U-MOSVIII-H Series, Single FETs, MOSFETs

Results:
140
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Power Dissipation (Max)
Gate Charge (Qg) (Max) @ Vgs
Vgs(th) (Max) @ Id
Supplier Device Package
Package / Case
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
Operating Temperature
Grade
Mounting Type
Qualification
FET Feature
FET Type
Technology
Vgs (Max)
Results remaining140
Applied Filters:
U-MOSVIII-H
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypePackage / CaseFET TypeOperating TemperatureSupplier Device PackageGradeTechnologySeriesFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
TK46E08N1,S1X
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
N-Channel
150°C (TJ)
TO-220
-
MOSFET (Metal Oxide)
U-MOSVIII-H
-
80A (Tc)
4V @ 500µA
80 V
10V
8.4mOhm @ 23A, 10V
37 nC @ 10 V
±20V
2500 pF @ 40 V
103W (Tc)
-
TK42E12N1,S1X
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
N-Channel
150°C (TJ)
TO-220
-
MOSFET (Metal Oxide)
U-MOSVIII-H
-
88A (Tc)
4V @ 1mA
120 V
10V
9.4mOhm @ 21A, 10V
52 nC @ 10 V
±20V
3100 pF @ 60 V
140W (Tc)
-
SSM6K361NU,LF
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
6-WDFN Exposed Pad
N-Channel
150°C
6-UDFNB (2x2)
-
MOSFET (Metal Oxide)
U-MOSVIII-H
-
3.5A (Ta)
2.5V @ 100µA
100 V
4.5V, 10V
69mOhm @ 2A, 10V
3.2 nC @ 4.5 V
±20V
430 pF @ 15 V
1.25W (Ta)
-
SSM6K341NU,LF
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
6-WDFN Exposed Pad
N-Channel
150°C
6-UDFNB (2x2)
-
MOSFET (Metal Oxide)
U-MOSVIII-H
-
6A (Ta)
2.5V @ 100µA
60 V
4V, 10V
36mOhm @ 4A, 10V
9.3 nC @ 10 V
±20V
550 pF @ 10 V
2.5W (Ta)
-
TPH12008NH,L1Q
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerVDFN
N-Channel
150°C (TJ)
8-SOP Advance (5x5)
-
MOSFET (Metal Oxide)
U-MOSVIII-H
-
24A (Tc)
4V @ 300µA
80 V
10V
12.3mOhm @ 12A, 10V
22 nC @ 10 V
±20V
1900 pF @ 40 V
1.6W (Ta), 48W (Tc)
-
TPH4R50ANH1,LQ
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerTDFN
N-Channel
150°C
8-SOP Advance (5x5.75)
-
MOSFET (Metal Oxide)
U-MOSVIII-H
-
92A (Tc)
4V @ 1mA
100 V
10V
4.5mOhm @ 46A, 10V
58 nC @ 10 V
±20V
5200 pF @ 50 V
800mW (Ta)
-
TK33S10N1L,LQ
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
N-Channel
175°C
DPAK+
-
MOSFET (Metal Oxide)
U-MOSVIII-H
-
33A (Ta)
2.5V @ 500µA
100 V
4.5V, 10V
9.7mOhm @ 16.5A, 10V
33 nC @ 10 V
±20V
2250 pF @ 10 V
125W (Tc)
-
TK11S10N1L,LQ
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
N-Channel
175°C
DPAK+
-
MOSFET (Metal Oxide)
U-MOSVIII-H
-
11A (Ta)
2.5V @ 100µA
100 V
4.5V, 10V
28mOhm @ 5.5A, 10V
15 nC @ 10 V
±20V
850 pF @ 10 V
65W (Tc)
-
XPW6R30ANB,L1XHQ
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerVDFN
N-Channel
175°C
8-DSOP Advance
-
MOSFET (Metal Oxide)
U-MOSVIII-H
-
45A (Ta)
3.5V @ 500µA
100 V
6V, 10V
6.3mOhm @ 22.5A, 10V
52 nC @ 10 V
±20V
3240 pF @ 10 V
960mW (Ta), 132W (Tc)
-
TPN13008NH,L1Q
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerVDFN
