PowerTrench® Series, Single FETs, MOSFETs

Results:
1,466
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Supplier Device Package
Vgs(th) (Max) @ Id
Package / Case
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
Vgs (Max)
Operating Temperature
FET Feature
Configuration
Power - Max
FET Type
Grade
Mounting Type
Qualification
Technology
Results remaining1,466
Applied Filters:
PowerTrench®
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypeSeriesPackage / CaseSupplier Device PackageDrain to Source Voltage (Vdss)GradeTechnologyFET FeatureVgs(th) (Max) @ IdCurrent - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
FDB7030BL
60A, 30V, 0.009OHM, N-CHANNEL,
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 175°C (TJ)
N-Channel
PowerTrench®
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AB
30 V
-
MOSFET (Metal Oxide)
-
3V @ 250µA
60A (Ta)
4.5V, 10V
9mOhm @ 30A, 10V
24 nC @ 5 V
±20V
1760 pF @ 15 V
60W (Tc)
-
FDB8880
11A, 30V, 0.0145OHM, N-CHANNEL,
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
PowerTrench®
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AB
30 V
-
MOSFET (Metal Oxide)
-
2.5V @ 250µA
11A (Ta), 54A (Tc)
4.5V, 10V
11.6mOhm @ 40A, 10V
29 nC @ 10 V
±20V
1240 pF @ 15 V
55W (Tc)
-
FDB9403L-F085
MOSFET N-CH 40V 110A D2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
PowerTrench®
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
40 V
Automotive
MOSFET (Metal Oxide)
-
3V @ 250µA
110A (Tc)
10V
1.2mOhm @ 80A, 10V
245 nC @ 10 V
±20V
13500 pF @ 20 V
333W (Tj)
AEC-Q101
FDD6296
MOSFET N-CH 30V 15A/50A DPAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
PowerTrench®
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252 (DPAK)
30 V
-
MOSFET (Metal Oxide)
-
3V @ 250µA
15A (Ta), 50A (Tc)
4.5V, 10V
8.8mOhm @ 15A, 10V
31.5 nC @ 10 V
±20V
1440 pF @ 15 V
3.8W (Ta), 52W (Tc)
-
FDD3706
POWER FIELD-EFFECT TRANSISTOR, 1
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
PowerTrench®
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252 (DPAK)
20 V
-
MOSFET (Metal Oxide)
-
1.5V @ 250µA
14.7A (Ta), 50A (Tc)
2.5V, 10V
9mOhm @ 16.2A, 10V
23 nC @ 4.5 V
±12V
1882 pF @ 10 V
3.8W (Ta), 44W (Tc)
-
FDD6530A
MOSFET N-CH 20V 21A TO252
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
PowerTrench®
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252 (DPAK)
20 V
-
MOSFET (Metal Oxide)
-
1.2V @ 250µA
21A (Ta)
2.5V, 4.5V
32mOhm @ 8A, 4.5V
9 nC @ 4.5 V
±8V
710 pF @ 10 V
3.3W (Ta), 33W (Tc)
-
NDS8425
SMALL SIGNAL FIELD-EFFECT TRANSI
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
PowerTrench®
8-SOIC (0.154", 3.90mm Width)
8-SOIC
20 V
-
MOSFET (Metal Oxide)
-
1.5V @ 250µA
7.4A (Ta)
2.7V, 4.5V
22mOhm @ 7.4A, 4.5V
18 nC @ 4.5 V
±8V
1098 pF @ 15 V
2.5W (Ta)
-
FDS8876-F40
30V N-CHANNEL POWERTRENCH MOSFET
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
PowerTrench®
8-SOIC (0.154", 3.90mm Width)
8-SOIC
30 V
-
MOSFET (Metal Oxide)
-
2.5V @ 250µA
12.5A (Ta)
4.5V, 10V
8.2mOhm @ 12.5A, 10V
36 nC @ 10 V
±20V
1650 pF @ 15 V
2.5W (Ta)
-
FDC604P
MOSFET P-CH 20V 5.5A SUPERSOT6
1+
$0.2789
5+
$0.2634
10+
$0.2479
Quantity
59,483 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
PowerTrench®
SOT-23-6 Thin, TSOT-23-6
SuperSOT™-6
20 V
-
MOSFET (Metal Oxide)
-
