U-MOSVIII-H Series, Single FETs, MOSFETs

Results:
140
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Power Dissipation (Max)
Gate Charge (Qg) (Max) @ Vgs
Vgs(th) (Max) @ Id
Supplier Device Package
Package / Case
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
Operating Temperature
Grade
Mounting Type
Qualification
FET Feature
FET Type
Technology
Vgs (Max)
Results remaining140
Applied Filters:
U-MOSVIII-H
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeFET TypeOperating TemperatureGradePackage / CaseTechnologySeriesFET FeatureVgs(th) (Max) @ IdDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Supplier Device PackageQualification
TPW4R50ANH,L1Q
1+
$3.1690
5+
$2.9930
10+
$2.8169
Quantity
750 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C (TJ)
-
8-PowerWDFN
MOSFET (Metal Oxide)
U-MOSVIII-H
-
4V @ 1mA
100 V
92A (Tc)
10V
4.5mOhm @ 46A, 10V
58 nC @ 10 V
±20V
5200 pF @ 50 V
800mW (Ta), 142W (Tc)
8-DSOP Advance
-
TK32A12N1,S4X
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
-
TO-220-3 Full Pack
MOSFET (Metal Oxide)
U-MOSVIII-H
-
4V @ 500µA
120 V
32A (Tc)
10V
13.8mOhm @ 16A, 10V
34 nC @ 10 V
±20V
2000 pF @ 60 V
30W (Tc)
TO-220SIS
-
TK22A10N1,S4X
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
-
TO-220-3 Full Pack
MOSFET (Metal Oxide)
U-MOSVIII-H
-
4V @ 300µA
100 V
22A (Tc)
10V
13.8mOhm @ 11A, 10V
28 nC @ 10 V
±20V
1800 pF @ 50 V
30W (Tc)
TO-220SIS
-
TK34E10N1,S1X
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
-
TO-220-3
MOSFET (Metal Oxide)
U-MOSVIII-H
-
4V @ 500µA
100 V
75A (Tc)
10V
9.5mOhm @ 17A, 10V
38 nC @ 10 V
±20V
2600 pF @ 50 V
103W (Tc)
TO-220
-
TK100A08N1,S4X
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
-
TO-220-3 Full Pack
MOSFET (Metal Oxide)
U-MOSVIII-H
-
4V @ 1mA
80 V
100A (Tc)
10V
3.2mOhm @ 50A, 10V
130 nC @ 10 V
±20V
9000 pF @ 40 V
45W (Tc)
TO-220SIS
-
TK65A10N1,S4X
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
-
TO-220-3 Full Pack
MOSFET (Metal Oxide)
U-MOSVIII-H
-
4V @ 1mA
100 V
65A (Tc)
10V
4.8mOhm @ 32.5A, 10V
81 nC @ 10 V
±20V
5400 pF @ 50 V
45W (Tc)
TO-220SIS
-
TK25S06N1L,LXHQ
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
175°C
-
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET (Metal Oxide)
U-MOSVIII-H
-
2.5V @ 100µA
60 V
25A (Ta)
4.5V, 10V
36.8mOhm @ 12.5A, 4.5V
15 nC @ 10 V
±20V
855 pF @ 10 V
57W (Tc)
DPAK+
-
TK56A12N1,S4X
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
-
TO-220-3 Full Pack
MOSFET (Metal Oxide)
U-MOSVIII-H
-
4V @ 1mA
120 V
56A (Tc)
10V
7.5mOhm @ 28A, 10V
69 nC @ 10 V
±20V
4200 pF @ 60 V
45W (Tc)
TO-220SIS
-
TK33S10N1Z,LXHQ
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
175°C
-
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET (Metal Oxide)
U-MOSVIII-H
-
4V @ 500µA
100 V
33A (Ta)
10V
9.7mOhm @ 16.5A, 10V
28 nC @ 10 V
±20V
