohm @ 800mA, 0V
27 nC @ 5 V
±20V
645 pF @ 25 V
100W (Tc)
-
IXTY08N100D2-TRL
MOSFET N-CH 1000V 800MA TO252
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Quantity
1 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET (Metal Oxide)
TO-252AA
Depletion Mode
4V @ 25µA
Depletion
1000 V
800mA (Tj)
0V
21Ohm @ 400mA, 0V
14.6 nC @ 5 V
±20V
325 pF @ 25 V
60W (Tc)
-
IXTA1R6N100D2-TRL
MOSFET N-CH 1000V 1.6A TO263
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
MOSFET (Metal Oxide)
TO-263 (D2Pak)
Depletion Mode
4.5V @ 100µA
Depletion
1000 V
1.6A (Tj)
0V
10Ohm @ 800mA, 0V
27 nC @ 5 V
±20V
645 pF @ 25 V
100W (Tc)
-
IXTA3N100D2HV-TRL
MOSFET N-CH 1000V 3A TO263HV
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
MOSFET (Metal Oxide)
TO-263HV
Depletion Mode
4.5V @ 250µA
Depletion
1000 V
3A (Tj)
0V
6Ohm @ 1.5A, 0V
37.5 nC @ 5 V
±20V
1020 pF @ 25 V
125W (Tc)
-
IXTA3N100D2-TRL
MOSFET N-CH 1000V 3A TO263
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
MOSFET (Metal Oxide)
TO-263 (D2Pak)
Depletion Mode
4.5V @ 250µA
Depletion
1000 V
3A (Tj)
0V
6Ohm @ 1.5A, 0V
37.5 nC @ 5 V
±20V
1020 pF @ 25 V
125W (Tc)
-
IXTA08N100D2HV-TRL
MOSFET N-CH 1000V 800MA TO263HV
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
MOSFET (Metal Oxide)
TO-263HV
Depletion Mode
4V @ 25µA
Depletion
1000 V
800mA (Tj)
0V
21Ohm @ 400mA, 0V
14.6 nC @ 5 V
±20V
325 pF @ 25 V
60W (Tc)
-
IXTA08N100D2HV
MOSFET N-CH 1000V 800MA TO263HV
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
MOSFET (Metal Oxide)
TO-263HV
Depletion Mode
4V @ 25µA
Depletion
1000 V
800mA (Tj)
0V
21Ohm @ 400mA, 0V
14.6 nC @ 5 V
±20V
325 pF @ 25 V
60W (Tc)
-
IXTA3N50D2-TRL
MOSFET N-CH 500V 3A TO263
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
MOSFET (Metal Oxide)
TO-263 (D2Pak)
Depletion Mode
4.5V @ 250µA
Depletion
500 V
3A (Tj)
0V
1.5Ohm @ 1.5A, 0V
40 nC @ 5 V
±20V
1070 pF @ 25 V
125W (Tc)
-
IXTU02N50D
MOSFET N-CH 500V 200MA TO251
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
TO-251-3 Short Leads, IPak, TO-251AA
MOSFET (Metal Oxide)
TO-251AA
Depletion Mode
5V @ 25µA
Depletion
500 V
200mA (Tc)
10V
30Ohm @ 50mA, 0V
-
±20V
120 pF @ 25 V
1.1W (Ta), 25W (Tc)
-
IXTY02N50D
MOSFET N-CH 500V 200MA TO252
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET (Metal Oxide)
TO-252AA
Depletion Mode
-
Depletion
500 V
200mA (Tc)
-
30Ohm @ 50mA, 0V
-
±20V
120 pF @ 25 V
1.1W (Ta), 25W (Tc)
-
IXTP02N50D
MOSFET N-CH 500V 200MA TO220AB
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
TO-220-3
MOSFET (Metal Oxide)
TO-220-3
Depletion Mode
5V @ 25µA
Depletion
500 V
200mA (Tc)
10V
30Ohm @ 50mA, 0V
-
±20V
120 pF @ 25 V
1.1W (Ta), 25W (Tc)
-
IXTA6N100D2-TRL
MOSFET N-CH 1000V 6A TO263
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
MOSFET (Metal Oxide)
TO-263 (D2Pak)
Depletion Mode
4.5V @ 250µA
Depletion
1000 V
6A (Tj)
0V
2.2Ohm @ 3A, 0V
95 nC @ 5 V
±20V
2650 pF @ 25 V
300W (Tc)
-
IXTH10N100D
MOSFET N-CH 1000V 10A TO247
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
TO-247-3
MOSFET (Metal Oxide)
TO-247 (IXTH)
Depletion Mode
3.5V @ 250µA
Depletion
1000 V
10A (Tc)
10V
1.4Ohm @ 10A, 10V
130 nC @ 10 V
±30V
2500 pF @ 25 V
400W (Tc)
-
IXTT10N100D2
MOSFET N-CH 1000V 10A TO268
1+
$38.0282
5+
$35.9155
10+
$33.8028
Quantity
30 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
MOSFET (Metal Oxide)
TO-268AA
Depletion Mode
-
Depletion
1000 V
10A (Tc)
10V
1.5Ohm @ 5A, 10V
200 nC @ 5 V
±20V
5320 pF @ 25 V
695W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.