STripFET™ V Series, Single FETs, MOSFETs

Results:
46
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Supplier Device Package
Package / Case
Vgs(th) (Max) @ Id
Vgs (Max)
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
Operating Temperature
Mounting Type
Grade
Qualification
FET Feature
FET Type
Technology
Results remaining46
Applied Filters:
STripFET™ V
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeFET TypePackage / CaseSupplier Device PackageDrain to Source Voltage (Vdss)Operating TemperatureGradeTechnologySeriesFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
STU95N2LH5
MOSFET N-CH 25V 80A IPAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-251-3 Short Leads, IPak, TO-251AA
TO-251 (IPAK)
25 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
STripFET™ V
-
80A (Tc)
1V @ 250µA
5V, 10V
4.9mOhm @ 40A, 10V
13.4 nC @ 5 V
±25V
1817 pF @ 25 V
70W (Tc)
-
STL51N3LLH5
MOSFET N-CH 30V 51A POWERFLAT
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-PowerVDFN
PowerFlat™ (5x6)
30 V
-55°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
STripFET™ V
-
51A (Tc)
2.5V @ 250µA
4.5V, 10V
14.5mOhm @ 6.3A, 10V
5 nC @ 4.5 V
±22V
724 pF @ 25 V
62.5W (Tc)
-
STL11N4LLF5
MOSFET N-CH 40V 11A POWERFLAT
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-PowerVDFN
PowerFlat™ (3.3x3.3)
40 V
-55°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
STripFET™ V
-
11A (Tc)
2.5V @ 250µA
4.5V, 10V
9.7mOhm @ 5.5A, 10V
12.9 nC @ 4.5 V
±20V
1570 pF @ 25 V
2.9W (Ta), 50W (Tc)
-
STR2N2VH5
MOSFET N-CH 20V 2.3A SOT23
1+
$1.2676
5+
$1.1972
10+
$1.1268
Quantity
30 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-236-3, SC-59, SOT-23-3
SOT-23-3
20 V
-55°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
STripFET™ V
-
2.3A (Tj)
700mV @ 250µA (Min)
2.5V, 4.5V
30mOhm @ 2A, 4.5V
4.6 nC @ 4.5 V
±8V
367 pF @ 16 V
350mW (Tc)
-
STD95N2LH5
MOSFET N-CH 25V 80A DPAK
1+
$14.1972
5+
$13.4085
10+
$12.6197
Quantity
8,539 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
25 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
STripFET™ V
-
80A (Tc)
1V @ 250µA
5V, 10V
4.5mOhm @ 40A, 10V
13.4 nC @ 5 V
±22V
1817 pF @ 25 V
70W (Tc)
-
STK38N3LLH5
MOSFET N-CH 30V 38A POLARPAK
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
PolarPak®
PolarPak®
30 V
-55°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
STripFET™ V
-
38A (Tc)
2.5V @ 250µA
4.5V, 10V
1.55mOhm @ 19A, 10V
41.7 nC @ 4.5 V
±22V
4640 pF @ 25 V
5.2W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.