SRFET™ Series, Single FETs, MOSFETs

Results:
28
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Vgs(th) (Max) @ Id
Package / Case
Supplier Device Package
Operating Temperature
FET Feature
Vgs (Max)
FET Type
Grade
Mounting Type
Drain to Source Voltage (Vdss)
Qualification
Technology
Drive Voltage (Max Rds On, Min Rds On)
Results remaining28
Applied Filters:
SRFET™
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperaturePackage / CaseSupplier Device PackageFET TypeDrain to Source Voltage (Vdss)GradeTechnologySeriesCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsFET FeaturePower Dissipation (Max)Qualification
AO4708
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-SOIC (0.154", 3.90mm Width)
8-SOIC
N-Channel
30 V
-
MOSFET (Metal Oxide)
SRFET™
15A (Ta)
2.4V @ 250µA
4.5V, 10V
8.7mOhm @ 15A, 10V
52 nC @ 10 V
±12V
3360 pF @ 15 V
Schottky Diode (Body)
3.1W (Ta)
-
AO4712
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-SOIC (0.154", 3.90mm Width)
8-SOIC
N-Channel
30 V
-
MOSFET (Metal Oxide)
SRFET™
13A (Ta)
2.4V @ 250µA
4.5V, 10V
14.5mOhm @ 11.2A, 10V
31 nC @ 10 V
±12V
1885 pF @ 15 V
Schottky Diode (Body)
3.1W (Ta)
-
AO4714
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-SOIC (0.154", 3.90mm Width)
8-SOIC
N-Channel
30 V
-
MOSFET (Metal Oxide)
SRFET™
20A (Ta)
2.2V @ 250µA
4.5V, 10V
4.7mOhm @ 20A, 10V
74 nC @ 10 V
±20V
4512 pF @ 15 V
Schottky Diode (Body)
3W (Ta)
-
AOL1700
MOSFET N-CH 30V 17A/85A ULTRASO8
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
3-PowerSMD, Flat Leads
UltraSO-8™
N-Channel
30 V
-
MOSFET (Metal Oxide)
SRFET™
17A (Ta), 85A (Tc)
2.2V @ 250µA
4.5V, 10V
4.2mOhm @ 20A, 10V
74 nC @ 10 V
±20V
4512 pF @ 15 V
Schottky Diode (Body)
2.1W (Ta), 100W (Tc)
-
AON7702
MOSFET N-CH 30V 13.5A/36A 8DFN
1+
$0.7606
5+
$0.7183
10+
$0.6761
Quantity
10,744 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-PowerVDFN
8-DFN-EP (3x3)
N-Channel
30 V
-
MOSFET (Metal Oxide)
SRFET™
13.5A (Ta), 36A (Tc)
3V @ 250µA
4.5V, 10V
10mOhm @ 13.5A, 10V
48 nC @ 10 V
±20V
4250 pF @ 15 V
Schottky Diode (Body)
3.1W (Ta), 23W (Tc)
-
AON7700
MOSFET N-CH 30V 16A/40A 8DFN
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-PowerVDFN
8-DFN-EP (3x3)
N-Channel
30 V
-
MOSFET (Metal Oxide)
SRFET™
16A (Ta), 40A (Tc)
3V @ 250µA
4.5V, 10V
8.5mOhm @ 12A, 10V
33 nC @ 4.5 V
±12V
4250 pF @ 15 V
Schottky Diode (Body)
3.1W (Ta), 26W (Tc)
-
AON6792
MOSFET N-CH 30V 44A/85A 8DFN
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-PowerSMD, Flat Leads
8-DFN (5x6)
N-Channel
30 V
-
MOSFET (Metal Oxide)
SRFET™
44A (Ta), 85A (Tc)
1.9V @ 250µA
4.5V, 10V
2mOhm @ 20A, 10V
49 nC @ 10 V
±12V
3110 pF @ 15 V
-
6.2W (Ta), 48W (Tc)
-
AON6796
MOSFET N-CH 30V 32A/70A 8DFN
1+
$0.5070
5+
$0.4789
10+
$0.4507
Quantity
42,535 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-PowerSMD, Flat Leads
8-DFN (5x6)
N-Channel
30 V
-
MOSFET (Metal Oxide)
SRFET™
32A (Ta), 70A (Tc)
1.9V @ 250µA
4.5V, 10V
3.9mOhm @ 20A, 10V
23 nC @ 10 V
±12V
1350 pF @ 15 V
-
6.2W (Ta), 31W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.