U-MOSVIII-H Series, Single FETs, MOSFETs

Results:
140
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Power Dissipation (Max)
Gate Charge (Qg) (Max) @ Vgs
Vgs(th) (Max) @ Id
Supplier Device Package
Package / Case
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
Operating Temperature
Grade
Mounting Type
Qualification
FET Feature
FET Type
Technology
Vgs (Max)
Results remaining140
Applied Filters:
U-MOSVIII-H
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeFET TypeOperating TemperaturePackage / CaseDrain to Source Voltage (Vdss)GradeSupplier Device PackageTechnologySeriesFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
TK100A06N1,S4X
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
TO-220-3 Full Pack
60 V
-
TO-220SIS
MOSFET (Metal Oxide)
U-MOSVIII-H
-
100A (Tc)
4V @ 1mA
10V
2.7mOhm @ 50A, 10V
140 nC @ 10 V
±20V
10500 pF @ 30 V
45W (Tc)
-
TK100A10N1,S4X
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
TO-220-3 Full Pack
100 V
-
TO-220SIS
MOSFET (Metal Oxide)
U-MOSVIII-H
-
100A (Tc)
4V @ 1mA
10V
3.8mOhm @ 50A, 10V
140 nC @ 10 V
±20V
8800 pF @ 50 V
45W (Tc)
-
TK56E12N1,S1X
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
TO-220-3
120 V
-
TO-220
MOSFET (Metal Oxide)
U-MOSVIII-H
-
56A (Ta)
4V @ 1mA
10V
7mOhm @ 28A, 10V
69 nC @ 10 V
±20V
4200 pF @ 60 V
168W (Tc)
-
SSM3K341TU,LF
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
175°C
3-SMD, Flat Lead
60 V
-
UFM
MOSFET (Metal Oxide)
U-MOSVIII-H
-
6A (Ta)
2.5V @ 100µA
4V, 10V
36mOhm @ 4A, 10V
9.3 nC @ 10 V
±20V
550 pF @ 10 V
1.8W (Ta)
-
SSM3K341R,LXHF
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
175°C
SOT-23-3 Flat Leads
60 V
Automotive
SOT-23F
MOSFET (Metal Oxide)
U-MOSVIII-H
-
6A (Ta)
2.5V @ 100µA
4V, 10V
36mOhm @ 5A, 10V
9.3 nC @ 10 V
±20V
550 pF @ 10 V
1.2W (Ta)
AEC-Q101
TPN14006NH,L1Q
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C (TJ)
8-PowerVDFN
60 V
-
8-TSON Advance (3.1x3.1)
MOSFET (Metal Oxide)
U-MOSVIII-H
-
13A (Ta)
4V @ 200µA
6.5V, 10V
14mOhm @ 6.5A, 10V
15 nC @ 10 V
±20V
1300 pF @ 30 V
700mW (Ta), 30W (Tc)
-
TK72E12N1,S1X
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
TO-220-3
120 V
-
TO-220-3
MOSFET (Metal Oxide)
U-MOSVIII-H
-
72A (Ta)
4V @ 1mA
10V
4.4mOhm @ 36A, 10V
130 nC @ 10 V
±20V
8100 pF @ 60 V
255W (Tc)
-
TPH1110ENH,L1Q
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C (TJ)
8-PowerVDFN
200 V
-
8-SOP Advance (5x5)
MOSFET (Metal Oxide)
U-MOSVIII-H
-
7.2A (Ta)
4V @ 200µA
10V
114mOhm @ 3.6A, 10V
7 nC @ 10 V
±20V
600 pF @ 100 V
1.6W (Ta), 42W (Tc)
-
TPH4R606NH,L1Q
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C (TJ)
8-PowerVDFN
60 V
-
8-SOP Advance (5x5)
MOSFET (Metal Oxide)
U-MOSVIII-H
-
32A (Ta)
4V @ 500µA
6.5V, 10V
4.6mOhm @ 16A, 10V
49 nC @ 10 V
±20V
3965 pF @ 30 V
1.6W (Ta), 63W (Tc)
-
TPN8R903NL,LQ
1+
$0.7606
5+
$0.7183
10+
$0.6761
Quantity
