STripFET™ V Series, Single FETs, MOSFETs

Results:
46
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Supplier Device Package
Package / Case
Vgs(th) (Max) @ Id
Vgs (Max)
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
Operating Temperature
Mounting Type
Grade
Qualification
FET Feature
FET Type
Technology
Results remaining46
Applied Filters:
STripFET™ V
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypePackage / CaseGradeTechnologySeriesFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Supplier Device PackageQualification
STL16N1VH5
MOSFET N-CH 12V 16A POWERFLAT
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
8-PowerVDFN
-
MOSFET (Metal Oxide)
STripFET™ V
-
16A (Tc)
500mV @ 250µA (Min)
12 V
2.5V, 4.5V
3mOhm @ 8A, 4.5V
26.5 nC @ 4.5 V
±8V
2085 pF @ 12 V
2W (Ta), 50W (Tc)
PowerFlat™ (3.3x3.3)
-
STS12N3LLH5
MOSFET N-CH 30V 12A 8SO
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
8-SOIC (0.154", 3.90mm Width)
-
MOSFET (Metal Oxide)
STripFET™ V
-
12A (Tc)
1V @ 250µA
30 V
4.5V, 10V
7.5mOhm @ 6A, 10V
8 nC @ 4.5 V
+22V, -20V
1290 pF @ 25 V
2.7W (Tc)
8-SOIC
-
STD65N3LLH5
MOSFET N CH 30V 65A DPAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
MOSFET (Metal Oxide)
STripFET™ V
-
65A (Tc)
3V @ 250µA
30 V
4.5V, 10V
6.9mOhm @ 32.5A, 10V
8 nC @ 4.5 V
±22V
1290 pF @ 25 V
50W (Tc)
DPAK
-
STS11N3LLH5
MOSFET N-CH 30V 11A 8SO
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
8-SOIC (0.154", 3.90mm Width)
-
MOSFET (Metal Oxide)
STripFET™ V
-
11A (Tc)
1V @ 250µA
30 V
4.5V, 10V
14mOhm @ 5.5A, 10V
5 nC @ 4.5 V
+22V, -20V
724 pF @ 25 V
2.7W (Tc)
8-SOIC
-
STD85N3LH5
MOSFET N-CH 30V 80A DPAK
1+
$2.5352
5+
$2.3944
10+
$2.2535
Quantity
40,014 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
175°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
MOSFET (Metal Oxide)
STripFET™ V
-
80A (Tc)
2.5V @ 250µA
30 V
5V, 10V
5mOhm @ 40A, 10V
14 nC @ 5 V
±22V
1850 pF @ 25 V
70W (Tc)
DPAK
-
STU60N3LH5
MOSFET N-CH 30V 48A IPAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
N-Channel
TO-251-3 Short Leads, IPak, TO-251AA
-
MOSFET (Metal Oxide)
STripFET™ V
-
48A (Tc)
3V @ 250µA
30 V
5V, 10V
8.4mOhm @ 24A, 10V
8.8 nC @ 5 V
±20V
1620 pF @ 25 V
60W (Tc)
I-PAK
-
STD60N3LH5
MOSFET N-CH 30V 48A DPAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
MOSFET (Metal Oxide)
STripFET™ V
-
48A (Tc)
3V @ 250µA
30 V
5V, 10V
8mOhm @ 24A, 10V
8.8 nC @ 5 V
±20V
1350 pF @ 25 V
60W (Tc)
DPAK
-
STT5N2VH5
MOSFET N-CH 20V SOT23-6
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
SOT-23-6
-
MOSFET (Metal Oxide)
STripFET™ V
-
5A (Tj)
700mV @ 250µA (Min)
20 V
2.5V, 4.5V
30mOhm @ 2A, 4.5V
4.6 nC @ 4.5 V
±8V
367 pF @ 16 V
1.6W (Tc)
SOT-23-6
-
STS14N3LLH5
MOSFET N-CH 30V 14A 8SO
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
8-SOIC (0.154", 3.90mm Width)
-
MOSFET (Metal Oxide)
STripFET™ V
-
14A (Tc)
1V @ 250µA
30 V
4.5V, 10V
6mOhm @ 7A, 10V
12 nC @ 4.5 V
±22V
1500 pF @ 25 V
2.7W (Tc)
8-SOIC
-
STL6N2VH5
MOSFET N-CH 20V POWERFLAT
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
6-PowerWDFN
-
MOSFET (Metal Oxide)
