PowerTrench® Series, Single FETs, MOSFETs

Results:
1,466
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Supplier Device Package
Vgs(th) (Max) @ Id
Package / Case
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
Vgs (Max)
Operating Temperature
FET Feature
Configuration
Power - Max
FET Type
Grade
Mounting Type
Qualification
Technology
Results remaining1,466
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypeSeriesDrain to Source Voltage (Vdss)GradePackage / CaseSupplier Device PackageTechnologyFET FeatureVgs(th) (Max) @ IdCurrent - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
FDMC6296
MOSFET N-CH 30V 11.5A 8MLP
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
PowerTrench®
30 V
-
8-PowerWDFN
8-MLP (3.3x3.3)
MOSFET (Metal Oxide)
-
3V @ 250µA
11.5A (Ta)
4.5V, 10V
10.5mOhm @ 11.5A, 10V
19 nC @ 5 V
±20V
2141 pF @ 15 V
900mW (Ta), 2.1W (Tc)
-
FDU068AN03L
MOSFET N-CH 30V 17A/35A IPAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
N-Channel
PowerTrench®
30 V
-
TO-251-3 Short Leads, IPak, TO-251AA
I-PAK
MOSFET (Metal Oxide)
-
2.5V @ 250µA
17A (Ta), 35A (Tc)
4.5V, 10V
5.7mOhm @ 35A, 10V
60 nC @ 10 V
±20V
2525 pF @ 15 V
80W (Tc)
-
FDS6688AS
MOSFET N-CH 30V 14.5A 8SOIC
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
PowerTrench®
30 V
-
8-SOIC (0.154", 3.90mm Width)
8-SOIC
MOSFET (Metal Oxide)
-
3V @ 250µA
14.5A (Ta)
4.5V, 10V
6mOhm @ 14.5A, 10V
63 nC @ 10 V
±20V
2510 pF @ 15 V
2.5W (Ta)
-
FDG330P
SMALL SIGNAL FIELD-EFFECT TRANSI
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
PowerTrench®
12 V
-
6-TSSOP, SC-88, SOT-363
SC-88 (SC-70-6)
MOSFET (Metal Oxide)
-
1.5V @ 250µA
2A (Ta)
-
110mOhm @ 2A, 4.5V
7 nC @ 4.5 V
±8V
477 pF @ 6 V
480mW (Ta)
-
FDD6776A
MOSFET N-CH 25V 17.7A/30A DPAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
PowerTrench®
25 V
-
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252 (DPAK)
MOSFET (Metal Oxide)
-
3V @ 250µA
17.7A (Ta), 30A (Tc)
4.5V, 10V
7.5mOhm @ 17.7A, 10V
29 nC @ 10 V
±20V
1490 pF @ 13 V
3.7W (Ta), 39W (Tc)
-
FDD8750
MOSFET N-CH 25V 6.5A/2.7A DPAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
PowerTrench®
25 V
-
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252 (DPAK)
MOSFET (Metal Oxide)
-
2.5V @ 250µA
6.5A (Ta), 2.7A (Tc)
4.5V, 10V
40mOhm @ 2.7A, 10V
9 nC @ 10 V
±20V
425 pF @ 13 V
3.7W (Ta), 18W (Tc)
-
FDU8778
MOSFET N-CH 25V 35A IPAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
N-Channel
PowerTrench®
25 V
-
TO-251-3 Short Leads, IPak, TO-251AA
I-PAK
MOSFET (Metal Oxide)
-
2.5V @ 250µA
35A (Tc)
4.5V, 10V
14mOhm @ 35A, 10V
18 nC @ 10 V
±20V
845 pF @ 13 V
39W (Tc)
-
FDB8876
MOSFET N-CH 30V 71A TO263AB
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
PowerTrench®
30 V
-
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
MOSFET (Metal Oxide)
-
2.5V @ 250µA
71A (Tc)
4.5V, 10V
8.5mOhm @ 40A, 10V
45 nC @ 10 V
±20V
1700 pF @ 15 V
70W (Tc)
-
FDC699P
MOSFET P-CH 20V 7A SUPERSOT6
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
PowerTrench®
20 V
-
6-SSOT Flat-lead, SuperSOT™-6 FLMP
SuperSOT™-6 FLMP
MOSFET (Metal Oxide)
-
1.5V @ 250µA
7A (Ta)
2.5V, 4.5V
22mOhm @ 7A, 4.5V
38 nC @ 5 V
±12V
2640 pF @ 10 V
2W (Ta)
-
FDU6688
MOSFET N-CH 30V 84A IPAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
