PowerTrench® Series, Single FETs, MOSFETs

Results:
1,466
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Supplier Device Package
Vgs(th) (Max) @ Id
Package / Case
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
Vgs (Max)
Operating Temperature
FET Feature
Configuration
Power - Max
FET Type
Grade
Mounting Type
Qualification
Technology
Results remaining1,466
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperaturePackage / CaseFET TypeSeriesSupplier Device PackageDrain to Source Voltage (Vdss)GradeTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
FDG311N
MOSFET N-CH 20V 1.9A SC88
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
6-TSSOP, SC-88, SOT-363
N-Channel
PowerTrench®
SC-88 (SC-70-6)
20 V
-
MOSFET (Metal Oxide)
-
1.9A (Ta)
1.5V @ 250µA
2.5V, 4.5V
115mOhm @ 1.9A, 4.5V
4.5 nC @ 4.5 V
±8V
270 pF @ 10 V
750mW (Ta)
-
FDG312P
MOSFET P-CH 20V 1.2A SC88
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
6-TSSOP, SC-88, SOT-363
P-Channel
PowerTrench®
SC-88 (SC-70-6)
20 V
-
MOSFET (Metal Oxide)
-
1.2A (Ta)
1.5V @ 250µA
2.5V, 4.5V
180mOhm @ 1.2A, 4.5V
5 nC @ 4.5 V
±8V
330 pF @ 10 V
750mW (Ta)
-
FDG315N
2A, 30V, N-CHANNEL, MOSFET
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
6-TSSOP, SC-88, SOT-363
N-Channel
PowerTrench®
SC-88 (SC-70-6)
30 V
-
MOSFET (Metal Oxide)
-
2A (Ta)
3V @ 250µA
4.5V, 10V
120mOhm @ 2A, 10V
4 nC @ 5 V
±20V
220 pF @ 15 V
750mW (Ta)
-
FDG330P
MOSFET P-CH 12V 2A SC88
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
6-TSSOP, SC-88, SOT-363
P-Channel
PowerTrench®
SC-88 (SC-70-6)
12 V
-
MOSFET (Metal Oxide)
-
2A (Ta)
1.5V @ 250µA
1.8V, 4.5V
110mOhm @ 2A, 4.5V
7 nC @ 4.5 V
±8V
477 pF @ 6 V
750mW (Ta)
-
FDG316P
SMALL SIGNAL FIELD-EFFECT TRANSI
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
6-TSSOP, SC-88, SOT-363
P-Channel
PowerTrench®
SC-88 (SC-70-6)
30 V
-
MOSFET (Metal Oxide)
-
1.6A (Ta)
3V @ 250µA
4.5V, 10V
190mOhm @ 1.6A, 10V
5 nC @ 10 V
±20V
165 pF @ 15 V
750mW (Ta)
-
FDI045N10A
MOSFET N-CH 100V 120A I2PAK-3
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
TO-262-3 Long Leads, I²Pak, TO-262AA
N-Channel
PowerTrench®
I2PAK (TO-262)
100 V
-
MOSFET (Metal Oxide)
-
120A (Tc)
4V @ 250µA
10V
4.5mOhm @ 100A, 10V
74 nC @ 10 V
±20V
5270 pF @ 50 V
263W (Tc)
-
FDG330P
MOSFET P-CH 12V 2A SC88
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
6-TSSOP, SC-88, SOT-363
P-Channel
PowerTrench®
SC-88 (SC-70-6)
12 V
-
MOSFET (Metal Oxide)
-
2A (Ta)
1.5V @ 250µA
-
110mOhm @ 2A, 4.5V
7 nC @ 4.5 V
±8V
477 pF @ 6 V
480mW (Ta)
-
FDI9406-F085
FDI9406 - N-CHANNEL POWERTRENCH
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
TO-262-3 Long Leads, I²Pak, TO-262AA
N-Channel
PowerTrench®
I2PAK (TO-262)
40 V
Automotive
MOSFET (Metal Oxide)
-
110A (Tc)
4V @ 250µA
10V
2.2mOhm @ 80A, 10V
138 nC @ 10 V
±20V
7710 pF @ 25 V
176W (Tj)
AEC-Q101
FDMA0104
TRANS MOSFET N-CH 20V 9.4A 6PIN
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
6-WDFN Exposed Pad
N-Channel
PowerTrench®
6-MicroFET (2x2)
20 V
-
MOSFET (Metal Oxide)
-
9.4A (Ta)
1V @ 250µA
-
14.5mOhm @ 9.4A, 4.5V
17.5 nC @ 4.5 V
-
1680 pF @ 10 V
1.9W (Ta)