N-Channel
150°C (TJ)
8-TSON Advance (3.1x3.1)
-
MOSFET (Metal Oxide)
U-MOSVIII-H
-
18A (Tc)
4V @ 200µA
80 V
10V
13.3mOhm @ 9A, 10V
18 nC @ 10 V
±20V
1600 pF @ 40 V
700mW (Ta), 42W (Tc)
-
TPH5200FNH,L1Q
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerVDFN
N-Channel
150°C (TJ)
8-SOP Advance (5x5)
-
MOSFET (Metal Oxide)
U-MOSVIII-H
-
26A (Tc)
4V @ 1mA
250 V
10V
52mOhm @ 13A, 10V
22 nC @ 10 V
±20V
2200 pF @ 100 V
78W (Tc)
-
TK160F10N1L,LXGQ
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
N-Channel
175°C
TO-220SM(W)
-
MOSFET (Metal Oxide)
U-MOSVIII-H
-
160A (Ta)
3.5V @ 1mA
100 V
6V, 10V
2.4mOhm @ 80A, 10V
122 nC @ 10 V
±20V
10100 pF @ 10 V
375W (Tc)
-
TPH3300CNH,L1Q
1+
$1.9014
5+
$1.7958
10+
$1.6901
Quantity
2,820 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerVDFN
N-Channel
150°C (TJ)
8-SOP Advance (5x5)
-
MOSFET (Metal Oxide)
U-MOSVIII-H
-
18A (Ta)
4V @ 300µA
150 V
10V
33mOhm @ 9A, 10V
10.6 nC @ 10 V
±20V
1100 pF @ 75 V
1.6W (Ta), 57W (Tc)
-
TPN1110ENH,L1Q
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerVDFN
N-Channel
150°C (TJ)
8-TSON Advance (3.1x3.1)
-
MOSFET (Metal Oxide)
U-MOSVIII-H
-
7.2A (Ta)
4V @ 200µA
200 V
10V
114mOhm @ 3.6A, 10V
7 nC @ 10 V
±20V
600 pF @ 100 V
700mW (Ta), 39W (Tc)
-
TPH1500CNH,L1Q
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerVDFN
N-Channel
150°C
8-SOP Advance (5x5)
-
MOSFET (Metal Oxide)
U-MOSVIII-H
-
38A (Tc)
4V @ 1mA
150 V
10V
15.4mOhm @ 19A, 10V
22 nC @ 10 V
±20V
2200 pF @ 75 V
1.6W (Ta), 78W (Tc)
-
TPN22006NH,LQ
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerVDFN
N-Channel
150°C (TJ)
8-TSON Advance (3.3x3.3)
-
MOSFET (Metal Oxide)
U-MOSVIII-H
-
9A (Ta)
4V @ 100µA
60 V
6.5V, 10V
22mOhm @ 4.5A, 10V
12 nC @ 10 V
±20V
710 pF @ 30 V
700mW (Ta), 18W (Tc)
-
TK30A06N1,S4X
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3 Full Pack
N-Channel
150°C (TJ)
TO-220SIS
-
MOSFET (Metal Oxide)
U-MOSVIII-H
-
30A (Tc)
4V @ 200µA
60 V
10V
15mOhm @ 15A, 10V
16 nC @ 10 V
±20V
1050 pF @ 30 V
25W (Tc)
-
TPW2900ENH,L1Q
PB-F POWER MOSFET TRANSISTOR DSO
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerWDFN
N-Channel
150°C
8-DSOP Advance
-
MOSFET (Metal Oxide)
U-MOSVIII-H
-
33A (Tc)
4V @ 1mA
200 V
10V
29mOhm @ 16.5A, 10V
22 nC @ 10 V
±20V
2200 pF @ 100 V
800mW (Ta), 142W (Tc)
-
SSM3K361R,LXHF
AECQ MOSFET NCH 100V 3.5A SOT23F
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
SOT-23-3 Flat Leads
N-Channel
175°C
SOT-23F
Automotive
MOSFET (Metal Oxide)
U-MOSVIII-H
-
3.5A (Ta)
2.5V @ 100µA
100 V
4.5V, 10V
69mOhm @ 2A, 10V
3.2 nC @ 4.5 V
±20V
430 pF @ 15 V
1.2W (Ta)
AEC-Q101
TK15S04N1L,LXHQ
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
N-Channel
175°C
DPAK+
-
MOSFET (Metal Oxide)
U-MOSVIII-H
-
15A (Ta)
2.5V @ 100µA
40 V
4.5V, 10V
17.8mOhm @ 7.5A, 10V
10 nC @ 10 V
±20V
610 pF @ 10 V
46W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.