CoolMOS™ CP Series, Single FETs, MOSFETs

Results:
25
Manufacturer
Series
Gate Charge (Qg) (Max) @ Vgs
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Power Dissipation (Max)
Supplier Device Package
Package / Case
Operating Temperature
Drain to Source Voltage (Vdss)
FET Feature
FET Type
Grade
Mounting Type
Qualification
Technology
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Results remaining25
Applied Filters:
CoolMOS™ CP
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypePackage / CaseGradeSupplier Device PackageTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdSeriesDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
IPD50R520CP
MOSFET N-CH 500V 7.1A TO252-3
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
PG-TO252-3-11
MOSFET (Metal Oxide)
-
7.1A (Tc)
3.5V @ 250µA
CoolMOS™ CP
500 V
10V
520mOhm @ 3.8A, 10V
17 nC @ 10 V
±20V
680 pF @ 100 V
66W (Tc)
-
IPB60R099CPAATMA1
MOSFET N-CH 600V 31A TO263-3
1+
$52.9859
5+
$50.0423
10+
$47.0986
Quantity
12,998 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
PG-TO263-3-2
MOSFET (Metal Oxide)
-
31A (Tc)
3.5V @ 1.2mA
CoolMOS™ CP
600 V
10V
105mOhm @ 18A, 10V
80 nC @ 10 V
±20V
2800 pF @ 100 V
255W (Tc)
-
IPL60R385CPAUMA1
MOSFET N-CH 600V 9A 4VSON
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
4-PowerTSFN
-
PG-VSON-4
MOSFET (Metal Oxide)
-
9A (Tc)
3.5V @ 340µA
CoolMOS™ CP
600 V
10V
385mOhm @ 5.2A, 10V
17 nC @ 10 V
±20V
790 pF @ 100 V
83W (Tc)
-
IPD50R399CPATMA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
PG-TO252-3-313
MOSFET (Metal Oxide)
-
9A (Tc)
3.5V @ 330µA
CoolMOS™ CP
500 V
10V
399mOhm @ 4.9A, 10V
23 nC @ 10 V
±20V
890 pF @ 100 V
83W (Tc)
-
IPL60R299CPAUMA1
MOSFET N-CH 600V 11.1A 4VSON
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
4-PowerTSFN
-
PG-VSON-4
MOSFET (Metal Oxide)
-
11.1A (Tc)
3.5V @ 440µA
CoolMOS™ CP
600 V
10V
299mOhm @ 6.6A, 10V
22 nC @ 10 V
±20V
1100 pF @ 100 V
96W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.