TrenchMV™ Series, Single FETs, MOSFETs

Results:
70
Manufacturer
Series
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Supplier Device Package
Package / Case
Vgs(th) (Max) @ Id
Drain to Source Voltage (Vdss)
Mounting Type
Vgs (Max)
Operating Temperature
FET Feature
FET Type
Grade
Qualification
Technology
Drive Voltage (Max Rds On, Min Rds On)
Results remaining70
Applied Filters:
TrenchMV™
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeFET TypePackage / CaseSupplier Device PackageOperating TemperatureGradeTechnologySeriesFET FeatureRds On (Max) @ Id, VgsVgs(th) (Max) @ IdDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Gate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
IXTF250N075T
MOSFET N-CH 75V 140A I4PAC
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
i4-Pac™-5
ISOPLUS i4-PAC™
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
TrenchMV™
-
4.4mOhm @ 50A, 10V
4V @ 250µA
75 V
140A (Tc)
10V
200 nC @ 10 V
±20V
9900 pF @ 25 V
200W (Tc)
-
IXTF230N085T
MOSFET N-CH 85V 130A I4PAC
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
i4-Pac™-5
ISOPLUS i4-PAC™
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
TrenchMV™
-
5.3mOhm @ 50A, 10V
4V @ 250mA
85 V
130A (Tc)
10V
187 nC @ 10 V
±20V
9900 pF @ 25 V
200W (Tc)
-
IXTH160N075T
MOSFET N-CH 75V 160A TO247
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-247-3
TO-247 (IXTH)
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
TrenchMV™
-
6mOhm @ 25A, 10V
4V @ 250µA
75 V
160A (Tc)
10V
112 nC @ 10 V
±20V
4950 pF @ 25 V
360W (Tc)
-
IXTH152N085T
MOSFET N-CH 85V 152A TO247
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-247-3
TO-247 (IXTH)
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
TrenchMV™
-
7mOhm @ 25A, 10V
4V @ 250µA
85 V
152A (Tc)
10V
114 nC @ 10 V
±20V
5500 pF @ 25 V
360W (Tc)
-
IXTH230N085T
MOSFET N-CH 85V 230A TO247
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-247-3
TO-247 (IXTH)
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
TrenchMV™
-
4.4mOhm @ 50A, 10V
4V @ 250µA
85 V
230A (Tc)
10V
187 nC @ 10 V
±20V
9900 pF @ 25 V
550W (Tc)
-
IXTH220N075T
MOSFET N-CH 75V 220A TO247
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-247-3
TO-247 (IXTH)
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
TrenchMV™
-
4.5mOhm @ 25A, 10V
4V @ 250µA
75 V
220A (Tc)
10V
165 nC @ 10 V
±20V
7700 pF @ 25 V
480W (Tc)
-
IXTH220N055T
MOSFET N-CH 55V 220A TO247
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-247-3
TO-247 (IXTH)
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
TrenchMV™
-
4mOhm @ 25A, 10V
4V @ 250µA
55 V
220A (Tc)
10V
158 nC @ 10 V
±20V
7200 pF @ 25 V
430W (Tc)
-
IXTH250N075T
MOSFET N-CH 75V 250A TO247
1+
$11.4085
5+
$10.7746
10+
$10.1408
Quantity
50 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-247-3
TO-247 (IXTH)
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
TrenchMV™
-
4mOhm @ 50A, 10V
4V @ 250µA
75 V
250A (Tc)
10V
200 nC @ 10 V
±20V
9900 pF @ 25 V
550W (Tc)
-
IXTH240N055T
MOSFET N-CH 55V 240A TO247
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-247-3
TO-247 (IXTH)
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
TrenchMV™
-
3.6mOhm @ 25A, 10V
4V @ 250µA
55 V
240A (Tc)
10V
170 nC @ 10 V
±20V
7600 pF @ 25 V
480W (Tc)
-
IXTP152N085T
MOSFET N-CH 85V 152A TO220AB
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
TO-220-3
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
TrenchMV™
-
7mOhm @ 25A, 10V
4V @ 250µA
85 V
152A (Tc)
10V
114 nC @ 10 V
±20V
5500 pF @ 25 V
360W (Tc)
-
IXTP160N075T
MOSFET N-CH 75V 160A TO220AB
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
TO-220-3
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
TrenchMV™
-
6mOhm @ 25A, 10V
4V @ 250µA
75 V
160A (Tc)
10V
112 nC @ 10 V
±20V
4950 pF @ 25 V
360W (Tc)
-
IXTP180N085T
MOSFET N-CH 85V 180A TO220AB
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
TO-220-3
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
TrenchMV™
-
5.5mOhm @ 25A, 10V
4V @ 250µA
85 V
180A (Tc)
10V
170 nC @ 10 V
±20V
7500 pF @ 25 V
430W (Tc)
-
IXTP182N055T
MOSFET N-CH 55V 182A TO220AB
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
TO-220-3
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
TrenchMV™
-
5mOhm @ 25A, 10V
4V @ 250µA
55 V
182A (Tc)
10V
114 nC @ 10 V
±20V
4850 pF @ 25 V
360W (Tc)
-
IXTP200N085T
MOSFET N-CH 85V 200A TO220AB
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
TO-220-3
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
TrenchMV™
-
5mOhm @ 25A, 10V
4V @ 250µA
85 V
200A (Tc)
10V
152 nC @ 10 V
±20V
7600 pF @ 25 V
480W (Tc)
-
IXTP200N075T
MOSFET N-CH 75V 200A TO220AB
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
TO-220-3
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
TrenchMV™
-
5mOhm @ 25A, 10V
4V @ 250µA
75 V
200A (Tc)
10V
160 nC @ 10 V
±20V
6800 pF @ 25 V
430W (Tc)
-
IXTP220N075T
MOSFET N-CH 75V 220A TO220AB
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
TO-220-3
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
TrenchMV™
-
4.5mOhm @ 25A, 10V
4V @ 250µA
75 V
220A (Tc)
10V
165 nC @ 10 V
±20V
7700 pF @ 25 V
480W (Tc)
-
IXTP220N055T
MOSFET N-CH 55V 220A TO220AB
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
TO-220-3
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
TrenchMV™
-
4mOhm @ 25A, 10V
4V @ 250µA
55 V
220A (Tc)
10V
158 nC @ 10 V
±20V
7200 pF @ 25 V
430W (Tc)
-
IXTP55N075T
MOSFET N-CH 75V 55A TO220AB
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
TO-220-3
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
TrenchMV™
-
19.5mOhm @ 27.5A, 10V
4V @ 25µA
75 V
55A (Tc)
10V
33 nC @ 10 V
±20V
1400 pF @ 25 V
130W (Tc)
-
IXTP50N085T
MOSFET N-CH 85V 50A TO220AB
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
TO-220-3
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
TrenchMV™
-
23mOhm @ 25A, 10V
4V @ 25µA
85 V
50A (Tc)
10V
34 nC @ 10 V
±20V
1460 pF @ 25 V
130W (Tc)
-
IXTP64N055T
MOSFET N-CH 55V 64A TO220AB
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
TO-220-3
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
TrenchMV™
-
13mOhm @ 500mA, 10V
4V @ 25µA
55 V
64A (Tc)
10V
37 nC @ 10 V
±20V
1420 pF @ 25 V
130W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.