U-MOSVIII-H Series, Single FETs, MOSFETs

Results:
140
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Power Dissipation (Max)
Gate Charge (Qg) (Max) @ Vgs
Vgs(th) (Max) @ Id
Supplier Device Package
Package / Case
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
Operating Temperature
Grade
Mounting Type
Qualification
FET Feature
FET Type
Technology
Vgs (Max)
Results remaining140
Applied Filters:
U-MOSVIII-H
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeFET TypeOperating TemperaturePackage / CaseSupplier Device PackageGradeTechnologySeriesFET FeatureVgs(th) (Max) @ IdDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
TK65G10N1,RQ
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
D2PAK
-
MOSFET (Metal Oxide)
U-MOSVIII-H
-
4V @ 1mA
100 V
65A (Ta)
10V
4.5mOhm @ 32.5A, 10V
81 nC @ 10 V
±20V
5400 pF @ 50 V
156W (Tc)
-
SSM3K341R,LF
1+
$1.2676
5+
$1.1972
10+
$1.1268
Quantity
10,100 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
-55°C ~ 175°C (TJ)
SOT-23-3 Flat Leads
SOT-23F
-
MOSFET (Metal Oxide)
U-MOSVIII-H
-
2.5V @ 100µA
60 V
6A (Ta)
4V, 10V
36mOhm @ 5A, 10V
9.3 nC @ 10 V
±20V
550 pF @ 10 V
1.2W (Ta)
-
TPH2010FNH,L1Q
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C (TJ)
8-PowerVDFN
8-SOP Advance (5x5)
-
MOSFET (Metal Oxide)
U-MOSVIII-H
-
4V @ 200µA
250 V
5.6A (Ta)
10V
198mOhm @ 2.8A, 10V
7 nC @ 10 V
±20V
600 pF @ 100 V
1.6W (Ta), 42W (Tc)
-
TPH8R008NH,L1Q
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C (TJ)
8-PowerVDFN
8-SOP Advance (5x5)
-
MOSFET (Metal Oxide)
U-MOSVIII-H
-
4V @ 500µA
80 V
34A (Tc)
10V
8mOhm @ 17A, 10V
35 nC @ 10 V
±20V
3000 pF @ 40 V
1.6W (Ta), 61W (Tc)
-
TK100S04N1L,LXHQ
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
175°C
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK+
-
MOSFET (Metal Oxide)
U-MOSVIII-H
-
2.5V @ 500µA
40 V
100A (Ta)
4.5V, 10V
2.3mOhm @ 50A, 10V
76 nC @ 10 V
±20V
5490 pF @ 10 V
180W (Tc)
-
XPH6R30ANB,L1XHQ
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
175°C
8-PowerVDFN
8-SOP Advance (5x5)
-
MOSFET (Metal Oxide)
U-MOSVIII-H
-
3.5V @ 500µA
100 V
45A (Ta)
6V, 10V
6.3mOhm @ 22.5A, 10V
52 nC @ 10 V
±20V
3240 pF @ 10 V
960mW (Ta), 132W (Tc)
-
TK55S10N1,LQ
1+
$7.6056
5+
$7.1831
10+
$6.7606
Quantity
3,300 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
175°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK+
-
MOSFET (Metal Oxide)
U-MOSVIII-H
-
4V @ 500µA
100 V
55A (Ta)
10V
6.5mOhm @ 27.5A, 10V
49 nC @ 10 V
±20V
3280 pF @ 10 V
157W (Tc)
-
XPH4R10ANB,L1XHQ
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
175°C
8-PowerVDFN
8-SOP Advance (5x5)
-
MOSFET (Metal Oxide)
U-MOSVIII-H
-
3.5V @ 1mA
100 V
70A (Ta)
6V, 10V
4.1mOhm @ 35A, 10V
75 nC @ 10 V
±20V
4970 pF @ 10 V
960mW (Ta), 170W (Tc)
-
TK160F10N1,LXGQ
1+
$25.3521
5+
$23.9437
10+
$22.5352
Quantity
3,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
175°C
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-220SM(W)
-
MOSFET (Metal Oxide)
U-MOSVIII-H
-
4V @ 1mA
100 V
160A (Ta)
