U-MOSVIII-H Series, Single FETs, MOSFETs

Results:
140
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Power Dissipation (Max)
Gate Charge (Qg) (Max) @ Vgs
Vgs(th) (Max) @ Id
Supplier Device Package
Package / Case
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
Operating Temperature
Grade
Mounting Type
Qualification
FET Feature
FET Type
Technology
Vgs (Max)
Results remaining140
Applied Filters:
U-MOSVIII-H
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeFET TypeOperating TemperaturePackage / CaseDrain to Source Voltage (Vdss)GradeSupplier Device PackageTechnologySeriesFET FeatureCurrent - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
TK40A06N1,S4X
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
TO-220-3 Full Pack
60 V
-
TO-220SIS
MOSFET (Metal Oxide)
U-MOSVIII-H
-
40A (Tc)
10V
10.4mOhm @ 20A, 10V
4V @ 300µA
23 nC @ 10 V
±20V
1700 pF @ 30 V
30W (Tc)
-
TPW4R008NH,L1Q
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C (TJ)
8-PowerWDFN
80 V
-
8-DSOP Advance
MOSFET (Metal Oxide)
U-MOSVIII-H
-
116A (Tc)
10V
4mOhm @ 50A, 10V
4V @ 1mA
59 nC @ 10 V
±20V
5300 pF @ 40 V
800mW (Ta), 142W (Tc)
-
TK60S10N1L,LXHQ
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
175°C
TO-252-3, DPak (2 Leads + Tab), SC-63
100 V
-
DPAK+
MOSFET (Metal Oxide)
U-MOSVIII-H
-
60A (Ta)
6V, 10V
6.11mOhm @ 30A, 10V
3.5V @ 500µA
60 nC @ 10 V
±20V
4320 pF @ 10 V
180W (Tc)
-
TK40E06N1,S1X
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
TO-220-3
60 V
-
TO-220
MOSFET (Metal Oxide)
U-MOSVIII-H
-
40A (Ta)
10V
10.4mOhm @ 20A, 10V
4V @ 300µA
23 nC @ 10 V
±20V
1700 pF @ 30 V
67W (Tc)
-
TK100E10N1,S1X
1+
$0.9735
5+
$0.9194
10+
$0.8654
Quantity
30,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
TO-220-3
100 V
-
TO-220
MOSFET (Metal Oxide)
U-MOSVIII-H
-
100A (Ta)
10V
3.4mOhm @ 50A, 10V
4V @ 1mA
140 nC @ 10 V
±20V
8800 pF @ 50 V
255W (Tc)
-
TK11S10N1L,LXHQ
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
175°C
TO-252-3, DPak (2 Leads + Tab), SC-63
100 V
-
DPAK+
MOSFET (Metal Oxide)
U-MOSVIII-H
-
11A (Ta)
4.5V, 10V
28mOhm @ 5.5A, 10V
2.5V @ 100µA
15 nC @ 10 V
±20V
850 pF @ 10 V
65W (Tc)
-
TK40S06N1L,LXHQ
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
175°C
TO-252-3, DPak (2 Leads + Tab), SC-63
60 V
-
DPAK+
MOSFET (Metal Oxide)
U-MOSVIII-H
-
40A (Ta)
4.5V, 10V
18mOhm @ 20A, 10V
2.5V @ 200µA
26 nC @ 10 V
±20V
1650 pF @ 10 V
88.2W (Tc)
-
TPH3R203NL,L1Q
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C (TJ)
8-PowerVDFN
30 V
-
8-SOP Advance (5x5)
MOSFET (Metal Oxide)
U-MOSVIII-H
-
47A (Tc)
4.5V, 10V
3.2mOhm @ 23.5A, 10V
2.3V @ 300µA
21 nC @ 10 V
±20V
2100 pF @ 15 V
1.6W (Ta), 44W (Tc)
-
TK65S04N1L,LXHQ
1+
$1.0141
5+
$0.9577
10+
$0.9014
Quantity
17,918 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
175°C
TO-252-3, DPak (2 Leads + Tab), SC-63
40 V
-
DPAK+
MOSFET (Metal Oxide)
