LITTLE FOOT® Series, Single FETs, MOSFETs

Results:
37
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power Dissipation (Max)
Current - Continuous Drain (Id) @ 25°C
Vgs(th) (Max) @ Id
Supplier Device Package
Package / Case
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Drain to Source Voltage (Vdss)
FET Feature
FET Type
Operating Temperature
Grade
Mounting Type
Qualification
Technology
Results remaining37
Applied Filters:
LITTLE FOOT®
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperaturePackage / CaseSupplier Device PackageFET TypeDrain to Source Voltage (Vdss)GradeTechnologySeriesVgs(th) (Max) @ IdCurrent - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsFET FeaturePower Dissipation (Max)Qualification
SI4823DY-T1-GE3
MOSFET P-CH 20V 4.1A 8SO
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-SOIC (0.154", 3.90mm Width)
8-SOIC
P-Channel
20 V
-
MOSFET (Metal Oxide)
LITTLE FOOT®
1.5V @ 250µA
4.1A (Tc)
2.5V, 4.5V
108mOhm @ 3.3A, 4.5V
12 nC @ 10 V
±12V
660 pF @ 10 V
Schottky Diode (Isolated)
1.7W (Ta), 2.8W (Tc)
-
SI4812BDY-T1-GE3
MOSFET N-CH 30V 7.3A 8SO
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-SOIC (0.154", 3.90mm Width)
8-SOIC
N-Channel
30 V
-
MOSFET (Metal Oxide)
LITTLE FOOT®
3V @ 250µA
7.3A (Ta)
4.5V, 10V
16mOhm @ 9.5A, 10V
13 nC @ 5 V
±20V
-
-
1.4W (Ta)
-
SI5853DDC-T1-E3
MOSFET P-CH 20V 4A 1206-8
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-SMD, Flat Lead
1206-8 ChipFET™
P-Channel
20 V
-
MOSFET (Metal Oxide)
LITTLE FOOT®
1V @ 250µA
4A (Tc)
1.8V, 4.5V
105mOhm @ 2.9A, 4.5V
12 nC @ 8 V
±8V
320 pF @ 10 V
Schottky Diode (Isolated)
1.3W (Ta), 3.1W (Tc)
-
SI5913DC-T1-GE3
MOSFET P-CH 20V 4A 1206-8
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-SMD, Flat Lead
1206-8 ChipFET™
P-Channel
20 V
-
MOSFET (Metal Oxide)
LITTLE FOOT®
1.5V @ 250µA
4A (Tc)
2.5V, 10V
84mOhm @ 3.7A, 10V
12 nC @ 10 V
±12V
330 pF @ 10 V
Schottky Diode (Isolated)
1.7W (Ta), 3.1W (Tc)
-
SIA817EDJ-T1-GE3
MOSFET P-CH 30V 4.5A PPAK SC70-6
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
PowerPAK® SC-70-6 Dual
PowerPAK® SC-70-6 Dual
P-Channel
30 V
-
MOSFET (Metal Oxide)
LITTLE FOOT®
1.3V @ 250µA
4.5A (Tc)
2.5V, 10V
65mOhm @ 3A, 10V
23 nC @ 10 V
±12V
600 pF @ 15 V
Schottky Diode (Isolated)
1.9W (Ta), 6.5W (Tc)
-
SI4823DY-T1-E3
MOSFET P-CH 20V 4.1A 8SO
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-SOIC (0.154", 3.90mm Width)
8-SOIC
P-Channel
20 V
-
MOSFET (Metal Oxide)
LITTLE FOOT®
1.5V @ 250µA
4.1A (Tc)
2.5V, 4.5V
108mOhm @ 3.3A, 4.5V
12 nC @ 10 V
±12V
660 pF @ 10 V
Schottky Diode (Isolated)
1.7W (Ta), 2.8W (Tc)
-
SI4831BDY-T1-E3
MOSFET P-CH 30V 6.6A 8SO
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-SOIC (0.154", 3.90mm Width)
8-SOIC
P-Channel
30 V
-
MOSFET (Metal Oxide)
LITTLE FOOT®
3V @ 250µA
6.6A (Tc)
4.5V, 10V
42mOhm @ 5A, 10V
26 nC @ 10 V
±20V
625 pF @ 15 V
Schottky Diode (Isolated)
2W (Ta), 3.3W (Tc)
-
SI4831BDY-T1-GE3
MOSFET P-CH 30V 6.6A 8SO
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-SOIC (0.154", 3.90mm Width)
8-SOIC
P-Channel
30 V
-
MOSFET (Metal Oxide)