2050 pF @ 10 V
125W (Tc)
DPAK+
-
TK200F04N1L,LXGQ
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
175°C
-
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
MOSFET (Metal Oxide)
U-MOSVIII-H
-
3V @ 1mA
40 V
200A (Ta)
6V, 10V
0.9mOhm @ 100A, 10V
214 nC @ 10 V
±20V
14920 pF @ 10 V
375W (Tc)
TO-220SM(W)
-
TK65E10N1,S1X
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
-
TO-220-3
MOSFET (Metal Oxide)
U-MOSVIII-H
-
4V @ 1mA
100 V
148A (Ta)
10V
4.8mOhm @ 32.5A, 10V
81 nC @ 10 V
±20V
5400 pF @ 50 V
192W (Tc)
TO-220
-
TK72A12N1,S4X
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
-
TO-220-3 Full Pack
MOSFET (Metal Oxide)
U-MOSVIII-H
-
4V @ 1mA
120 V
72A (Tc)
10V
4.5mOhm @ 36A, 10V
130 nC @ 10 V
±20V
8100 pF @ 60 V
45W (Tc)
TO-220SIS
-
TK100E08N1,S1X
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
-
TO-220-3
MOSFET (Metal Oxide)
U-MOSVIII-H
-
4V @ 1mA
80 V
100A (Ta)
10V
3.2mOhm @ 50A, 10V
130 nC @ 10 V
±20V
9000 pF @ 40 V
255W (Tc)
TO-220
-
TK22E10N1,S1X
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
-
TO-220-3
MOSFET (Metal Oxide)
U-MOSVIII-H
-
4V @ 300µA
100 V
52A (Tc)
10V
13.8mOhm @ 11A, 10V
28 nC @ 10 V
±20V
1800 pF @ 50 V
72W (Tc)
TO-220
-
TK40S06N1L,LQ
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
175°C
-
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET (Metal Oxide)
U-MOSVIII-H
-
2.5V @ 200µA
60 V
40A (Ta)
4.5V, 10V
10.5mOhm @ 20A, 10V
26 nC @ 10 V
±20V
1650 pF @ 10 V
88.2W (Tc)
DPAK+
-
TK25S06N1L,LQ
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
175°C
-
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET (Metal Oxide)
U-MOSVIII-H
-
2.5V @ 100µA
60 V
25A (Ta)
4.5V, 10V
18.5mOhm @ 12.5A, 10V
15 nC @ 10 V
±20V
855 pF @ 10 V
57W (Tc)
DPAK+
-
TPH6R30ANL,L1Q
1+
$0.7606
5+
$0.7183
10+
$0.6761
Quantity
53,489 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C
-
8-PowerVDFN
MOSFET (Metal Oxide)
U-MOSVIII-H
-
2.5V @ 500µA
100 V
66A (Ta), 45A (Tc)
4.5V, 10V
6.3mOhm @ 22.5A, 10V
55 nC @ 10 V
±20V
4300 pF @ 50 V
2.5W (Ta), 54W (Tc)
8-SOP Advance (5x5)
-
TK160F10N1L,LQ
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
175°C
-
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
MOSFET (Metal Oxide)
U-MOSVIII-H
-
3.5V @ 1mA
100 V
160A (Ta)
6V, 10V
2.4mOhm @ 80A, 10V
122 nC @ 10 V
±20V
10100 pF @ 10 V
375W (Tc)
TO-220SM(W)
-
TK46A08N1,S4X
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
-
TO-220-3 Full Pack
MOSFET (Metal Oxide)
U-MOSVIII-H
-
4V @ 500µA
80 V
46A (Tc)
10V
8.4mOhm @ 23A, 10V
37 nC @ 10 V
±20V
2500 pF @ 40 V
35W (Tc)
TO-220SIS
-
TK35E08N1,S1X
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
-
TO-220-3
MOSFET (Metal Oxide)
U-MOSVIII-H
-
4V @ 300µA
80 V
55A (Tc)
10V
12.2mOhm @ 17.5A, 10V
25 nC @ 10 V
±20V
1700 pF @ 40 V
72W (Tc)
TO-220
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.