PowerTrench® Series, Single FETs, MOSFETs

Results:
1,466
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Supplier Device Package
Vgs(th) (Max) @ Id
Package / Case
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
Vgs (Max)
Operating Temperature
FET Feature
Configuration
Power - Max
FET Type
Grade
Mounting Type
Qualification
Technology
Results remaining1,466
Applied Filters:
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperaturePackage / CaseFET TypeSeriesDrain to Source Voltage (Vdss)GradeSupplier Device PackageTechnologyCurrent - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsVgs(th) (Max) @ IdDrive Voltage (Max Rds On, Min Rds On)Gate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsFET FeaturePower Dissipation (Max)Qualification
FDFMA3P029Z
MOSFET P-CH 30V 3.3A 6MICROFET
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
6-WDFN Exposed Pad
P-Channel
PowerTrench®
30 V
-
6-MLP (2x2)
MOSFET (Metal Oxide)
3.3A (Ta)
87mOhm @ 3.3A, 10V
3V @ 250µA
-
10 nC @ 10 V
-
435 pF @ 15 V
Schottky Diode (Isolated)
1.4W (Ta)
-
FDU6676AS
MOSFET N-CH 30V 90A IPAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-251-3 Short Leads, IPak, TO-251AA
N-Channel
PowerTrench®
30 V
-
I-PAK
MOSFET (Metal Oxide)
90A (Ta)
5.8mOhm @ 16A, 10V
3V @ 250µA
4.5V, 10V
64 nC @ 10 V
±20V
2470 pF @ 15 V
-
70W (Ta)
-
FDMA7628
FDMA7628 - SINGLE N-CHANNEL 1.5
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
6-WDFN Exposed Pad
N-Channel
PowerTrench®
20 V
-
6-MicroFET (2x2)
MOSFET (Metal Oxide)
9.4A (Ta)
14.5mOhm @ 9.4A, 4.5V
1V @ 250µA
1.5V, 4.5V
17.5 nC @ 4.5 V
±8V
1680 pF @ 10 V
-
1.9W (Ta)
-
FDU8878
MOSFET N-CH 30V 11A/40A IPAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
TO-251-3 Short Leads, IPak, TO-251AA
N-Channel
PowerTrench®
30 V
-
I-PAK
MOSFET (Metal Oxide)
11A (Ta), 40A (Tc)
15mOhm @ 35A, 10V
2.5V @ 250µA
4.5V, 10V
26 nC @ 10 V
±20V
880 pF @ 15 V
-
40W (Tc)
-
FDFMJ2P023Z
MOSFET P-CH 20V 2.9A SC75 MICROF
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
6-WFDFN Exposed Pad
P-Channel
PowerTrench®
20 V
-
SC-75, MicroFET
MOSFET (Metal Oxide)
2.9A (Ta)
112mOhm @ 2.9A, 4.5V
1V @ 250µA
1.5V, 4.5V
6.5 nC @ 4.5 V
±8V
400 pF @ 10 V
Schottky Diode (Isolated)
1.4W (Ta)
-
FDU6612A
MOSFET N-CH 30V 9.5A/30A IPAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
TO-251-3 Short Leads, IPak, TO-251AA
N-Channel
PowerTrench®
30 V
-
I-PAK
MOSFET (Metal Oxide)
9.5A (Ta), 30A (Tc)
20mOhm @ 9.5A, 10V
3V @ 250µA
4.5V, 10V
9.4 nC @ 5 V
±20V
660 pF @ 15 V
-
2.8W (Ta), 36W (Tc)
-
FDFC2P100
MOSFET P-CH 20V 3A SUPERSOT6
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
SOT-23-6 Thin, TSOT-23-6
P-Channel
PowerTrench®
20 V
-
SuperSOT™-6
MOSFET (Metal Oxide)
3A (Ta)
150mOhm @ 3A, 4.5V
1.5V @ 250µA
2.5V, 4.5V
4.7 nC @ 10 V
±12V
445 pF @ 10 V
Schottky Diode (Isolated)
1.5W (Ta)
-
FDMS0346
POWER FIELD-EFFECT TRANSISTOR
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-PowerVDFN
N-Channel
PowerTrench®
25 V
-
Power56
MOSFET (Metal Oxide)
17A (Ta), 28A (Tc)
5.8mOhm @ 17A, 10V
3V @ 250µA
4.5V, 10V
25 nC @ 10 V
±20V
1625 pF @ 13 V
-
2.5W (Ta), 33W (Tc)
-
FDMS0348
POWER FIELD-EFFECT TRANSISTOR
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-PowerWDFN
N-Channel
PowerTrench®
30 V
-
8-MLP (5x6)
MOSFET (Metal Oxide)