LITTLE FOOT®
3V @ 250µA
6.6A (Tc)
4.5V, 10V
42mOhm @ 5A, 10V
26 nC @ 10 V
±20V
625 pF @ 15 V
Schottky Diode (Isolated)
2W (Ta), 3.3W (Tc)
-
SI5853CDC-T1-E3
MOSFET P-CH 20V 4A 1206-8
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-SMD, Flat Lead
1206-8 ChipFET™
P-Channel
20 V
-
MOSFET (Metal Oxide)
LITTLE FOOT®
1V @ 250µA
4A (Tc)
1.8V, 4.5V
104mOhm @ 2.5A, 4.5V
11 nC @ 8 V
±8V
350 pF @ 10 V
Schottky Diode (Isolated)
1.5W (Ta), 3.1W (Tc)
-
SI5857DU-T1-GE3
MOSFET P-CH 20V 6A PPAK CHIPFET
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
PowerPAK® ChipFET™ Single
PowerPAK® ChipFET™ Single
P-Channel
20 V
-
MOSFET (Metal Oxide)
LITTLE FOOT®
1.5V @ 250µA
6A (Tc)
2.5V, 4.5V
58mOhm @ 3.6A, 4.5V
17 nC @ 10 V
±12V
480 pF @ 10 V
Schottky Diode (Isolated)
2.3W (Ta), 10.4W (Tc)
-
SI3812DV-T1-GE3
MOSFET N-CH 20V 2A 6TSOP
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
SOT-23-6 Thin, TSOT-23-6
6-TSOP
N-Channel
20 V
-
MOSFET (Metal Oxide)
LITTLE FOOT®
600mV @ 250µA (Min)
2A (Ta)
2.5V, 4.5V
125mOhm @ 2.4A, 4.5V
4 nC @ 4.5 V
±12V
-
Schottky Diode (Isolated)
830mW (Ta)
-
SI3879DV-T1-E3
MOSFET P-CH 20V 5A 6TSOP
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
SOT-23-6 Thin, TSOT-23-6
6-TSOP
P-Channel
20 V
-
MOSFET (Metal Oxide)
LITTLE FOOT®
1.5V @ 250µA
5A (Tc)
2.5V, 4.5V
70mOhm @ 3.5A, 4.5V
14.5 nC @ 10 V
±12V
480 pF @ 10 V
-
2W (Ta), 3.3W (Tc)
-
SIA810DJ-T1-GE3
MOSFET N-CH 20V 4.5A PPAK SC70-6
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
PowerPAK® SC-70-6 Dual
PowerPAK® SC-70-6 Dual
N-Channel
20 V
-
MOSFET (Metal Oxide)
LITTLE FOOT®
1V @ 250µA
4.5A (Tc)
1.8V, 4.5V
53mOhm @ 3.7A, 4.5V
11.5 nC @ 8 V
±8V
400 pF @ 10 V
Schottky Diode (Isolated)
1.9W (Ta), 6.5W (Tc)
-
SIA811DJ-T1-GE3
MOSFET P-CH 20V 4.5A PPAK SC70-6
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
PowerPAK® SC-70-6 Dual
PowerPAK® SC-70-6 Dual
P-Channel
20 V
-
MOSFET (Metal Oxide)
LITTLE FOOT®
1V @ 250µA
4.5A (Tc)
1.8V, 4.5V
94mOhm @ 2.8A, 4.5V
13 nC @ 8 V
±8V
355 pF @ 10 V
Schottky Diode (Isolated)
1.9W (Ta), 6.5W (Tc)
-
SIA813DJ-T1-GE3
MOSFET P-CH 20V 4.5A PPAK SC70-6
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
PowerPAK® SC-70-6 Dual
PowerPAK® SC-70-6 Dual
P-Channel
20 V
-
MOSFET (Metal Oxide)
LITTLE FOOT®
1V @ 250µA
4.5A (Tc)
1.8V, 4.5V
94mOhm @ 2.8A, 4.5V
13 nC @ 8 V
±8V
355 pF @ 10 V
Schottky Diode (Isolated)
1.9W (Ta), 6.5W (Tc)
-
SIA814DJ-T1-GE3
MOSFET N-CH 30V 4.5A PPAK SC70-6
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
PowerPAK® SC-70-6 Dual
PowerPAK® SC-70-6 Dual
N-Channel
30 V
-
MOSFET (Metal Oxide)
LITTLE FOOT®
1.5V @ 250µA
4.5A (Tc)
2.5V, 10V
61mOhm @ 3.3A, 10V
11 nC @ 10 V
±12V
340 pF @ 10 V
Schottky Diode (Isolated)
1.9W (Ta), 6.5W (Tc)
-
SIB800EDK-T1-GE3
MOSFET N-CH 20V 1.5A PPAK SC75-6
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
PowerPAK® SC-75-6
PowerPAK® SC-75-6
N-Channel
20 V
-
MOSFET (Metal Oxide)
LITTLE FOOT®
1V @ 250µA
1.5A (Tc)
1.5V, 4.5V
225mOhm @ 1.6A, 4.5V
1.7 nC @ 4.5 V
±6V
-
Schottky Diode (Isolated)
1.1W (Ta), 3.1W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.