U-MOSVIII-H Series, Single FETs, MOSFETs

Results:
140
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Power Dissipation (Max)
Gate Charge (Qg) (Max) @ Vgs
Vgs(th) (Max) @ Id
Supplier Device Package
Package / Case
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
Operating Temperature
Grade
Mounting Type
Qualification
FET Feature
FET Type
Technology
Vgs (Max)
Results remaining140
Applied Filters:
U-MOSVIII-H
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeFET TypePackage / CaseOperating TemperatureGradeSupplier Device PackageTechnologySeriesFET FeatureCurrent - Continuous Drain (Id) @ 25°CDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
TPH1110FNH,L1Q
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-PowerVDFN
150°C (TJ)
-
8-SOP Advance (5x5)
MOSFET (Metal Oxide)
U-MOSVIII-H
-
10A (Ta)
250 V
10V
112mOhm @ 5A, 10V
4V @ 300µA
11 nC @ 10 V
±20V
1100 pF @ 100 V
1.6W (Ta), 57W (Tc)
-
SSM3K361TU,LF
1+
$0.5070
5+
$0.4789
10+
$0.4507
Quantity
3,520 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
3-SMD, Flat Lead
175°C
-
UFM
MOSFET (Metal Oxide)
U-MOSVIII-H
-
3.5A (Ta)
100 V
4.5V, 10V
69mOhm @ 2A, 10V
2.5V @ 100µA
3.2 nC @ 4.5 V
±20V
430 pF @ 15 V
1W (Ta)
-
TPN4R303NL,L1Q
1+
$0.7606
5+
$0.7183
10+
$0.6761
Quantity
6,500 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-PowerVDFN
150°C (TJ)
-
8-TSON Advance (3.1x3.1)
MOSFET (Metal Oxide)
U-MOSVIII-H
-
40A (Tc)
30 V
4.5V, 10V
4.3mOhm @ 20A, 10V
2.3V @ 200µA
14.8 nC @ 10 V
±20V
1400 pF @ 15 V
700mW (Ta), 34W (Tc)
-
TPN3300ANH,LQ
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-PowerVDFN
150°C (TJ)
-
8-TSON Advance (3.3x3.3)
MOSFET (Metal Oxide)
U-MOSVIII-H
-
9.4A (Tc)
100 V
10V
33mOhm @ 4.7A, 10V
4V @ 100µA
11 nC @ 10 V
±20V
880 pF @ 50 V
700mW (Ta), 27W (Tc)
-
TPN30008NH,LQ
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-PowerVDFN
150°C (TJ)
-
8-TSON Advance (3.3x3.3)
MOSFET (Metal Oxide)
U-MOSVIII-H
-
9.6A (Tc)
80 V
10V
30mOhm @ 4.8A, 10V
4V @ 100µA
11 nC @ 10 V
±20V
920 pF @ 40 V
700mW (Ta), 27W (Tc)
-
TP86R203NL,LQ
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-SOIC (0.154", 3.90mm Width)
150°C (TJ)
-
8-SOP
MOSFET (Metal Oxide)
U-MOSVIII-H
-
19A (Ta)
30 V
4.5V, 10V
6.2mOhm @ 9A, 10V
2.3V @ 200µA
17 nC @ 10 V
±20V
1400 pF @ 15 V
1W (Tc)
-
TPH6R003NL,LQ
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-PowerVDFN
150°C (TJ)
-
8-SOP Advance (5x5)
MOSFET (Metal Oxide)
U-MOSVIII-H
-
38A (Tc)
30 V
4.5V, 10V
6mOhm @ 19A, 10V
2.3V @ 200µA
17 nC @ 10 V
±20V
1400 pF @ 15 V
1.6W (Ta), 34W (Tc)
-
TPN11006NL,LQ
1+
$1.5211
5+
$1.4366
10+
$1.3521
Quantity
10 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-PowerVDFN
150°C (TJ)
-
8-TSON Advance (3.1x3.1)
MOSFET (Metal Oxide)
U-MOSVIII-H
-
17A (Tc)
60 V
4.5V, 10V
11.4mOhm @ 8.5A, 10V
2.5V @ 200µA
23 nC @ 10 V
±20V
2000 pF @ 30 V
700mW (Ta), 30W (Tc)
-
TPH4R003NL,L1Q
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-PowerVDFN
150°C (TJ)
-
8-SOP Advance (5x5)
MOSFET (Metal Oxide)
U-MOSVIII-H
-
40A (Tc)
30 V
4.5V, 10V
4mOhm @ 20A, 10V
2.3V @ 200µA