14A (Ta), 35A (Tc)
7mOhm @ 14A, 10V
3V @ 250µA
4.5V, 10V
26 nC @ 10 V
±20V
1590 pF @ 15 V
-
2.5W (Ta), 50W (Tc)
-
FDZ7296
MOSFET N-CH 30V 11A 18BGA
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
18-WFBGA
N-Channel
PowerTrench®
30 V
-
18-BGA (2.5x4)
MOSFET (Metal Oxide)
11A (Ta)
8.5mOhm @ 11A, 10V
3V @ 250µA
4.5V, 10V
31 nC @ 10 V
±20V
1520 pF @ 15 V
-
2.1W (Ta)
-
FDU8586
MOSFET N-CH 20V 35A IPAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
TO-251-3 Short Leads, IPak, TO-251AA
N-Channel
PowerTrench®
20 V
-
I-PAK
MOSFET (Metal Oxide)
35A (Tc)
5.5mOhm @ 35A, 10V
2.5V @ 250µA
4.5V, 10V
48 nC @ 10 V
±20V
2480 pF @ 10 V
-
77W (Tc)
-
FDZ209N
MOSFET N-CH 60V 4A 12BGA
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
12-WFBGA
N-Channel
PowerTrench®
60 V
-
12-BGA (2x2.5)
MOSFET (Metal Oxide)
4A (Ta)
80mOhm @ 4A, 5V
3V @ 250µA
5V
9 nC @ 5 V
±20V
657 pF @ 30 V
-
2W (Ta)
-
FDU3580
MOSFET N-CH 80V 7.7A IPAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
TO-251-3 Short Leads, IPak, TO-251AA
N-Channel
PowerTrench®
80 V
-
I-PAK
MOSFET (Metal Oxide)
7.7A (Ta)
29mOhm @ 7.7A, 10V
4V @ 250µA
6V, 10V
79 nC @ 10 V
±20V
1760 pF @ 40 V
-
3.8W (Ta), 42W (Tc)
-
FDZ7064AS
MOSFET N-CH 30V 13.5A 30BGA
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
30-WFBGA
N-Channel
PowerTrench®
30 V
-
30-BGA (4x3.5)
MOSFET (Metal Oxide)
13.5A (Ta)
5.6mOhm @ 13.5A, 10V
3V @ 1mA
4.5V, 10V
51 nC @ 10 V
±20V
1960 pF @ 15 V
-
2.2W (Ta)
-
FDU8870
MOSFET N-CH 30V 21A/160A IPAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
TO-251-3 Short Leads, IPak, TO-251AA
N-Channel
PowerTrench®
30 V
-
I-PAK
MOSFET (Metal Oxide)
21A (Ta), 160A (Tc)
3.9mOhm @ 35A, 10V
2.5V @ 250µA
4.5V, 10V
118 nC @ 10 V
±20V
5160 pF @ 15 V
-
160W (Tc)
-
FDU044AN03L
MOSFET N-CH 30V 21A/35A IPAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
TO-251-3 Short Leads, IPak, TO-251AA
N-Channel
PowerTrench®
30 V
-
I-PAK
MOSFET (Metal Oxide)
21A (Ta), 35A (Tc)
3.9mOhm @ 35A, 10V
2.5V @ 250µA
4.5V, 10V
118 nC @ 10 V
±20V
5160 pF @ 15 V
-
160W (Tc)
-
FDU6296
MOSFET N-CH 30V 15A/50A IPAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
TO-251-3 Short Leads, IPak, TO-251AA
N-Channel
PowerTrench®
30 V
-
I-PAK
MOSFET (Metal Oxide)
15A (Ta), 50A (Tc)
8.8mOhm @ 15A, 10V
3V @ 250µA
4.5V, 10V
31.5 nC @ 10 V
±20V
1440 pF @ 15 V
-
3.8W (Ta), 52W (Tc)
-
FDU6030BL
MOSFET N-CH 30V 10A/42A IPAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
TO-251-3 Short Leads, IPak, TO-251AA
N-Channel
PowerTrench®
30 V
-
I-PAK
MOSFET (Metal Oxide)
10A (Ta), 42A (Tc)
16mOhm @ 10A, 10V
3V @ 250µA
4.5V, 10V
31 nC @ 10 V
±20V
1143 pF @ 15 V
-
3.8W (Ta), 50W (Tc)
-
FDU7030BL
MOSFET N-CH 30V 14A/56A IPAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
TO-251-3 Short Leads, IPak, TO-251AA
N-Channel
PowerTrench®
30 V
-
I-PAK
MOSFET (Metal Oxide)
14A (Ta), 56A (Tc)
9.5mOhm @ 14A, 10V
3V @ 250µA
4.5V, 10V
20 nC @ 5 V
±20V
1425 pF @ 15 V
-
2.8W (Ta), 60W (Tc)
-
FDU6680
MOSFET N-CH 30V 12A/46A IPAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
TO-251-3 Short Leads, IPak, TO-251AA
N-Channel
PowerTrench®
30 V
-
I-PAK
MOSFET (Metal Oxide)
12A (Ta), 46A (Tc)
10mOhm @ 12A, 10V
3V @ 250µA
4.5V, 10V
18 nC @ 5 V
±20V
1230 pF @ 15 V
-
3.3W (Ta), 56W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.