N-Channel
PowerTrench®
30 V
-
TO-251-3 Short Leads, IPak, TO-251AA
I-PAK
MOSFET (Metal Oxide)
-
3V @ 250µA
84A (Ta)
4.5V, 10V
5mOhm @ 18A, 10V
56 nC @ 5 V
±20V
3845 pF @ 15 V
83W (Ta)
-
FDZ208P
MOSFET P-CH 30V 12.5A 30BGA
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
PowerTrench®
30 V
-
30-WFBGA
30-BGA (4x3.5)
MOSFET (Metal Oxide)
-
3V @ 250µA
12.5A (Ta)
4.5V, 10V
10.5mOhm @ 12.5A, 10V
35 nC @ 5 V
±25V
2409 pF @ 15 V
2.2W (Ta)
-
FDU8770
MOSFET N-CH 25V 35A IPAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
N-Channel
PowerTrench®
25 V
-
TO-251-3 Short Leads, IPak, TO-251AA
I-PAK
MOSFET (Metal Oxide)
-
2.5V @ 250µA
35A (Tc)
4.5V, 10V
4mOhm @ 35A, 10V
73 nC @ 10 V
±20V
3720 pF @ 13 V
115W (Tc)
-
FDI8441
MOSFET N-CH 40V 26A/80A I2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
N-Channel
PowerTrench®
40 V
-
TO-262-3 Long Leads, I²Pak, TO-262AA
TO-262 (I2PAK)
MOSFET (Metal Oxide)
-
4V @ 250µA
26A (Ta), 80A (Tc)
10V
2.7mOhm @ 80A, 10V
280 nC @ 10 V
±20V
15000 pF @ 25 V
300W (Tc)
-
FDD6612A
POWER FIELD-EFFECT TRANSISTOR, 9
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
PowerTrench®
30 V
-
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252 (DPAK)
MOSFET (Metal Oxide)
-
3V @ 250µA
9.5A (Ta), 30A (Tc)
4.5V, 10V
20mOhm @ 9.5A, 10V
9.4 nC @ 5 V
±20V
660 pF @ 15 V
2.8W (Ta), 36W (Tc)
-
FDD6688
MOSFET N-CH 30V 84A DPAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
PowerTrench®
30 V
-
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252 (DPAK)
MOSFET (Metal Oxide)
-
3V @ 250µA
84A (Ta)
4.5V, 10V
5mOhm @ 18A, 10V
56 nC @ 10 V
±20V
3845 pF @ 15 V
83W (Ta)
-
FDD8896-F085
MOSFET N-CH 30V 17A/94A TO252AA
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
PowerTrench®
30 V
Automotive
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252 (DPAK)
MOSFET (Metal Oxide)
-
2.5V @ 250µA
17A (Ta), 94A (Tc)
4.5V, 10V
5.7mOhm @ 35A, 10V
60 nC @ 10 V
±20V
2525 pF @ 15 V
80W (Tc)
AEC-Q101
FDD8874
POWER FIELD-EFFECT TRANSISTOR, 3
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
PowerTrench®
30 V
-
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252 (DPAK)
MOSFET (Metal Oxide)
-
2.5V @ 250µA
18A (Ta), 116A (Tc)
4.5V, 10V
5.1mOhm @ 35A, 10V
72 nC @ 10 V
±20V
2990 pF @ 15 V
110W (Tc)
-
FDFM2P110
MOSFET P-CH 20V 3.5A MICROFET
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
PowerTrench®
20 V
-
6-WDFN Exposed Pad
MicroFET 3x3mm
MOSFET (Metal Oxide)
Schottky Diode (Isolated)
1.5V @ 250µA
3.5A (Ta)
2.5V, 4.5V
140mOhm @ 3.5A, 4.5V
4 nC @ 4.5 V
±12V
280 pF @ 10 V
2W (Ta)
-
FDFMA2P853T
MOSFET P-CH 20V 3A MICROFET
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
PowerTrench®
20 V
-
6-VDFN Exposed Pad
6-MicroFET (2x2)
MOSFET (Metal Oxide)
Schottky Diode (Isolated)
1.3V @ 250µA
3A (Ta)
1.8V, 4.5V
120mOhm @ 3A, 4.5V
6 nC @ 4.5 V
±8V
435 pF @ 10 V
1.4W (Ta)
-
FDFME2P823ZT
2.6A, 20V, P-CHANNEL MOSFET
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
PowerTrench®
20 V
-
6-UFDFN Exposed Pad
6-MicroFET (1.6x1.6)
MOSFET (Metal Oxide)
Schottky Diode (Isolated)
1V @ 250µA
2.6A (Ta)
1.8V, 4.5V
142mOhm @ 2.3A, 4.5V
7.7 nC @ 4.5 V
±8V
405 pF @ 10 V
1.4W (Ta)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.