1.5V @ 250µA
5.5A (Ta)
1.8V, 4.5V
33mOhm @ 5.5A, 4.5V
30 nC @ 4.5 V
±8V
1926 pF @ 10 V
1.6W (Ta)
-
FDWS9509L-F085
MOSFET P-CH 40V 65A 8DFN
1+
$5.0704
5+
$4.7887
10+
$4.5070
Quantity
19,320 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
P-Channel
PowerTrench®
8-PowerTDFN
8-DFN (5.1x6.3)
40 V
Automotive
MOSFET (Metal Oxide)
-
3V @ 250µA
65A (Tc)
4.5V, 10V
8mOhm @ 65A, 10V
67 nC @ 10 V
±16V
3360 pF @ 20 V
107W (Tj)
AEC-Q101
FDMC6679AZ-P
MOSFET P-CH 30V 11.5A/20A 8MLP
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
PowerTrench®
8-PowerWDFN
8-WDFN (3.3x3.3)
30 V
-
MOSFET (Metal Oxide)
-
3V @ 250µA
11.5A (Ta), 20A (Tc)
4.5V, 10V
10mOhm @ 11.5A, 10V
91 nC @ 10 V
±25V
3970 pF @ 15 V
2.3W (Ta), 41W (Tc)
-
FDC655BN-G
MOSFET N-CH 30V 6.3A SUPERSOT6
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
PowerTrench®
SOT-23-6 Thin, TSOT-23-6
SuperSOT™-6
30 V
-
MOSFET (Metal Oxide)
-
3V @ 250µA
6.3A (Ta)
4.5V, 10V
25mOhm @ 6.3A, 10V
13 nC @ 10 V
±20V
620 pF @ 15 V
800mW (Tc)
-
FDME820NZT-P
MOSFET N-CH 20V 9A MICROFET
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
PowerTrench®
6-PowerUFDFN
MicroFet 1.6x1.6 Thin
20 V
-
MOSFET (Metal Oxide)
-
1V @ 250µA
9A (Ta)
1.8V, 4.5V
18mOhm @ 9A, 4.5V
8.5 nC @ 4.5 V
±12V
865 pF @ 10 V
700mW
-
FDMC7660-P
MOSFET N-CH 30V 30A/40A DLCOOL33
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
PowerTrench®
8-PowerTDFN
8-PQFN (3.3x3.3)
30 V
-
MOSFET (Metal Oxide)
-
2.5V @ 250µA
20A (Ta), 40A (Tc)
4.5V, 10V
2.2mOhm @ 20A, 10V
86 nC @ 10 V
±20V
4830 pF @ 15 V
2.3W (Ta), 41W (Tc)
-
FDS6681Z-G
MOSFET P-CH 30V 20A 8SOIC
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
PowerTrench®
8-SOIC (0.154", 3.90mm Width)
8-SOIC
30 V
-
MOSFET (Metal Oxide)
-
3V @ 250µA
20A (Ta)
4.5V, 10V
4.6mOhm @ 20A, 10V
260 nC @ 10 V
±25V
7540 pF @ 15 V
2.5W (Ta)
-
FDMC3020DC-P
MOSFET N-CH 30V 17A/40A DLCOOL33
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
PowerTrench®
8-PowerTDFN
8-PQFN (3.3x3.3)
30 V
-
MOSFET (Metal Oxide)
-
3V @ 250µA
17A (Ta), 40A (Tc)
4.5V, 10V
6.25mOhm @ 12A, 10V
23 nC @ 10 V
±20V
1385 pF @ 15 V
3W (Ta), 50W (Tc)
-
FDS4435BZ-G
MOSFET P-CH 30V 8.8A 8SOIC
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
PowerTrench®
8-SOIC (0.154", 3.90mm Width)
8-SOIC
30 V
-
MOSFET (Metal Oxide)
-
3V @ 250µA
8.8A (Ta)
4.5V, 10V
20mOhm @ 8.8A, 10V
40 nC @ 10 V
±25V
1845 pF @ 15 V
1W (Ta)
-
FDS8878-G
MOSFET N-CH 30V 10.2A 8SOIC
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
PowerTrench®
8-SOIC (0.154", 3.90mm Width)
8-SOIC
30 V
-
MOSFET (Metal Oxide)
-
2.5V @ 250µA
10.2A (Ta)
4.5V, 10V
14mOhm @ 10.2A, 10V
26 nC @ 10 V
±20V
897 pF @ 15 V
2.5W (Ta)
-
STLJFS014N04M8L
MOSFET N-CHANNEL
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
PowerTrench®
6-WDFN Exposed Pad
6-WDFN (2x2)
40 V
-
MOSFET (Metal Oxide)
-
3V @ 250µA
10A (Ta)
4.5V, 10V
14mOhm @ 10A, 10V
20 nC @ 10 V
±20V
1260 pF @ 20 V
2.4W (Ta)
-
FDG312P
MOSFET P-CH 20V 1.2A SC88
1+
$0.2535
5+
$0.2394
10+
$0.2254
Quantity
2,720 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
PowerTrench®
6-TSSOP, SC-88, SOT-363
SC-88 (SC-70-6)
20 V
-
MOSFET (Metal Oxide)
-
1.5V @ 250µA
1.2A (Ta)
2.5V, 4.5V
180mOhm @ 1.2A, 4.5V
5 nC @ 4.5 V
±8V
330 pF @ 10 V
750mW (Ta)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.