PowerTrench® Series, Single FETs, MOSFETs

Results:
1,463
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Supplier Device Package
Vgs(th) (Max) @ Id
Package / Case
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
Vgs (Max)
Operating Temperature
FET Feature
Configuration
Power - Max
FET Type
Grade
Mounting Type
Qualification
Technology
Results remaining1,463
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypeSeriesDrain to Source Voltage (Vdss)Package / CaseSupplier Device PackageTechnologyFET FeatureVgs(th) (Max) @ IdCurrent - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)
FDMC7692S-F127
MOSFET N-CH 30V 12.5A/18A 8MLP
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
PowerTrench®
30 V
8-PowerWDFN
8-MLP (3.3x3.3)
MOSFET (Metal Oxide)
-
3V @ 1mA
12.5A (Ta), 18A (Tc)
4.5V, 10V
9.3mOhm @ 12.5A, 10V
23 nC @ 10 V
±20V
1385 pF @ 15 V
2.3W (Ta), 27W (Tc)
FDMT800100DC-22897
FET 100V 2.95 MOHM PQFN88
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
PowerTrench®
100 V
8-PowerVDFN
8-Dual Cool™88
MOSFET (Metal Oxide)
-
4V @ 250µA
24A (Ta), 162A (Tc)
6V, 10V
2.95mOhm @ 24A, 10V
111 nC @ 10 V
±20V
7835 pF @ 50 V
3.2W (Ta), 156W (Tc)
FDMC7692_F126
MOSFET N-CH 30V 13.3A/16A 8MLP
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
PowerTrench®
30 V
8-PowerWDFN
8-MLP (3.3x3.3)
MOSFET (Metal Oxide)
-
3V @ 250µA
13.3A (Ta), 16A (Tc)
4.5V, 10V
8.5mOhm @ 13.3A, 10V
29 nC @ 10 V
±20V
1680 pF @ 15 V
2.3W (Ta), 29W (Tc)
FDMS7694_SN00176
MOSFET N-CH 30V 13.2A/20A 8PQFN
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
PowerTrench®
30 V
8-PowerTDFN
8-PQFN (5x6)
MOSFET (Metal Oxide)
-
3V @ 250µA
13.2A (Ta), 20A (Tc)
4.5V, 10V
9.5mOhm @ 13.2A, 10V
22 nC @ 10 V
±20V
1410 pF @ 15 V
2.5W (Ta), 27W (Tc)
FDS8870_G
MOSFET N-CH 30V 18A 8SOIC
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
PowerTrench®
30 V
8-SOIC (0.154", 3.90mm Width)
8-SOIC
MOSFET (Metal Oxide)
-
2.5V @ 250µA
18A (Ta)
4.5V, 10V
4.2mOhm @ 18A, 10V
112 nC @ 10 V
±20V
4615 pF @ 15 V
2.5W (Ta)
FDB8132
MOSFET N-CH 30V 80A D2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
PowerTrench®
30 V
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
D2PAK (TO-263)
MOSFET (Metal Oxide)
-
4V @ 250µA
80A (Tc)
10V
1.6mOhm @ 80A, 10V
350 nC @ 13 V
±20V
14100 pF @ 15 V
341W (Tc)
FDG6335N
N-CHANNEL POWERTRENCH MOSFET, 20
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¥1.7746
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¥1.6761
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¥1.5775
Quantity
146,424 Available
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
PowerTrench®
20V
6-TSSOP, SC-88, SOT-363
SC-88 (SC-70-6)
MOSFET (Metal Oxide)
Logic Level Gate
1.5V @ 250µA
700mA
300mOhm @ 700mA, 4.5V
1.4nC @ 4.5V
113pF @ 10V
FDS8960C
DUAL N & P-CHANNEL POWERTRENCH M
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
PowerTrench®
35V
8-SOIC (0.154", 3.90mm Width)
8-SOIC
MOSFET (Metal Oxide)
Logic Level Gate
3V @ 250µA
7A, 5A
24mOhm @ 7A, 10V
7.7nC @ 5V
570pF @ 15V
FDMA3027PZ-F130
SMALL SIGNAL N-CHANNEL MOSFET
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
