U-MOSVIII-H Series, Single FETs, MOSFETs

Results:
140
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Power Dissipation (Max)
Gate Charge (Qg) (Max) @ Vgs
Vgs(th) (Max) @ Id
Supplier Device Package
Package / Case
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
Operating Temperature
Grade
Mounting Type
Qualification
FET Feature
FET Type
Technology
Vgs (Max)
Results remaining140
Applied Filters:
U-MOSVIII-H
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeFET TypeOperating TemperatureDrain to Source Voltage (Vdss)GradePackage / CaseTechnologySeriesFET FeatureVgs(th) (Max) @ IdCurrent - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Supplier Device PackageQualification
TPH2R306NH1,LQ
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C
60 V
-
8-PowerTDFN
MOSFET (Metal Oxide)
U-MOSVIII-H
-
4V @ 1mA
136A (Tc)
6.5V, 10V
2.3mOhm @ 50A, 10V
72 nC @ 10 V
±20V
6100 pF @ 30 V
800mW (Ta), 170W (Tc)
8-SOP Advance (5x5.75)
-
TK60F10N1L,LXGQ
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
175°C
100 V
-
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
MOSFET (Metal Oxide)
U-MOSVIII-H
-
3.5V @ 500µA
60A (Ta)
6V, 10V
6.11mOhm @ 30A, 10V
60 nC @ 10 V
±20V
4320 pF @ 10 V
205W (Tc)
TO-220SM(W)
-
TPN2R703NL,L1Q
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C (TJ)
30 V
-
8-PowerVDFN
MOSFET (Metal Oxide)
U-MOSVIII-H
-
2.3V @ 300µA
45A (Tc)
4.5V, 10V
2.7mOhm @ 22.5A, 10V
21 nC @ 10 V
±20V
2100 pF @ 15 V
700mW (Ta), 42W (Tc)
8-TSON Advance (3.1x3.1)
-
TK33S10N1L,LXHQ
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
175°C
100 V
-
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET (Metal Oxide)
U-MOSVIII-H
-
2.5V @ 500µA
33A (Ta)
4.5V, 10V
9.7mOhm @ 16.5A, 10V
33 nC @ 10 V
±20V
2250 pF @ 10 V
125W (Tc)
DPAK+
-
TPN5900CNH,L1Q
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C (TJ)
150 V
-
8-PowerVDFN
MOSFET (Metal Oxide)
U-MOSVIII-H
-
4V @ 200µA
9A (Ta)
10V
59mOhm @ 4.5A, 10V
7 nC @ 10 V
±20V
600 pF @ 75 V
700mW (Ta), 39W (Tc)
8-TSON Advance (3.1x3.1)
-
TK33S10N1Z,LQ
1+
$6.3380
5+
$5.9859
10+
$5.6338
Quantity
3,174 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
175°C (TJ)
100 V
-
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET (Metal Oxide)
U-MOSVIII-H
-
4V @ 500µA
33A (Ta)
10V
9.7mOhm @ 16.5A, 10V
28 nC @ 10 V
±20V
2050 pF @ 10 V
125W (Tc)
DPAK+
-
TPHR9003NL1,LQ
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C
30 V
-
8-PowerTDFN
MOSFET (Metal Oxide)
U-MOSVIII-H
-
2.3V @ 1mA
150A (Tc)
4.5V, 10V
0.9mOhm @ 50A, 10V
74 nC @ 10 V
±20V
6900 pF @ 15 V
800mW (Ta), 170W (Tc)
8-SOP Advance (5x5.75)
-
TPH1400ANH,L1Q
1+
$3.8028
5+
$3.5915
10+
$3.3803
Quantity
5,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C (TJ)
100 V
-
8-PowerVDFN
MOSFET (Metal Oxide)
U-MOSVIII-H
-
4V @ 300µA
24A (Tc)
10V
13.6mOhm @ 12A, 10V
22 nC @ 10 V
±20V
1900 pF @ 50 V
1.6W (Ta), 48W (Tc)
8-SOP Advance (5x5)
-
TK7S10N1Z,LQ
1+
$1.0141
5+
$0.9577
10+
$0.9014
Quantity
1,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
