STripFET™ V Series, Single FETs, MOSFETs

Results:
46
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Supplier Device Package
Package / Case
Vgs(th) (Max) @ Id
Vgs (Max)
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
Operating Temperature
Mounting Type
Grade
Qualification
FET Feature
FET Type
Technology
Results remaining46
Applied Filters:
STripFET™ V
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeFET TypePackage / CaseSupplier Device PackageDrain to Source Voltage (Vdss)Operating TemperatureGradeTechnologySeriesFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
STD40N2LH5
MOSFET N-CH 25V 40A DPAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
25 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
STripFET™ V
-
40A (Tc)
1V @ 250µA
5V, 10V
11.8mOhm @ 20A, 10V
6.3 nC @ 5 V
±22V
700 pF @ 20 V
35W (Tc)
-
STD70N2LH5
MOSFET N-CH 25V 48A DPAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
25 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
STripFET™ V
-
48A (Tc)
1V @ 250µA
5V, 10V
7.1mOhm @ 24A, 10V
8 nC @ 5 V
±22V
1300 pF @ 25 V
60W (Tc)
-
STK30N2LLH5
MOSFET N-CH 25V 30A POLARPAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
PolarPak®
PolarPak®
25 V
-55°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
STripFET™ V
-
30A (Tc)
2.5V @ 250µA
4.5V, 10V
2.9mOhm @ 15A, 10V
18 nC @ 4.5 V
±20V
2290 pF @ 25 V
5.2W (Tc)
-
STS15N4LLF5
MOSFET N-CH 40V 15A 8SO
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-SOIC (0.154", 3.90mm Width)
8-SOIC
40 V
-55°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
STripFET™ V
-
15A (Tc)
1V @ 250µA
4.5V, 10V
6.7mOhm @ 7.5A, 10V
12.9 nC @ 4.5 V
±16V
1570 pF @ 25 V
3W (Tc)
-
STU27N3LH5
MOSFET N-CH 30V 27A IPAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-251-3 Short Leads, IPak, TO-251AA
TO-251 (IPAK)
30 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
STripFET™ V
-
27A (Tc)
1V @ 250µA
4.5V, 10V
20mOhm @ 13.5A, 10V
4.6 nC @ 5 V
±22V
475 pF @ 25 V
30W (Tc)
-
STL9N3LLH5
MOSFET N-CH 30V 9A POWERFLAT
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-PowerVDFN
PowerFlat™ (3.3x3.3)
30 V
-55°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
STripFET™ V
-
9A (Tc)
2.5V @ 250µA
4.5V, 10V
19mOhm @ 4.5A, 10V
5 nC @ 4.5 V
±22V
724 pF @ 25 V
2W (Ta), 50W (Tc)
-
STP60N3LH5
MOSFET N-CH 30V 48A TO220AB
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
TO-220
30 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
STripFET™ V
-
48A (Tc)
3V @ 250µA
5V, 10V
8.4mOhm @ 24A, 10V
8.8 nC @ 5 V
±20V
1350 pF @ 25 V
60W (Tc)
-
STD55N4F5
MOSFET N-CH 40V 55A DPAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
40 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
STripFET™ V
-
55A (Tc)
4V @ 250µA
10V
8.5mOhm @ 27.5A, 10V
25 nC @ 10 V
±20V
1600 pF @ 25 V
60W (Tc)
-
STP95N2LH5
MOSFET N-CH 25V 80A TO220AB
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
TO-220
25 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
STripFET™ V
-
80A (Tc)
1V @ 250µA
5V, 10V
4.9mOhm @ 40A, 10V
13.4 nC @ 5 V
±22V
1817 pF @ 25 V
80W (Tc)
-
STD27N3LH5
MOSFET N-CH 30V 27A DPAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
30 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
STripFET™ V
-