10,421 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C (TJ)
8-PowerVDFN
30 V
-
8-TSON Advance (3.1x3.1)
MOSFET (Metal Oxide)
U-MOSVIII-H
-
20A (Tc)
2.3V @ 100µA
4.5V, 10V
8.9mOhm @ 10A, 10V
9.8 nC @ 4.5 V
±20V
820 pF @ 15 V
700mW (Ta), 22W (Tc)
-
TPH8R903NL,LQ
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C (TJ)
8-PowerVDFN
30 V
-
8-SOP Advance (5x5)
MOSFET (Metal Oxide)
U-MOSVIII-H
-
20A (Tc)
2.3V @ 1mA
10V
8.9mOhm @ 10A, 10V
9.8 nC @ 10 V
±20V
820 pF @ 15 V
1.6W (Ta), 24W (Tc)
-
TPHR9003NL,L1Q
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C (TJ)
8-PowerVDFN
30 V
-
8-SOP Advance (5x5)
MOSFET (Metal Oxide)
U-MOSVIII-H
-
60A (Tc)
2.3V @ 1mA
4.5V, 10V
0.9mOhm @ 30A, 10V
74 nC @ 10 V
±20V
6900 pF @ 15 V
1.6W (Ta), 78W (Tc)
-
TPH2900ENH,L1Q
1+
$6.5915
5+
$6.2254
10+
$5.8592
Quantity
6,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C (TJ)
8-PowerVDFN
200 V
-
8-SOP Advance (5x5)
MOSFET (Metal Oxide)
U-MOSVIII-H
-
33A (Ta)
4V @ 1mA
10V
29mOhm @ 16.5A, 10V
22 nC @ 10 V
±20V
2200 pF @ 100 V
78W (Tc)
-
TK40E10N1,S1X
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
TO-220-3
100 V
-
TO-220
MOSFET (Metal Oxide)
U-MOSVIII-H
-
90A (Tc)
4V @ 500µA
10V
8.2mOhm @ 20A, 10V
49 nC @ 10 V
±20V
3000 pF @ 50 V
126W (Tc)
-
TK7S10N1Z,LXHQ
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
175°C
TO-252-3, DPak (2 Leads + Tab), SC-63
100 V
-
DPAK+
MOSFET (Metal Oxide)
U-MOSVIII-H
-
7A (Ta)
4V @ 100µA
10V
48mOhm @ 3.5A, 10V
7.1 nC @ 10 V
±20V
470 pF @ 10 V
50W (Tc)
-
TK72A08N1,S4X
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
TO-220-3 Full Pack
75 V
-
TO-220SIS
MOSFET (Metal Oxide)
U-MOSVIII-H
-
80A (Ta)
4V @ 1mA
10V
4.5mOhm @ 40A, 10V
175 nC @ 10 V
±20V
8200 pF @ 10 V
45W (Tc)
-
TPH5900CNH,L1Q
1+
$0.8746
5+
$0.8261
10+
$0.7775
Quantity
19,093 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C (TJ)
8-PowerVDFN
150 V
-
8-SOP Advance (5x5)
MOSFET (Metal Oxide)
U-MOSVIII-H
-
9A (Ta)
4V @ 200µA
10V
59mOhm @ 4.5A, 10V
7 nC @ 10 V
±20V
600 pF @ 75 V
1.6W (Ta), 42W (Tc)
-
TPH4R10ANL,L1Q
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C
8-PowerVDFN
100 V
-
8-SOP Advance (5x5)
MOSFET (Metal Oxide)
U-MOSVIII-H
-
92A (Ta), 70A (Tc)
2.5V @ 1mA
4.5V, 10V
4.1mOhm @ 35A, 10V
75 nC @ 10 V
±20V
6300 pF @ 50 V
2.5W (Ta), 67W (Tc)
-
TPH2R306NH,L1Q
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C (TJ)
8-PowerVDFN
60 V
-
8-SOP Advance (5x5)
MOSFET (Metal Oxide)
U-MOSVIII-H
-
60A (Tc)
4V @ 1mA
6.5V, 10V
2.3mOhm @ 30A, 10V
72 nC @ 10 V
±20V
6100 pF @ 30 V
1.6W (Ta), 78W (Tc)
-
TPH4R50ANH,L1Q
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C (TJ)
8-PowerVDFN
100 V
-
8-SOP Advance (5x5)
MOSFET (Metal Oxide)
U-MOSVIII-H
-
60A (Tc)
4V @ 1mA
10V
4.5mOhm @ 30A, 10V
58 nC @ 10 V
±20V
5200 pF @ 50 V
1.6W (Ta), 78W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.