CoolMOS™ C6 Series, Single FETs, MOSFETs

Results:
34
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Vgs(th) (Max) @ Id
Supplier Device Package
Package / Case
Operating Temperature
Mounting Type
Drain to Source Voltage (Vdss)
FET Feature
FET Type
Grade
Qualification
Technology
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Results remaining34
Applied Filters:
CoolMOS™ C6
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypePackage / CaseGradeSupplier Device PackageTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CSeriesDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
IPD60R950C6
MOSFET N-CH 600V 4.4A TO252-3
1+
$8.8732
5+
$8.3803
10+
$7.8873
Quantity
2,500 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
PG-TO252-3
MOSFET (Metal Oxide)
-
4.4A (Tc)
CoolMOS™ C6
600 V
10V
950mOhm @ 1.5A, 10V
3.5V @ 130µA
13 nC @ 10 V
±20V
280 pF @ 100 V
37W (Tc)
-
IPB60R280C6ATMA1
MOSFET N-CH 600V 13.8A D2PAK
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
PG-TO263-3
MOSFET (Metal Oxide)
-
13.8A (Tc)
CoolMOS™ C6
600 V
10V
280mOhm @ 6.5A, 10V
3.5V @ 430µA
43 nC @ 10 V
±20V
950 pF @ 100 V
104W (Tc)
-
IPB60R160C6ATMA1
MOSFET N-CH 600V 23.8A D2PAK
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
PG-TO263-3
MOSFET (Metal Oxide)
-
23.8A (Tc)
CoolMOS™ C6
600 V
10V
160mOhm @ 11.3A, 10V
3.5V @ 750µA
75 nC @ 10 V
±20V
1660 pF @ 100 V
176W (Tc)
-
IPD60R3K3C6ATMA1
MOSFET N-CH 600V 1.7A TO252-3
1+
$8.8732
5+
$8.3803
10+
$7.8873
Quantity
2,500 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
PG-TO252-3
MOSFET (Metal Oxide)
-
1.7A (Tc)
CoolMOS™ C6
600 V
10V
3.3Ohm @ 500mA, 10V
3.5V @ 40µA
4.6 nC @ 10 V
±20V
93 pF @ 100 V
18.1W (Tc)
-
IPD60R1K4C6ATMA1
MOSFET N-CH 600V 3.2A TO252-3
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
PG-TO252-3
MOSFET (Metal Oxide)
-
3.2A (Tc)
CoolMOS™ C6
600 V
10V
1.4Ohm @ 1.1A, 10V
3.5V @ 90µA
9.4 nC @ 10 V
±20V
200 pF @ 100 V
28.4W (Tc)
-
IPB60R099C6ATMA1
MOSFET N-CH 600V 37.9A D2PAK
1+
$5.8310
5+
$5.5070
10+
$5.1831
Quantity
3,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
PG-TO263-3
MOSFET (Metal Oxide)
-
37.9A (Tc)
CoolMOS™ C6
600 V
10V
99mOhm @ 18.1A, 10V
3.5V @ 1.21mA
119 nC @ 10 V
±20V
2660 pF @ 100 V
278W (Tc)
-
IPD65R950C6ATMA1
MOSFET N-CH 650V 4.5A TO252-3
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
PG-TO252-3
MOSFET (Metal Oxide)
-
4.5A (Tc)
CoolMOS™ C6
650 V
10V
950mOhm @ 1.5A, 10V
3.5V @ 200µA
15.3 nC @ 10 V
±20V
328 pF @ 100 V
37W (Tc)
-
IPL65R1K0C6SATMA1
MOSFET N-CH 650V 4.2A THIN-PAK
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
8-PowerTDFN
-
PG-TSON-8-2
MOSFET (Metal Oxide)
-
4.2A (Tc)
CoolMOS™ C6
650 V
10V
1Ohm @ 1.5A, 10V
3.5V @ 150µA
15 nC @ 10 V
±20V
328 pF @ 100 V
34.7W (Tc)
-
IPL65R1K5C6SATMA1
MOSFET N-CH 650V 3A THIN-PAK
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
8-PowerTDFN
-
PG-TSON-8-2
MOSFET (Metal Oxide)
-
3A (Tc)
CoolMOS™ C6
650 V
10V
1.5Ohm @ 1A, 10V
3.5V @ 100µA
11 nC @ 10 V
±20V
225 pF @ 100 V
26.6W (Tc)
-
IPL65R650C6SATMA1
MOSFET N-CH 650V 6.7A THIN-PAK
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
8-PowerTDFN
-
PG-TSON-8-2
MOSFET (Metal Oxide)
-
6.7A (Tc)
CoolMOS™ C6
650 V
10V
650mOhm @ 2.1A, 10V
3.5V @ 210µA
21 nC @ 10 V
±20V
440 pF @ 100 V
56.8W (Tc)
-
IPL60R1K5C6SATMA1
MOSFET N-CH 600V 3A THIN-PAK
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
8-PowerTDFN
-
8-ThinPak (5x6)
MOSFET (Metal Oxide)
-
3A (Tc)
CoolMOS™ C6
600 V
10V
1.5Ohm @ 1.1A, 10V
3.5V @ 90µA
9.4 nC @ 10 V
±20V
200 pF @ 100 V
26.6W (Tc)
-
IPD65R380C6ATMA1
MOSFET N-CH 650V 10.6A TO252-3
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
PG-TO252-3
MOSFET (Metal Oxide)
-
10.6A (Tc)
CoolMOS™ C6
650 V
10V
380mOhm @ 3.2A, 10V
3.5V @ 320µA
39 nC @ 10 V
±20V
710 pF @ 100 V
83W (Tc)
-
IPD60R380C6ATMA1
MOSFET N-CH 600V 10.6A TO252-3
1+
$3.2958
5+
$3.1127
10+
$2.9296
Quantity
5,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
PG-TO252-3
MOSFET (Metal Oxide)
-
10.6A (Tc)
CoolMOS™ C6
600 V
10V
380mOhm @ 3.8A, 10V
3.5V @ 320µA
32 nC @ 10 V
±20V
700 pF @ 100 V
83W (Tc)
-
IPW65R037C6FKSA1
MOSFET N-CH 650V 83.2A TO247-3
1+
$172.3944
5+
$162.8169
10+
$153.2394
Quantity
960 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
-
PG-TO247-3
MOSFET (Metal Oxide)
-
83.2A (Tc)
CoolMOS™ C6
650 V
10V
37mOhm @ 33.1A, 10V
3.5V @ 3.3mA
330 nC @ 10 V
±20V
7240 pF @ 100 V
500W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.