10V
2.4mOhm @ 80A, 10V
121 nC @ 10 V
±20V
8510 pF @ 10 V
375W (Tc)
-
TK15S04N1L,LQ
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
175°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK+
-
MOSFET (Metal Oxide)
U-MOSVIII-H
-
2.5V @ 100µA
40 V
15A (Ta)
4.5V, 10V
17.8mOhm @ 7.5A, 10V
10 nC @ 10 V
±20V
610 pF @ 10 V
46W (Tc)
-
XPH3R206NC,L1XHQ
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
175°C
8-PowerVDFN
8-SOP Advance (5x5)
Automotive
MOSFET (Metal Oxide)
U-MOSVIII-H
-
2.5V @ 500µA
60 V
70A (Ta)
-
3.2mOhm @ 35A, 10V
65 nC @ 10 V
±20V
4180 pF @ 10 V
960mW (Ta), 132W (Tc)
AEC-Q101
TPH14006NH,L1Q
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C (TJ)
8-PowerVDFN
8-SOP Advance (5x5)
-
MOSFET (Metal Oxide)
U-MOSVIII-H
-
4V @ 200µA
60 V
14A (Ta)
6.5V, 10V
14mOhm @ 7A, 10V
16 nC @ 10 V
±20V
1300 pF @ 30 V
1.6W (Ta), 32W (Tc)
-
TK55S10N1,LXHQ
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
175°C
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK+
-
MOSFET (Metal Oxide)
U-MOSVIII-H
-
4V @ 500µA
100 V
55A (Ta)
10V
6.5mOhm @ 27.5A, 10V
49 nC @ 10 V
±20V
3280 pF @ 10 V
157W (Tc)
-
TK90S06N1L,LXHQ
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
175°C
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK+
-
MOSFET (Metal Oxide)
U-MOSVIII-H
-
2.5V @ 500µA
60 V
90A (Ta)
4.5V, 10V
3.3mOhm @ 45A, 10V
81 nC @ 10 V
±20V
5400 pF @ 10 V
157W (Tc)
-
TPH11006NL,LQ
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C (TJ)
8-PowerVDFN
8-SOP Advance (5x5)
-
MOSFET (Metal Oxide)
U-MOSVIII-H
-
2.5V @ 200µA
60 V
17A (Tc)
4.5V, 10V
11.4mOhm @ 8.5A, 10V
23 nC @ 10 V
±20V
2000 pF @ 30 V
1.6W (Ta), 34W (Tc)
-
SSM6K810R,LF
SMALL SIGNAL MOSFET N-CH VDSS=10
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
175°C
6-SMD, Flat Leads
6-TSOP-F
-
MOSFET (Metal Oxide)
U-MOSVIII-H
-
2.5V @ 100µA
100 V
3.5A (Ta)
4.5V, 10V
69mOhm @ 2A, 10V
3.2 nC @ 4.5 V
±20V
430 pF @ 15 V
1.5W (Ta)
-
SSM6K809R,LF
SMALL SIGNAL MOSFET N-CH VDSS=60
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
175°C
6-SMD, Flat Leads
6-TSOP-F
-
MOSFET (Metal Oxide)
U-MOSVIII-H
-
2.5V @ 100µA
60 V
6A (Ta)
4V, 10V
36mOhm @ 5A, 10V
9.3 nC @ 10 V
±20V
550 pF @ 10 V
1.5W (Ta)
-
TPH8R80ANH,L1Q
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C (TJ)
8-PowerVDFN
8-SOP Advance (5x5)
-
MOSFET (Metal Oxide)
U-MOSVIII-H
-
4V @ 500µA
100 V
32A (Tc)
10V
8.8mOhm @ 16A, 10V
33 nC @ 10 V
±20V
2800 pF @ 50 V
1.6W (Ta), 61W (Tc)
-
TK65S04N1L,LQ
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
175°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK+
-
MOSFET (Metal Oxide)
U-MOSVIII-H
-
2.5V @ 300µA
40 V
65A (Ta)
10V
4.3mOhm @ 32.5A, 10V
39 nC @ 10 V
±20V
2550 pF @ 10 V
107W (Tc)
-
TPH5R906NH,L1Q
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C (TJ)
8-PowerVDFN
8-SOP Advance (5x5)
-
MOSFET (Metal Oxide)
U-MOSVIII-H
-
4V @ 300µA
60 V
28A (Ta)
10V
5.9mOhm @ 14A, 10V
38 nC @ 10 V
±20V
3100 pF @ 30 V
1.6W (Ta), 57W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.