SRFET™ Series, Single FETs, MOSFETs

Results:
28
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Vgs(th) (Max) @ Id
Package / Case
Supplier Device Package
Operating Temperature
FET Feature
Vgs (Max)
FET Type
Grade
Mounting Type
Drain to Source Voltage (Vdss)
Qualification
Technology
Drive Voltage (Max Rds On, Min Rds On)
Results remaining28
Applied Filters:
SRFET™
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypeDrain to Source Voltage (Vdss)Package / CaseTechnologySeriesVgs(th) (Max) @ IdSupplier Device PackageCurrent - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsFET FeaturePower Dissipation (Max)
AON6718L_101
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
30 V
8-DFN
MOSFET (Metal Oxide)
SRFET™
2.2V @ 250µA
8-DFN (5x6)
18A (Ta), 80A (Tc)
4.5V, 10V
3.7mOhm @ 20A, 10V
72 nC @ 10 V
±20V
4463 pF @ 15 V
Schottky Diode (Body)
2.1W (Ta), 83W (Tc)
AON6786_001
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
30 V
8-PowerSMD, Flat Leads
MOSFET (Metal Oxide)
SRFET™
2V @ 250µA
8-DFN (5x6)
24A (Ta), 85A (Tc)
4.5V, 10V
2.4mOhm @ 20A, 10V
51 nC @ 10 V
±12V
6780 pF @ 15 V
Schottky Diode (Body)
2.5W (Ta), 83W (Tc)
AON7702A_101
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 155°C (TJ)
N-Channel
30 V
8-PowerVDFN
MOSFET (Metal Oxide)
SRFET™
2.1V @ 250µA
8-DFN-EP (3x3)
13.5A (Ta), 36A (Tc)
4.5V, 10V
10mOhm @ 13A, 10V
24 nC @ 10 V
±12V
1400 pF @ 15 V
Schottky Diode (Body)
3.1W (Ta), 23W (Tc)
AO4726
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
30 V
8-SOIC (0.154", 3.90mm Width)
MOSFET (Metal Oxide)
SRFET™
2.1V @ 250µA
8-SOIC
20A (Ta)
4.5V, 10V
4.5mOhm @ 20A, 10V
73 nC @ 10 V
±12V
3800 pF @ 15 V
Schottky Diode (Body)
1.7W (Ta)
AO4728
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
30 V
8-SOIC (0.154", 3.90mm Width)
MOSFET (Metal Oxide)
SRFET™
2.2V @ 250µA
8-SOIC
20A (Tc)
4.5V, 10V
4.3mOhm @ 20A, 10V
72 nC @ 10 V
±20V
4463 pF @ 15 V
Schottky Diode (Body)
3.1W (Ta)
AON7784
MOSFET N-CH 30V 31A/50A 8DFN
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
30 V
8-PowerWDFN
MOSFET (Metal Oxide)
SRFET™
2.1V @ 250µA
8-DFN-EP (3.3x3.3)
31A (Ta), 50A (Tc)
4.5V, 10V
3.5mOhm @ 20A, 10V
34 nC @ 10 V
±12V
4600 pF @ 15 V
Schottky Diode (Body)
6.2W (Ta), 83W (Tc)
AON7788
MOSFET N-CH 30V 20A/40A 8DFN
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
30 V
8-PowerVDFN
MOSFET (Metal Oxide)
SRFET™
2V @ 250µA
8-DFN-EP (3x3)
20A (Ta), 40A (Tc)
4.5V, 10V
4.5mOhm @ 20A, 10V
29 nC @ 10 V
±12V
4100 pF @ 15 V
Schottky Diode (Body)
3.1W (Ta), 36W (Tc)
AO4718
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
30 V
8-SOIC (0.154", 3.90mm Width)
MOSFET (Metal Oxide)
SRFET™
2.5V @ 250µA
8-SOIC
15A (Ta)
4.5V, 10V
9mOhm @ 15A, 10V
32 nC @ 10 V
±20V
1950 pF @ 15 V
Schottky Diode (Body)
3.1W (Ta)
AO4720
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
30 V
8-SOIC (0.154", 3.90mm Width)
MOSFET (Metal Oxide)
SRFET™
2V @ 250µA
8-SOIC
13A (Ta)
4.5V, 10V
11mOhm @ 13A, 10V
30 nC @ 10 V
±20V
1600 pF @ 15 V
Schottky Diode (Body)
3.1W (Ta)
AO4722
MOSFET N-CH 30V 8.5A 8SOIC
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
