AlphaMOS Series, Single FETs, MOSFETs

Results:
69
Manufacturer
Series
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Gate Charge (Qg) (Max) @ Vgs
Vgs(th) (Max) @ Id
Package / Case
Supplier Device Package
Drain to Source Voltage (Vdss)
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Operating Temperature
FET Type
FET Feature
Mounting Type
Technology
Grade
Qualification
Results remaining69
Applied Filters:
AlphaMOS
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypePackage / CaseDrain to Source Voltage (Vdss)GradeSupplier Device PackageTechnologySeriesFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
AON7566
MOSFET N-CHANNEL 30V 34A 8DFN
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
8-PowerVDFN
30 V
-
8-DFN-EP (3x3)
MOSFET (Metal Oxide)
AlphaMOS
-
34A (Tc)
2.4V @ 250µA
4.5V, 10V
3.7mOhm @ 20A, 10V
80 nC @ 10 V
±20V
3020 pF @ 15 V
30W (Tc)
-
AOD538
MOSFET N-CH 30V 34A/70A TO252
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
30 V
-
TO-252 (DPAK)
MOSFET (Metal Oxide)
AlphaMOS
-
34A (Ta), 70A (Tc)
2.2V @ 250µA
4.5V, 10V
3.1mOhm @ 20A, 10V
42 nC @ 10 V
±20V
2160 pF @ 15 V
4.2W (Ta), 24W (Tc)
-
AONR34332C
MOSFET N-CH 30V 48A/50A 8DFN
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
8-PowerWDFN
30 V
-
8-DFN-EP (3.3x3.3)
MOSFET (Metal Oxide)
AlphaMOS
-
48A (Ta), 50A (Tc)
1.2V @ 250µA
2.5V, 10V
1.8mOhm @ 20A, 10V
105 nC @ 10 V
±12V
4175 pF @ 15 V
6.2W (Ta), 83.3W (Tc)
-
AOI538
MOSFET N-CH 30V 34A/70A TO251A
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
N-Channel
TO-251-3 Stub Leads, IPak
30 V
-
TO-251A
MOSFET (Metal Oxide)
AlphaMOS
-
34A (Ta), 70A (Tc)
2.2V @ 250µA
4.5V, 10V
3.1mOhm @ 20A, 10V
42 nC @ 10 V
±20V
2160 pF @ 15 V
4.2W (Ta), 24W (Tc)
-
AON6366E
MOSFET N-CHANNEL 30V 34A 8DFN
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
8-PowerSMD, Flat Leads
30 V
-
8-DFN (5x6)
MOSFET (Metal Oxide)
AlphaMOS
-
34A (Tc)
2.4V @ 250µA
4.5V, 10V
3.7mOhm @ 20A, 10V
80 nC @ 10 V
±20V
3020 pF @ 15 V
46W (Tc)
-
AON6548
MOSFET N-CH 30V 52A/85A 8DFN
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
8-PowerSMD, Flat Leads
30 V
-
8-DFN (5x6)
MOSFET (Metal Oxide)
AlphaMOS
-
52A (Ta), 85A (Tc)
2.2V @ 250µA
4.5V, 10V
1.8mOhm @ 20A, 10V
90 nC @ 10 V
±20V
4290 pF @ 15 V
7.4W (Ta), 83W (Tc)
-
AON7442
MOSFET N-CHANNEL 30V 50A 8DFN
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
8-PowerWDFN
30 V
-
8-DFN-EP (3.3x3.3)
MOSFET (Metal Oxide)
AlphaMOS
-
50A (Tc)
2.2V @ 250µA
4.5V, 10V
1.9mOhm @ 20A, 10V
65 nC @ 10 V
±20V
2994 pF @ 15 V
83W (Tc)
-
AON7510
MOSFET N-CH 30V 45A/75A 8DFN
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
8-PowerWDFN
30 V
-
8-DFN-EP (3.3x3.3)
MOSFET (Metal Oxide)
AlphaMOS
-
45A (Ta), 75A (Tc)
2V @ 250µA
4.5V, 10V
1.25mOhm @ 20A, 10V
140 nC @ 10 V
±20V
4500 pF @ 15 V
4.1W (Ta), 46W (Tc)
-
AON7292
MOSFET N-CH 100V 9A/23A 8DFN
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
8-PowerWDFN
100 V
-
8-DFN-EP (3.3x3.3)
MOSFET (Metal Oxide)
AlphaMOS
-
9A (Ta), 23A (Tc)
2.6V @ 250µA
4.5V, 10V
24mOhm @ 9A, 10V
25 nC @ 10 V
±20V
1170 pF @ 50 V
4.1W (Ta), 28W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.