PowerTrench® Series, Single FETs, MOSFETs

Results:
1,466
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Supplier Device Package
Vgs(th) (Max) @ Id
Package / Case
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
Vgs (Max)
Operating Temperature
FET Feature
Configuration
Power - Max
FET Type
Grade
Mounting Type
Qualification
Technology
Results remaining1,466
Applied Filters:
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeFET TypePackage / CaseSeriesOperating TemperatureGradeSupplier Device PackageTechnologyFET FeatureVgs(th) (Max) @ IdDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
FDD850N10L
MOSFET N-CH 100V 15.7A DPAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
PowerTrench®
-55°C ~ 175°C (TJ)
-
TO-252AA
MOSFET (Metal Oxide)
-
2.5V @ 250µA
100 V
15.7A (Tc)
5V, 10V
75mOhm @ 12A, 10V
28.9 nC @ 10 V
±20V
1465 pF @ 25 V
50W (Tc)
-
FDD86381-F085
MOSFET N-CH 80V 25A DPAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
PowerTrench®
-55°C ~ 175°C (TJ)
Automotive
TO-252AA
MOSFET (Metal Oxide)
-
4V @ 250µA
80 V
25A (Tc)
10V
21mOhm @ 25A, 10V
21 nC @ 10 V
±20V
866 pF @ 40 V
48.4W (Tj)
AEC-Q101
FDMS0349
POWER FIELD-EFFECT TRANSISTOR
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-PowerTDFN
PowerTrench®
-55°C ~ 150°C (TJ)
-
8-PQFN (5x6), Power56
MOSFET (Metal Oxide)
-
3V @ 250µA
30 V
14A (Ta), 20A (Tc)
4.5V, 10V
8mOhm @ 14A, 10V
22 nC @ 10 V
±20V
1410 pF @ 15 V
2.5W (Ta), 27W (Tc)
-
FDMS0343S
POWER FIELD-EFFECT TRANSISTOR
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-PowerTDFN
PowerTrench®
-55°C ~ 150°C (TJ)
-
8-PQFN (5x6), Power56
MOSFET (Metal Oxide)
-
3V @ 1mA
25 V
28A (Ta), 49A (Tc)
4.5V, 10V
1.95mOhm @ 28A, 10V
69 nC @ 10 V
±20V
4515 pF @ 13 V
2.5W (Ta), 83W (Tc)
-
FDMC8015L
MOSFET N-CH 40V 7A/18A 8MLP
1+
$0.9380
5+
$0.8859
10+
$0.8338
Quantity
12,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-PowerWDFN
PowerTrench®
-55°C ~ 150°C (TJ)
-
8-MLP (3.3x3.3)
MOSFET (Metal Oxide)
-
3V @ 250µA
40 V
7A (Ta), 18A (Tc)
4.5V, 10V
26mOhm @ 7A, 10V
19 nC @ 10 V
±20V
945 pF @ 20 V
2.3W (Ta), 24W (Tc)
-
FDMA905P
MOSFET P-CH 12V 10A 6MICROFET
1+
$1.1408
5+
$1.0775
10+
$1.0141
Quantity
65,683 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
6-WDFN Exposed Pad
PowerTrench®
-55°C ~ 150°C (TJ)
-
6-MicroFET (2x2)
MOSFET (Metal Oxide)
-
1V @ 250µA
12 V
10A (Ta)
1.8V, 4.5V
16mOhm @ 10A, 4.5V
29 nC @ 6 V
±8V
3405 pF @ 6 V
2.4W (Ta)
-
FDD8445
MOSFET N-CH 40V 70A TO252AA
1+
$0.6592
5+
$0.6225
10+
$0.5859
Quantity
10,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
PowerTrench®
-55°C ~ 175°C (TJ)
-
TO-252AA
MOSFET (Metal Oxide)
-
4V @ 250µA
40 V
70A (Tc)
10V
8.7mOhm @ 50A, 10V
59 nC @ 10 V
±20V
4050 pF @ 25 V
79W (Tc)
-
FDS6690A-NBNP006
SINGLE N-CHANNEL, LOGIC LEVEL, P
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-SOIC (0.154", 3.90mm Width)
PowerTrench®
-55°C ~ 150°C (TJ)
-
8-SOIC
MOSFET (Metal Oxide)
-
3V @ 250µA
30 V
11A (Ta)
4.5V, 10V
12.5mOhm @ 11A, 10V
16 nC @ 5 V
±20V
1205 pF @ 15 V
1W (Ta)
-
FDFS2P753Z
POWER FIELD-EFFECT TRANSISTOR, 3
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
8-SOIC (0.154", 3.90mm Width)
PowerTrench®
-55°C ~ 150°C (TJ)
-
8-SOIC
MOSFET (Metal Oxide)
Schottky Diode (Isolated)
3V @ 250µA
30 V
3A (Ta)
-
115mOhm @ 3A, 10V
9.3 nC @ 10 V
±25V
455 pF @ 10 V
1.6W (Ta)
-
FDFMA2P853
MOSFET P-CH 20V 3A 6MICROFET
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