-
FDMA7628
FDMA7628 - SINGLE N-CHANNEL 1.5
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
6-WDFN Exposed Pad
N-Channel
PowerTrench®
6-MicroFET (2x2)
20 V
-
MOSFET (Metal Oxide)
-
9.4A (Ta)
1V @ 250µA
1.5V, 4.5V
14.5mOhm @ 9.4A, 4.5V
17.5 nC @ 4.5 V
±8V
1680 pF @ 10 V
1.9W (Ta)
-
FDMA7628
MOSFET N-CH 20V 9.4A 6MICROFET
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
6-WDFN Exposed Pad
N-Channel
PowerTrench®
6-MicroFET (2x2)
20 V
-
MOSFET (Metal Oxide)
-
9.4A (Ta)
1V @ 250µA
1.5V, 4.5V
14.5mOhm @ 9.4A, 4.5V
17.5 nC @ 4.5 V
±8V
1680 pF @ 10 V
1.9W (Ta)
-
FDME430NT
MOSFET N-CH 30V 6A MICROFET
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
6-PowerUFDFN
N-Channel
PowerTrench®
MicroFet 1.6x1.6 Thin
30 V
-
MOSFET (Metal Oxide)
-
6A (Ta)
1.5V @ 250µA
-
40mOhm @ 6A, 4.5V
9 nC @ 4.5 V
±12V
760 pF @ 15 V
700mW (Ta)
-
FDMS5361L-F085
FDMS5361 - N-CHANNEL POWERTRENCH
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
8-PowerVDFN
N-Channel
PowerTrench®
Power56
60 V
Automotive
MOSFET (Metal Oxide)
-
35A (Tc)
3V @ 250µA
4.5V, 10V
15mOhm @ 16.5A, 10V
44 nC @ 10 V
±20V
1980 pF @ 25 V
75W (Tc)
AEC-Q101
FDPF041N06BL1
MOSFET N-CH 60V 77A TO220F
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
TO-220-3 Full Pack
N-Channel
PowerTrench®
TO-220F-3
60 V
-
MOSFET (Metal Oxide)
-
77A (Tc)
4V @ 250µA
10V
4.1mOhm @ 77A, 10V
69 nC @ 10 V
±20V
5690 pF @ 30 V
44.1W (Tc)
-
FDS4488
0.0079A, 30V, N-CHANNEL MOSFET
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
8-SOIC (0.154", 3.90mm Width)
N-Channel
PowerTrench®
8-SOIC
30 V
-
MOSFET (Metal Oxide)
-
7.9A (Ta)
3V @ 250µA
4.5V, 10V
22mOhm @ 7.9A, 10V
13 nC @ 5 V
±25V
927 pF @ 15 V
1W (Ta)
-
FDS8876
MOSFET N-CH 30V 12.5A 8SOIC
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-SOIC (0.154", 3.90mm Width)
N-Channel
PowerTrench®
8-SOIC
30 V
-
MOSFET (Metal Oxide)
-
12.5A (Ta)
2.5V @ 250µA
4.5V, 10V
8.2mOhm @ 12.5A, 10V
36 nC @ 10 V
±20V
1650 pF @ 15 V
2.5W (Ta)
-
FDS9400A
MOSFET P-CH 30V 3.4A 8SOIC
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
8-SOIC (0.154", 3.90mm Width)
P-Channel
PowerTrench®
8-SOIC
30 V
-
MOSFET (Metal Oxide)
-
3.4A (Ta)
3V @ 250µA
4.5V, 10V
130mOhm @ 1A, 10V
3.5 nC @ 5 V
±25V
205 pF @ 15 V
2.5W (Ta)
-
FDZ663P
FDZ663P - FDZ663P - MOSFET P-CHA
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
4-XFBGA, WLCSP
P-Channel
PowerTrench®
4-WLCSP (0.8x0.8)
20 V
-
MOSFET (Metal Oxide)
-
2.7A (Ta)
1.2V @ 250µA
1.5V, 4.5V
134mOhm @ 2A, 4.5V
8.2 nC @ 4.5 V
±8V
525 pF @ 10 V
1.3W (Ta)
-
FDB8870
MOSFET N-CH 30V 23A/160A TO263AB
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
N-Channel
PowerTrench®
TO-263 (D2Pak)
30 V
-
MOSFET (Metal Oxide)
-
23A (Ta), 160A (Tc)
2.5V @ 250µA
4.5V, 10V
3.9mOhm @ 35A, 10V
132 nC @ 10 V
±20V
5200 pF @ 15 V
160W (Tc)
-
FDB8870-F085
MOSFET N-CH 30V 23A/160A D2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
N-Channel
PowerTrench®
TO-263 (D2Pak)
30 V
Automotive
MOSFET (Metal Oxide)
-
23A (Ta), 160A (Tc)
2.5V @ 250µA
-
3.9mOhm @ 35A, 10V
132 nC @ 10 V
±20V
5200 pF @ 15 V
160W (Tc)
AEC-Q101

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.