30 V
8-SOIC (0.154", 3.90mm Width)
MOSFET (Metal Oxide)
SRFET™
2.5V @ 250µA
8-SOIC
8.5A (Ta)
4.5V, 10V
14mOhm @ 11.6A, 10V
20 nC @ 10 V
±20V
1100 pF @ 15 V
Schottky Diode (Body)
1.7W (Ta)
AO4724
MOSFET N-CH 30V 7.7A 8SOIC
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
30 V
8-SOIC (0.154", 3.90mm Width)
MOSFET (Metal Oxide)
SRFET™
2V @ 250µA
8-SOIC
7.7A (Ta)
4.5V, 10V
17.5mOhm @ 10.5A, 10V
16 nC @ 10 V
±20V
900 pF @ 15 V
Schottky Diode (Body)
1.7W (Ta)
AOD492
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
30 V
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET (Metal Oxide)
SRFET™
2.2V @ 250µA
TO-252 (DPAK)
85A (Tc)
4.5V, 10V
4.4mOhm @ 20A, 10V
74 nC @ 10 V
±20V
4512 pF @ 15 V
Schottky Diode (Body)
2.5W (Ta), 100W (Tc)
AON7702B
MOSFET N-CH 30V 13.5A/20A 8DFN
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
30 V
8-PowerVDFN
MOSFET (Metal Oxide)
SRFET™
2.5V @ 250µA
8-DFN-EP (3x3)
13.5A (Ta), 20A (Tc)
4.5V, 10V
9.5mOhm @ 13.5A, 10V
24 nC @ 10 V
±20V
810 pF @ 15 V
Schottky Diode (Body)
3.1W (Ta), 23W (Tc)
AOL1712
MOSFET N-CH 30V 16A/65A ULTRASO8
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
30 V
3-PowerSMD, Flat Leads
MOSFET (Metal Oxide)
SRFET™
2.5V @ 250µA
UltraSO-8™
16A (Ta), 65A (Tc)
4.5V, 10V
4.2mOhm @ 20A, 10V
95 nC @ 10 V
±12V
5120 pF @ 15 V
Schottky Diode (Body)
2.1W (Ta), 100W (Tc)
AON6782
MOSFET N-CH 30V 24A/85A 8DFN
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
30 V
8-PowerSMD, Flat Leads
MOSFET (Metal Oxide)
SRFET™
2V @ 250µA
8-DFN (5x6)
24A (Ta), 85A (Tc)
4.5V, 10V
2.4mOhm @ 20A, 10V
51 nC @ 10 V
±12V
6780 pF @ 15 V
Schottky Diode (Body)
2.5W (Ta), 83W (Tc)
AON6780
MOSFET N-CH 30V 30A/85A 8DFN
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
30 V
8-PowerSMD, Flat Leads
MOSFET (Metal Oxide)
SRFET™
2V @ 250µA
8-DFN (5x6)
30A (Ta), 85A (Tc)
4.5V, 10V
1.7mOhm @ 20A, 10V
76 nC @ 10 V
±12V
9600 pF @ 15 V
Schottky Diode (Body)
2.5W (Ta), 83W (Tc)
AOL1412
MOSFET N-CH 30V 17A/70A ULTRASO8
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
30 V
3-PowerSMD, Flat Leads
MOSFET (Metal Oxide)
SRFET™
2.4V @ 250µA
UltraSO-8™
17A (Ta), 70A (Tc)
4.5V, 10V
3.9mOhm @ 20A, 10V
115 nC @ 10 V
±12V
7716 pF @ 15 V
Schottky Diode (Body)
2.1W (Ta), 36W (Tc)
AO4456
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
30 V
8-SOIC (0.154", 3.90mm Width)
MOSFET (Metal Oxide)
SRFET™
2.4V @ 250µA
8-SOIC
20A (Tc)
4.5V, 10V
4.6mOhm @ 20A, 10V
95 nC @ 10 V
±12V
5185 pF @ 15 V
Schottky Diode (Body)
3.1W (Ta)
AO4706
MOSFET N-CH 30V 16.5A 8SOIC
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
30 V
8-SOIC (0.154", 3.90mm Width)
MOSFET (Metal Oxide)
SRFET™
2.4V @ 250µA
8-SOIC
16.5A (Ta)
4.5V, 10V
6.8mOhm @ 16.5A, 10V
77 nC @ 10 V
±12V
5000 pF @ 15 V
Schottky Diode (Body)
3.1W (Ta)
AO4710
MOSFET N-CH 30V 12.7A 8SOIC
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
30 V
8-SOIC (0.154", 3.90mm Width)
MOSFET (Metal Oxide)
SRFET™
2.3V @ 250µA
8-SOIC
12.7A (Ta)
4.5V, 10V
11.8mOhm @ 12.7A, 10V
43 nC @ 10 V
±12V
2376 pF @ 15 V
Schottky Diode (Body)
3.1W (Ta)

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.