U-MOSVIII-H
-
65A (Ta)
4.5V, 10V
4.3mOhm @ 32.5A, 10V
2.5V @ 300µA
39 nC @ 10 V
±20V
2550 pF @ 10 V
107W (Tc)
-
XPN6R706NC,L1XHQ
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
175°C
8-PowerVDFN
60 V
-
8-TSON Advance-WF (3.1x3.1)
MOSFET (Metal Oxide)
U-MOSVIII-H
-
40A (Ta)
4.5V, 10V
6.7mOhm @ 20A, 10V
2.5V @ 300µA
35 nC @ 10 V
±20V
2000 pF @ 10 V
840mW (Ta), 100W (Tc)
-
TPH1R403NL,L1Q
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C (TJ)
8-PowerVDFN
30 V
-
8-SOP Advance (5x5)
MOSFET (Metal Oxide)
U-MOSVIII-H
-
60A (Ta)
4.5V, 10V
1.4mOhm @ 30A, 10V
2.3V @ 500µA
46 nC @ 10 V
±20V
4400 pF @ 15 V
1.6W (Ta), 64W (Tc)
-
TPN7R506NH,L1Q
1+
$0.7530
5+
$0.7111
10+
$0.6693
Quantity
4,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C (TJ)
8-PowerVDFN
60 V
-
8-TSON Advance (3.1x3.1)
MOSFET (Metal Oxide)
U-MOSVIII-H
-
26A (Tc)
6.5V, 10V
7.5mOhm @ 13A, 10V
4V @ 200µA
22 nC @ 10 V
±20V
1800 pF @ 30 V
700mW (Ta), 42W (Tc)
-
SSM3K361R,LF
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
175°C
SOT-23-3 Flat Leads
100 V
-
SOT-23F
MOSFET (Metal Oxide)
U-MOSVIII-H
-
3.5A (Ta)
4.5V, 10V
69mOhm @ 2A, 10V
2.5V @ 100µA
3.2 nC @ 4.5 V
±20V
430 pF @ 15 V
1.2W (Ta)
-
SSM3K341TU,LXHF
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
175°C
3-SMD, Flat Leads
60 V
Automotive
UFM
MOSFET (Metal Oxide)
U-MOSVIII-H
-
6A (Ta)
4V, 10V
36mOhm @ 4A, 10V
2.5V @ 100µA
9.3 nC @ 10 V
±20V
550 pF @ 10 V
1W (Ta)
AEC-Q101
SSM3K361TU,LXHF
AECQ MOSFET NCH 100V 3.5A SOT323
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
175°C
3-SMD, Flat Leads
100 V
Automotive
UFM
MOSFET (Metal Oxide)
U-MOSVIII-H
-
3.5A (Ta)
4.5V, 10V
69mOhm @ 2A, 10V
2.5V @ 100µA
3.2 nC @ 4.5 V
±20V
430 pF @ 15 V
1W (Ta)
AEC-Q101
TK40A10N1,S4X
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
TO-220-3 Full Pack
100 V
-
TO-220SIS
MOSFET (Metal Oxide)
U-MOSVIII-H
-
40A (Tc)
10V
8.2mOhm @ 20A, 10V
4V @ 500µA
49 nC @ 10 V
±20V
3000 pF @ 50 V
35W (Tc)
-
TK72E08N1,S1X
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
TO-220-3
80 V
-
TO-220
MOSFET (Metal Oxide)
U-MOSVIII-H
-
72A (Ta)
10V
4.3mOhm @ 36A, 10V
4V @ 1mA
81 nC @ 10 V
±20V
5500 pF @ 40 V
192W (Tc)
-
TK42A12N1,S4X
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
TO-220-3 Full Pack
120 V
-
TO-220SIS
MOSFET (Metal Oxide)
U-MOSVIII-H
-
42A (Tc)
10V
9.4mOhm @ 21A, 10V
4V @ 1mA
52 nC @ 10 V
±20V
3100 pF @ 60 V
35W (Tc)
-
TK32E12N1,S1X
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
TO-220-3
120 V
-
TO-220
MOSFET (Metal Oxide)
U-MOSVIII-H
-
60A (Tc)
10V
13.8mOhm @ 16A, 10V
4V @ 500µA
34 nC @ 10 V
±20V
2000 pF @ 60 V
98W (Tc)
-
TK100E06N1,S1X
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
TO-220-3
60 V
-
TO-220
MOSFET (Metal Oxide)
U-MOSVIII-H
-
100A (Ta)
10V
2.3mOhm @ 50A, 10V
4V @ 1mA
140 nC @ 10 V
±20V
10500 pF @ 30 V
255W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.