175°C (TJ)
100 V
-
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET (Metal Oxide)
U-MOSVIII-H
-
4V @ 100µA
7A (Ta)
10V
48mOhm @ 3.5A, 10V
7.1 nC @ 10 V
±20V
470 pF @ 10 V
50W (Tc)
DPAK+
-
TPN2010FNH,L1Q
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C (TJ)
250 V
-
8-PowerVDFN
MOSFET (Metal Oxide)
U-MOSVIII-H
-
4V @ 200µA
5.6A (Ta)
10V
198mOhm @ 2.8A, 10V
7 nC @ 10 V
±20V
600 pF @ 100 V
700mW (Ta), 39W (Tc)
8-TSON Advance (3.1x3.1)
-
XPH2R106NC,L1XHQ
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
175°C
60 V
Automotive
8-PowerVDFN
MOSFET (Metal Oxide)
U-MOSVIII-H
-
2.5V @ 1mA
110A (Ta)
-
2.1mOhm @ 55A, 10V
104 nC @ 10 V
±20V
6900 pF @ 10 V
960mW (Ta), 170W (Tc)
8-SOP Advance (5x5)
AEC-Q101
TK90S06N1L,LQ
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
175°C (TJ)
60 V
-
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET (Metal Oxide)
U-MOSVIII-H
-
2.5V @ 500µA
90A (Ta)
4.5V, 10V
3.3mOhm @ 45A, 10V
81 nC @ 10 V
±20V
5400 pF @ 10 V
157W (Tc)
DPAK+
-
TPWR8503NL,L1Q
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C (TJ)
30 V
-
8-PowerWDFN
MOSFET (Metal Oxide)
U-MOSVIII-H
-
2.3V @ 1mA
150A (Tc)
4.5V, 10V
0.85mOhm @ 50A, 10V
74 nC @ 10 V
±20V
6900 pF @ 15 V
800mW (Ta), 142W (Tc)
8-DSOP Advance
-
TK100S04N1L,LQ
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
175°C (TJ)
40 V
-
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET (Metal Oxide)
U-MOSVIII-H
-
2.5V @ 500µA
100A (Ta)
4.5V, 10V
2.3mOhm @ 50A, 10V
76 nC @ 10 V
±20V
5490 pF @ 10 V
100W (Tc)
DPAK+
-
TPW5200FNH,L1Q
PB-F POWER MOSFET TRANSISTOR DSO
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C
250 V
-
8-PowerWDFN
MOSFET (Metal Oxide)
U-MOSVIII-H
-
4V @ 1mA
26A (Tc)
10V
52mOhm @ 13A, 10V
22 nC @ 10 V
±20V
2200 pF @ 100 V
800mW (Ta), 142W (Tc)
8-DSOP Advance
-
TK30E06N1,S1X
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
60 V
-
TO-220-3
MOSFET (Metal Oxide)
U-MOSVIII-H
-
4V @ 200µA
43A (Ta)
10V
15mOhm @ 15A, 10V
16 nC @ 10 V
±20V
1050 pF @ 30 V
53W (Tc)
TO-220
-
TK58A06N1,S4X
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
60 V
-
TO-220-3 Full Pack
MOSFET (Metal Oxide)
U-MOSVIII-H
-
4V @ 500µA
58A (Tc)
10V
5.4mOhm @ 29A, 10V
46 nC @ 10 V
±20V
3400 pF @ 30 V
35W (Tc)
TO-220SIS
-
TK58E06N1,S1X
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
60 V
-
TO-220-3
MOSFET (Metal Oxide)
U-MOSVIII-H
-
4V @ 500µA
58A (Ta)
10V
5.4mOhm @ 29A, 10V
46 nC @ 10 V
±20V
3400 pF @ 30 V
110W (Tc)
TO-220
-
TK34A10N1,S4X
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
100 V
-
TO-220-3 Full Pack
MOSFET (Metal Oxide)
U-MOSVIII-H
-
4V @ 500µA
34A (Tc)
10V
9.5mOhm @ 17A, 10V
38 nC @ 10 V
±20V
2600 pF @ 50 V
35W (Tc)
TO-220SIS
-
TK35A08N1,S4X
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
80 V
-
TO-220-3 Full Pack
MOSFET (Metal Oxide)
U-MOSVIII-H
-
4V @ 300µA
35A (Tc)
10V
12.2mOhm @ 17.5A, 10V
25 nC @ 10 V
±20V
1700 pF @ 40 V
30W (Tc)
TO-220SIS
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.