6-VDFN Exposed Pad
PowerTrench®
-55°C ~ 150°C (TJ)
-
6-MicroFET (2x2)
MOSFET (Metal Oxide)
Schottky Diode (Isolated)
1.3V @ 250µA
20 V
3A (Ta)
1.8V, 4.5V
120mOhm @ 3A, 4.5V
6 nC @ 4.5 V
±8V
435 pF @ 10 V
1.4W (Ta)
-
FDD8796
POWER FIELD-EFFECT TRANSISTOR, 3
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
PowerTrench®
-55°C ~ 175°C (TJ)
-
TO-252 (DPAK)
MOSFET (Metal Oxide)
-
2.5V @ 250µA
25 V
35A (Tc)
4.5V, 10V
5.7mOhm @ 35A, 10V
52 nC @ 10 V
±20V
2610 pF @ 13 V
88W (Tc)
-
FDMA530PZ
POWER FIELD-EFFECT TRANSISTOR, 6
1+
$6.3380
5+
$5.9859
10+
$5.6338
Quantity
30,525 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
6-WDFN Exposed Pad
PowerTrench®
-55°C ~ 150°C (TJ)
-
6-MicroFET (2x2)
MOSFET (Metal Oxide)
-
3V @ 250µA
30 V
6.8A (Ta)
4.5V, 10V
35mOhm @ 6.8A, 10V
24 nC @ 10 V
±25V
1070 pF @ 15 V
2.4W (Ta)
-
FDS6612A-NB5E029A
30V SINGLE N-CHANNEL, LOGIC LEVE
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-SOIC (0.154", 3.90mm Width)
PowerTrench®
-55°C ~ 150°C (TJ)
-
8-SOIC
MOSFET (Metal Oxide)
-
3V @ 250µA
30 V
8.4A (Ta)
4.5V, 10V
22mOhm @ 8.4A, 10V
7.6 nC @ 5 V
±20V
560 pF @ 15 V
1W (Ta)
-
FDS6670A
SMALL SIGNAL FIELD-EFFECT TRANSI
1+
$0.3042
5+
$0.2873
10+
$0.2704
Quantity
7,859 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-SOIC (0.154", 3.90mm Width)
PowerTrench®
-55°C ~ 150°C (TJ)
-
8-SOIC
MOSFET (Metal Oxide)
-
3V @ 250µA
30 V
13A (Ta)
4.5V, 10V
8mOhm @ 13A, 10V
30 nC @ 5 V
±20V
2220 pF @ 15 V
2.5W (Ta)
-
FDME820NZT
SMALL SIGNAL FIELD-EFFECT TRANSI
1+
$0.4944
5+
$0.4669
10+
$0.4394
Quantity
25,844 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
6-PowerUFDFN
PowerTrench®
-55°C ~ 150°C (TJ)
-
MicroFet 1.6x1.6 Thin
MOSFET (Metal Oxide)
-
1V @ 250µA
20 V
9A (Ta)
1.8V, 4.5V
18mOhm @ 9A, 4.5V
8.5 nC @ 4.5 V
±12V
865 pF @ 10 V
2.1W (Ta)
-
FDD8451
POWER FIELD-EFFECT TRANSISTOR, 9
1+
$0.5070
5+
$0.4789
10+
$0.4507
Quantity
1,760 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
PowerTrench®
-55°C ~ 150°C (TJ)
-
TO-252 (DPAK)
MOSFET (Metal Oxide)
-
3V @ 250µA
40 V
9A (Ta), 28A (Tc)
4.5V, 10V
24mOhm @ 9A, 10V
20 nC @ 10 V
±20V
990 pF @ 20 V
30W (Tc)
-
FDMC8327L
POWER FIELD-EFFECT TRANSISTOR, 1
1+
$0.6338
5+
$0.5986
10+
$0.5634
Quantity
12,270 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-PowerWDFN
PowerTrench®
-55°C ~ 150°C (TJ)
-
8-MLP (3.3x3.3)
MOSFET (Metal Oxide)
-
3V @ 250µA
40 V
12A (Ta), 14A (Tc)
4.5V, 10V
9.7mOhm @ 12A, 10V
26 nC @ 10 V
±20V
1850 pF @ 20 V
2.3W (Ta), 30W (Tc)
-
FDS8817NZ-G
30V N-CHANNEL POWERTRENCH MOSFET
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-SOIC (0.154", 3.90mm Width)
PowerTrench®
-55°C ~ 150°C (TJ)
-
8-SOIC
MOSFET (Metal Oxide)
-
3V @ 250µA
30 V
15A (Ta)
4.5V, 10V
7mOhm @ 15A, 10V
45 nC @ 10 V
±20V
2400 pF @ 15 V
1W (Ta)
-
FDS6294
POWER FIELD-EFFECT TRANSISTOR, 1
1+
$0.2535
5+
$0.2394
10+
$0.2254
Quantity
5,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-SOIC (0.154", 3.90mm Width)
PowerTrench®
-55°C ~ 175°C (TJ)
-
8-SOIC
MOSFET (Metal Oxide)
-
3V @ 250µA
30 V
13A (Ta)
4.5V, 10V
11.3mOhm @ 13A, 10V
14 nC @ 5 V
±20V
1205 pF @ 15 V
3W (Ta)
-
FDD8878
POWER FIELD-EFFECT TRANSISTOR, 3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
PowerTrench®
-55°C ~ 175°C (TJ)
-
TO-252 (DPAK)
MOSFET (Metal Oxide)
-
2.5V @ 250µA
30 V
11A (Ta), 40A (Tc)
4.5V, 10V
15mOhm @ 35A, 10V
26 nC @ 10 V
±20V
880 pF @ 15 V
40W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.