27A (Tc)
1V @ 250µA
4.5V, 10V
19mOhm @ 13.5A, 10V
4.6 nC @ 5 V
±22V
475 pF @ 25 V
30W (Tc)
-
STU65N3LLH5
MOSFET N CH 30V 65A IPAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-251-3 Short Leads, IPak, TO-251AA
I-PAK
30 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
STripFET™ V
-
65A (Tc)
3V @ 250µA
4.5V, 10V
7.3mOhm @ 32.5A, 10V
8 nC @ 4.5 V
±22V
1290 pF @ 25 V
50W (Tc)
-
STL56N3LLH5
MOSFET N-CH 30V 56A POWERFLAT
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-PowerVDFN
PowerFlat™ (5x6)
30 V
-55°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
STripFET™ V
-
56A (Tc)
1V @ 250µA
4.5V, 10V
9mOhm @ 7.5A, 10V
6.5 nC @ 4.5 V
+22V, -20V
950 pF @ 25 V
62.5W (Tc)
-
STD86N3LH5
MOSFET N-CH 30V 80A DPAK
1+
$3.8028
5+
$3.5915
10+
$3.3803
Quantity
198,796 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
30 V
175°C (TJ)
Automotive
MOSFET (Metal Oxide)
STripFET™ V
-
80A (Tc)
2.5V @ 250µA
5V, 10V
5mOhm @ 40A, 10V
14 nC @ 5 V
±20V
1850 pF @ 25 V
70W (Tc)
AEC-Q101
STL10N3LLH5
MOSFET N-CH 30V 9A POWERFLAT
1+
$2.0282
5+
$1.9155
10+
$1.8028
Quantity
2,573 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-PowerVDFN
PowerFlat™ (3.3x3.3)
30 V
-55°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
STripFET™ V
-
9A (Tc)
2.5V @ 250µA
4.5V, 10V
19mOhm @ 4.5A, 10V
6 nC @ 4.5 V
±22V
900 pF @ 25 V
2W (Ta), 50W (Tc)
-
STL70N4LLF5
MOSFET N-CH 40V 70A POWERFLAT
1+
$3.8028
5+
$3.5915
10+
$3.3803
Quantity
6,614 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount, Wettable Flank
N-Channel
8-PowerVDFN
PowerFlat™ (5x6)
40 V
-55°C ~ 175°C (TJ)
Automotive
MOSFET (Metal Oxide)
STripFET™ V
-
70A (Tc)
1V @ 250µA
4.5V, 10V
6.5mOhm @ 9A, 10V
13 nC @ 4.5 V
±22V
1800 pF @ 25 V
72W (Tc)
AEC-Q101
STL100N1VH5
MOSFET N-CH 12V 100A POWERFLAT
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-PowerVDFN
PowerFlat™ (5x6)
12 V
-55°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
STripFET™ V
-
100A (Tc)
500mV @ 250µA (Min)
2.5V, 4.5V
3mOhm @ 12.5A, 4.5V
26.5 nC @ 4.5 V
±8V
2085 pF @ 10 V
60W (Tc)
-
STS10N3LH5
MOSFET N-CH 30V 10A 8SO
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-SOIC (0.154", 3.90mm Width)
8-SOIC
30 V
-55°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
STripFET™ V
-
10A (Tc)
1V @ 250µA
4.5V, 10V
21mOhm @ 5A, 10V
4.6 nC @ 5 V
±22V
475 pF @ 25 V
2.5W (Tc)
-
STL75N3LLZH5
MOSFET N-CH 30V 75A POWERFLAT
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-PowerVDFN
PowerFlat™ (5x6)
30 V
-55°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
STripFET™ V
-
75A (Tc)
1V @ 250µA
4.5V, 10V
6.1mOhm @ 9.5A, 10V
11.8 nC @ 4.5 V
±18V
1510 pF @ 25 V
60W (Tc)
-
STL150N3LLH5
MOSFET N-CH 30V 195A POWERFLAT
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-PowerVDFN
PowerFlat™ (5x6)
30 V
-55°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
STripFET™ V
-
195A (Tc)
2.2V @ 250µA
4.5V, 10V
1.75mOhm @ 17.5A, 10V
40 nC @ 4.5 V
±22V
5800 pF @ 25 V
114W (Tc)
-
STP85N3LH5
MOSFET N-CH 30V 80A TO220AB
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
TO-220
30 V
175°C (TJ)
-
MOSFET (Metal Oxide)
STripFET™ V
-
80A (Tc)
2.5V @ 250µA
5V, 10V
5.4mOhm @ 40A, 10V
14 nC @ 5 V
±22V
1850 pF @ 25 V
70W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.