14.8 nC @ 10 V
±20V
1400 pF @ 15 V
1.6W (Ta), 36W (Tc)
-
TPN11003NL,LQ
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-PowerVDFN
150°C (TJ)
-
8-TSON Advance (3.1x3.1)
MOSFET (Metal Oxide)
U-MOSVIII-H
-
11A (Tc)
30 V
4.5V, 10V
11mOhm @ 5.5A, 10V
2.3V @ 100µA
7.5 nC @ 10 V
±20V
660 pF @ 15 V
700mW (Ta), 19W (Tc)
-
TPN6R003NL,LQ
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-PowerVDFN
150°C (TJ)
-
8-TSON Advance (3.1x3.1)
MOSFET (Metal Oxide)
U-MOSVIII-H
-
27A (Tc)
30 V
4.5V, 10V
6mOhm @ 13.5A, 10V
2.3V @ 200µA
17 nC @ 10 V
±20V
1400 pF @ 15 V
700mW (Ta), 32W (Tc)
-
TPN1600ANH,L1Q
1+
$10.1408
5+
$9.5775
10+
$9.0141
Quantity
1,470 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-PowerVDFN
150°C (TJ)
-
8-TSON Advance (3.1x3.1)
MOSFET (Metal Oxide)
U-MOSVIII-H
-
17A (Tc)
100 V
10V
16mOhm @ 8.5A, 10V
4V @ 200µA
19 nC @ 10 V
±20V
1600 pF @ 50 V
700mW (Ta), 42W (Tc)
-
TP89R103NL,LQ
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-SOIC (0.154", 3.90mm Width)
150°C (TJ)
-
8-SOP
MOSFET (Metal Oxide)
U-MOSVIII-H
-
15A (Tc)
30 V
4.5V, 10V
9.1mOhm @ 7.5A, 10V
2.3V @ 100µA
9.8 nC @ 10 V
±20V
820 pF @ 15 V
1W (Tc)
-
TPH11003NL,LQ
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-PowerVDFN
150°C (TJ)
-
8-SOP Advance (5x5)
MOSFET (Metal Oxide)
U-MOSVIII-H
-
32A (Ta)
30 V
4.5V, 10V
11mOhm @ 5.5A, 10V
2.3V @ 100µA
7.5 nC @ 10 V
±20V
660 pF @ 15 V
1.6W (Ta), 21W (Tc)
-
TPW2R508NH,L1Q
PB-F POWER MOSFET TRANSISTOR DOS
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-PowerWDFN
150°C
-
8-DSOP Advance
MOSFET (Metal Oxide)
U-MOSVIII-H
-
150A (Ta)
75 V
10V
2.5mOhm @ 50A, 10V
4V @ 1mA
72 nC @ 10 V
±20V
6000 pF @ 37.5 V
800mW (Ta), 142W (Tc)
-
TPW1500CNH,L1Q
PB-F POWER MOSFET TRANSISTOR DSO
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-PowerWDFN
150°C
-
8-DSOP Advance
MOSFET (Metal Oxide)
U-MOSVIII-H
-
38A (Tc)
150 V
10V
15.4mOhm @ 19A, 10V
4V @ 1mA
22 nC @ 10 V
±20V
2200 pF @ 75 V
800mW (Ta), 142W (Tc)
-
TPH4R008NH,L1Q
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-PowerVDFN
150°C (TJ)
-
8-SOP Advance (5x5)
MOSFET (Metal Oxide)
U-MOSVIII-H
-
60A (Tc)
80 V
10V
4mOhm @ 30A, 10V
4V @ 1mA
59 nC @ 10 V
±20V
5300 pF @ 40 V
1.6W (Ta), 78W (Tc)
-
TPH6400ENH,L1Q
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-PowerVDFN
150°C (TJ)
-
8-SOP Advance (5x5)
MOSFET (Metal Oxide)
U-MOSVIII-H
-
13A (Ta)
200 V
10V
64mOhm @ 6.5A, 10V
4V @ 300µA
11.2 nC @ 10 V
±20V
1100 pF @ 100 V
1.6W (Ta), 57W (Tc)
-
TPH7R506NH,L1Q
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-PowerVDFN
150°C (TJ)
-
8-SOP Advance (5x5)
MOSFET (Metal Oxide)
U-MOSVIII-H
-
22A (Ta)
60 V
10V
7.5mOhm @ 11A, 10V
4V @ 300µA
31 nC @ 10 V
±20V
2320 pF @ 30 V
1.6W (Ta), 45W (Tc)
-
TPH2R608NH,L1Q
1+
$6.3380
5+
$5.9859
10+
$5.6338
Quantity
20,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-PowerVDFN
150°C (TJ)
-
8-SOP Advance (5x5)
MOSFET (Metal Oxide)
U-MOSVIII-H
-
150A (Tc)
75 V
10V
2.6mOhm @ 50A, 10V
4V @ 1mA
72 nC @ 10 V
±20V
6000 pF @ 37.5 V
142W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.