TrenchMV™ Series, Single FETs, MOSFETs

Results:
70
Manufacturer
Series
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Supplier Device Package
Package / Case
Vgs(th) (Max) @ Id
Drain to Source Voltage (Vdss)
Mounting Type
Vgs (Max)
Operating Temperature
FET Feature
FET Type
Grade
Qualification
Technology
Drive Voltage (Max Rds On, Min Rds On)
Results remaining70
Applied Filters:
TrenchMV™
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeFET TypePackage / CaseOperating TemperatureGradeTechnologySeriesFET FeatureCurrent - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsVgs(th) (Max) @ IdDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Gate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Supplier Device PackageQualification
IXTA160N075T7
MOSFET N-CH 75V 160A TO263-7
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-7, D²Pak (6 Leads + Tab)
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
TrenchMV™
-
160A (Tc)
6mOhm @ 25A, 10V
4V @ 250µA
75 V
10V
112 nC @ 10 V
±20V
4950 pF @ 25 V
360W (Tc)
TO-263-7 (IXTA)
-
IXTA180N085T
MOSFET N-CH 85V 180A TO263
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
TrenchMV™
-
180A (Tc)
5.5mOhm @ 25A, 10V
4V @ 250µA
85 V
10V
170 nC @ 10 V
±20V
7500 pF @ 25 V
430W (Tc)
TO-263AA
-
IXTA182N055T7
MOSFET N-CH 55V 182A TO263-7
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-7, D²Pak (6 Leads + Tab)
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
TrenchMV™
-
182A (Tc)
5mOhm @ 25A, 10V
4V @ 250µA
55 V
10V
114 nC @ 10 V
±20V
4850 pF @ 25 V
360W (Tc)
TO-263-7 (IXTA)
-
IXTA180N085T7
MOSFET N-CH 85V 180A TO263-7
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-7, D²Pak (6 Leads + Tab)
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
TrenchMV™
-
180A (Tc)
5.5mOhm @ 25A, 10V
4V @ 250µA
85 V
10V
170 nC @ 10 V
±20V
7500 pF @ 25 V
430W (Tc)
TO-263-7 (IXTA)
-
IXTA182N055T
MOSFET N-CH 55V 182A TO263
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
TrenchMV™
-
182A (Tc)
5mOhm @ 25A, 10V
4V @ 250µA
55 V
10V
114 nC @ 10 V
±20V
4850 pF @ 25 V
360W (Tc)
TO-263AA
-
IXTH182N055T
MOSFET N-CH 55V 182A TO247
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-247-3
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
TrenchMV™
-
182A (Tc)
5mOhm @ 25A, 10V
4V @ 250µA
55 V
10V
114 nC @ 10 V
±20V
4850 pF @ 25 V
360W (Tc)
TO-247 (IXTH)
-
IXTH200N085T
MOSFET N-CH 85V 200A TO247
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-247-3
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
TrenchMV™
-
200A (Tc)
5mOhm @ 25A, 10V
4V @ 250µA
85 V
10V
152 nC @ 10 V
±20V
7600 pF @ 25 V
480W (Tc)
TO-247 (IXTH)
-
IXTH280N055T
MOSFET N-CH 55V 280A TO247
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-247-3
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
TrenchMV™
-
280A (Tc)
3.2mOhm @ 50A, 10V
4V @ 250µA
55 V
10V
200 nC @ 10 V
±20V
9700 pF @ 25 V
550W (Tc)
TO-247 (IXTH)
-
IXTV230N085T
MOSFET N-CH 85V 230A PLUS220
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3, Short Tab
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
TrenchMV™
-
230A (Tc)
4.4mOhm @ 50A, 10V
4V @ 250µA
85 V
10V
187 nC @ 10 V
±20V
9900 pF @ 25 V
550W (Tc)
PLUS220
-
IXTY12N06T
MOSFET N-CH 60V 12A TO252
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
TrenchMV™
-
12A (Tc)
85mOhm @ 6A, 10V
4V @ 25µA
60 V
10V
3.4 nC @ 10 V
±20V
256 pF @ 25 V
33W (Tc)
TO-252AA
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.