STripFET™ V
-
6A (Tj)
700mV @ 250µA (Min)
20 V
2.5V, 4.5V
30mOhm @ 3A, 4.5V
6 nC @ 4.5 V
±8V
550 pF @ 16 V
2.4W (Tc)
PowerFlat™ (2x2)
-
STL65N3LLH5
MOSFET N-CH 30V 65A POWERFLAT
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
8-PowerVDFN
-
MOSFET (Metal Oxide)
STripFET™ V
-
65A (Tc)
1V @ 250µA
30 V
4.5V, 10V
5.8mOhm @ 9.5A, 10V
12 nC @ 4.5 V
±22V
1500 pF @ 25 V
60W (Tc)
PowerFlat™ (5x6)
-
STL120N2VH5
MOSFET N-CH 20V 120A POWERFLAT
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
8-PowerVDFN
-
MOSFET (Metal Oxide)
STripFET™ V
-
120A (Tc)
700mV @ 250µA (Min)
20 V
2.5V, 4.5V
3mOhm @ 14A, 4.5V
29 nC @ 2.5 V
±8V
4660 pF @ 15 V
80W (Tc)
PowerFlat™ (5x6)
-
STL12N3LLH5
MOSFET N-CH 30V 12A POWERFLAT
1+
$0.6338
5+
$0.5986
10+
$0.5634
Quantity
20,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
8-PowerVDFN
-
MOSFET (Metal Oxide)
STripFET™ V
-
12A (Tc)
2.5V @ 250µA
30 V
4.5V, 10V
9mOhm @ 6A, 10V
12 nC @ 4.5 V
±22V
1500 pF @ 25 V
2W (Ta), 50W (Tc)
PowerFlat™ (3.3x3.3)
-
STS13N3LLH5
MOSFET N-CH 30V 13A 8SO
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
8-SOIC (0.154", 3.90mm Width)
-
MOSFET (Metal Oxide)
STripFET™ V
-
13A (Tc)
1V @ 250µA
30 V
4.5V, 10V
6.6mOhm @ 6.5A, 10V
12 nC @ 4.5 V
+22V, -20V
1500 pF @ 25 V
2.7W (Tc)
8-SOIC
-
STL140N4LLF5
MOSFET N-CH 40V 140A POWERFLAT
1+
$2.9155
5+
$2.7535
10+
$2.5915
Quantity
6,996 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
8-PowerVDFN
-
MOSFET (Metal Oxide)
STripFET™ V
-
140A (Tc)
1V @ 250µA
40 V
4.5V, 10V
2.75mOhm @ 16A, 10V
45 nC @ 4.5 V
±22V
5900 pF @ 25 V
80W (Tc)
PowerFlat™ (5x6)
-
STL66N3LLH5
MOSFET N-CH 30V 80A POWERFLAT
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount, Wettable Flank
-55°C ~ 175°C (TJ)
N-Channel
8-PowerVDFN
Automotive
MOSFET (Metal Oxide)
STripFET™ V
-
80A (Tc)
3V @ 250µA
30 V
4.5V, 10V
5.8mOhm @ 10.5A, 10V
12 nC @ 4.5 V
±22V
1500 pF @ 25 V
72W (Tc)
PowerFlat™ (5x6)
AEC-Q101
STD35N3LH5
MOSFET N-CH 30V 35A DPAK
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
MOSFET (Metal Oxide)
STripFET™ V
-
35A (Tc)
2.5V @ 250µA
30 V
4.5V, 10V
16mOhm @ 15A, 10V
6 nC @ 4.5 V
±20V
725 pF @ 25 V
35W (Tc)
DPAK
-
STL60N3LLH5
MOSFET N-CH 30V 60A POWERFLAT
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
8-PowerVDFN
-
MOSFET (Metal Oxide)
STripFET™ V
-
60A (Tc)
1V @ 250µA
30 V
4.5V, 10V
7.1mOhm @ 8.5A, 10V
8 nC @ 4.5 V
±22V
1290 pF @ 25 V
60W (Tc)
PowerFlat™ (5x6)
-
STU85N3LH5
MOSFET N-CH 30V 80A IPAK
1+
$2.5352
5+
$2.3944
10+
$2.2535
Quantity
9,847 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
175°C (TJ)
N-Channel
TO-251-3 Short Leads, IPak, TO-251AA
-
MOSFET (Metal Oxide)
STripFET™ V
-
80A (Tc)
2.5V @ 250µA
30 V
5V, 10V
5.4mOhm @ 40A, 10V
14 nC @ 5 V
±22V
1850 pF @ 25 V
70W (Tc)
TO-251 (IPAK)
-
STP27N3LH5
MOSFET N-CH 30V 27A TO220AB
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
N-Channel
TO-220-3
-
MOSFET (Metal Oxide)
STripFET™ V
-
27A (Tc)
2.5V @ 250µA
30 V
4.5V, 10V
20mOhm @ 13.5A, 10V
4.6 nC @ 5 V
±22V
475 pF @ 25 V
45W (Tc)
TO-220
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.