PowerTrench®
-
6-VDFN Exposed Pad
6-MicroFET (2x2)
-
-
-
-
-
-
-
FDMC8678S
MOSFET N-CH 30V 15A/18A POWER33
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
PowerTrench®
30 V
8-PowerTDFN
Power33
MOSFET (Metal Oxide)
-
3V @ 1mA
15A (Ta), 18A (Tc)
4.5V, 10V
5.2mOhm @ 15A, 10V
34 nC @ 10 V
±20V
2075 pF @ 15 V
2.3W (Ta), 41W (Tc)
FDFS2P753Z
MOSFET P-CH 30V 3A 8SOIC
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
PowerTrench®
30 V
8-SOIC (0.154", 3.90mm Width)
8-SOIC
MOSFET (Metal Oxide)
Schottky Diode (Isolated)
3V @ 250µA
3A (Ta)
4.5V, 10V
115mOhm @ 3A, 10V
9.3 nC @ 10 V
±25V
455 pF @ 10 V
1.6W (Ta)
FDMC8676
MOSFET N-CH 30V 16A/18A POWER33
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
PowerTrench®
30 V
8-PowerTDFN
Power33
MOSFET (Metal Oxide)
-
3V @ 250µA
16A (Ta), 18A (Tc)
4.5V, 10V
5.9mOhm @ 14.7A, 10V
30 nC @ 10 V
±20V
1935 pF @ 15 V
2.3W (Ta), 41W (Tc)
FDZ197PZ
MOSFET P-CH 20V 3.8A 6WLCSP
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
PowerTrench®
20 V
6-UFBGA, WLCSP
6-WLCSP (1x1.5)
MOSFET (Metal Oxide)
-
1V @ 250µA
3.8A (Ta)
1.5V, 4.5V
64mOhm @ 2A, 4.5V
25 nC @ 4.5 V
±8V
1570 pF @ 10 V
1.9W (Ta)
FDFME3N311ZT
MOSFET N-CH 30V 1.8A 6MICROFET
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
PowerTrench®
30 V
6-UFDFN Exposed Pad
6-MicroFET (1.6x1.6)
MOSFET (Metal Oxide)
Schottky Diode (Isolated)
1.5V @ 250µA
1.8A (Ta)
2.5V, 4.5V
299mOhm @ 1.6A, 4.5V
1.4 nC @ 4.5 V
±12V
75 pF @ 15 V
1.4W (Ta)
FDD4243-G
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
PowerTrench®
40 V
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
MOSFET (Metal Oxide)
-
3V @ 250µA
6.7A (Ta), 14A (Tc)
4.5V, 10V
44mOhm @ 6.7A, 10V
29 nC @ 10 V
±20V
1550 pF @ 20 V
42W (Tc)
FDS8817NZ-G
MOSFET N-CH 30V 15A 8SOIC
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
PowerTrench®
30 V
8-SOIC (0.154", 3.90mm Width)
8-SOIC
MOSFET (Metal Oxide)
-
3V @ 250µA
15A (Ta)
4.5V, 10V
7mOhm @ 15A, 10V
45 nC @ 10 V
±20V
2400 pF @ 15 V
1W (Ta)
FDD8880-G
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
PowerTrench®
30 V
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
MOSFET (Metal Oxide)
-
2.5V @ 250µA
13A (Ta), 58A (Tc)
4.5V, 10V
9mOhm @ 35A, 10V
31 nC @ 10 V
±20V
1260 pF @ 15 V
55W (Tc)
FDMS7681
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
PowerTrench®
30 V
8-PowerTDFN
8-PQFN (5x6)
MOSFET (Metal Oxide)
-
3V @ 250µA
14A (Ta), 28A (Tc)
4.5V, 10V
6.9mOhm @ 14A, 10V
28 nC @ 10 V
±20V
1850 pF @ 15 V
2.5W (Ta), 33W (Tc)
FDS8878-F123
MOSFET N-CH 30V 10.2A 8SOIC
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
PowerTrench®
30 V
8-SOIC (0.154", 3.90mm Width)
8-SOIC
MOSFET (Metal Oxide)
-
2.5V @ 250µA
10.2A (Ta)
4.5V, 10V
14mOhm @ 10.2A, 10V
26 nC @ 10 V
±20V
897 pF @ 15 V
2.5W (Ta)
FDFMA3P029Z
MOSFET P-CH 30V 3.3A 6MICROFET
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
PowerTrench®
30 V
6-WDFN Exposed Pad
6-MLP (2x2)
MOSFET (Metal Oxide)
Schottky Diode (Isolated)
3V @ 250µA
3.3A (Ta)
-
87mOhm @ 3.3A, 10V
10 nC @ 10 V
-
435 pF @ 15 V
1.4W (Ta)

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.