AlphaMOS Series, Single FETs, MOSFETs

Results:
69
Manufacturer
Series
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Gate Charge (Qg) (Max) @ Vgs
Vgs(th) (Max) @ Id
Package / Case
Supplier Device Package
Drain to Source Voltage (Vdss)
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Operating Temperature
FET Type
FET Feature
Mounting Type
Technology
Grade
Qualification
Results remaining69
Applied Filters:
AlphaMOS
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperaturePackage / CaseFET TypeDrain to Source Voltage (Vdss)GradeTechnologySeriesFET FeatureRds On (Max) @ Id, VgsVgs(th) (Max) @ IdSupplier Device PackageCurrent - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Gate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
AON6562
MOSFET N-CH 30V 29A/32A 8DFN
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-VDFN Exposed Pad
N-Channel
30 V
-
MOSFET (Metal Oxide)
AlphaMOS
-
5mOhm @ 20A, 10V
2.4V @ 250µA
8-DFN (5x6)
29A (Ta), 32A (Tc)
4.5V, 10V
33 nC @ 10 V
±20V
1550 pF @ 15 V
6W (Ta), 25W (Tc)
-
AON6528
MOSFET N-CHANNEL 30V 30A 8DFN
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-PowerSMD, Flat Leads
N-Channel
30 V
-
MOSFET (Metal Oxide)
AlphaMOS
-
6.3mOhm @ 20A, 10V
2.2V @ 250µA
8-DFN (5x6)
30A (Tc)
4.5V, 10V
22 nC @ 10 V
±20V
1037 pF @ 15 V
25W (Tc)
-
AOD528
MOSFET N-CH 30V 17A/50A TO252
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
N-Channel
30 V
-
MOSFET (Metal Oxide)
AlphaMOS
-
5.4mOhm @ 20A, 10V
2.4V @ 250µA
TO-252 (DPAK)
17A (Ta), 50A (Tc)
-
18 nC @ 10 V
-
1400 pF @ 15 V
-
-
AOD4162
MOSFET N-CH 30V 16A/46A TO252
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
N-Channel
30 V
-
MOSFET (Metal Oxide)
AlphaMOS
-
6.5mOhm @ 20A, 10V
2.6V @ 250µA
TO-252 (DPAK)
16A (Ta), 46A (Tc)
4.5V, 10V
18 nC @ 10 V
±20V
1187 pF @ 15 V
2.5W (Ta), 50W (Tc)
-
AOD502
MOSFET N-CH 25V 15A/46A TO252
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
N-Channel
25 V
-
MOSFET (Metal Oxide)
AlphaMOS
-
8mOhm @ 20A, 10V
2.4V @ 250µA
TO-252 (DPAK)
15A (Ta), 46A (Tc)
4.5V, 10V
18 nC @ 10 V
±20V
1187 pF @ 15 V
2.5W (Ta), 50W (Tc)
-
AOD504
MOSFET N-CH 25V 18A/46A TO252
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
N-Channel
25 V
-
MOSFET (Metal Oxide)
AlphaMOS
-
5mOhm @ 20A, 10V
2.4V @ 250µA
TO-252 (DPAK)
18A (Ta), 46A (Tc)
4.5V, 10V
33 nC @ 10 V
±20V
1333 pF @ 15 V
2.5W (Ta), 50W (Tc)
-
AON6756
MOSFET N-CH 30V 47A/36A 8DFN
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-PowerSMD, Flat Leads
N-Channel
30 V
-
MOSFET (Metal Oxide)
AlphaMOS
Schottky Diode (Body)
2.4mOhm @ 20A, 10V
2.4V @ 250µA
8-DFN (5x6)
47A (Ta), 36A (Tc)
4.5V, 10V
64 nC @ 10 V
±20V
2796 pF @ 15 V
7.3W (Ta), 83W (Tc)
-
AO4752
1+
$0.7606
5+
$0.7183
10+
$0.6761
Quantity
10,938 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-SOIC (0.154", 3.90mm Width)
N-Channel
30 V
-
MOSFET (Metal Oxide)
AlphaMOS
Schottky Diode (Body)
8.8mOhm @ 15A, 10V
2.5V @ 250µA
8-SOIC
15A (Ta)
4.5V, 10V
15 nC @ 10 V
±20V
605 pF @ 15 V
3.1W (Ta)
-
AON7556
MOSFET N-CH 30V 12A/12A 8DFN
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-PowerVDFN
N-Channel
30 V
-
MOSFET (Metal Oxide)
AlphaMOS
-
10.5mOhm @ 12A, 10V
2.2V @ 250µA
8-DFN-EP (3x3)
12A (Ta), 12A (Tc)
4.5V, 10V
15 nC @ 10 V
±20V
600 pF @ 15 V
4.1W (Ta), 12.5W (Tc)
-
AO6411
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
SC-74, SOT-457
P-Channel
20 V
-
MOSFET (Metal Oxide)
AlphaMOS
-
-
900mV @ 250µA
6-TSOP
7A (Ta)
1.8V, 4.5V
18 nC @ 4.5 V
±8V
1025 pF @ 10 V
2.7W (Ta)
-
AOD522P
MOSFET N-CH 30V 17A/46A TO252
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
N-Channel
30 V
-
MOSFET (Metal Oxide)
AlphaMOS
-
5.2mOhm @ 20A, 10V
2.4V @ 250µA
TO-252 (DPAK)
17A (Ta), 46A (Tc)
4.5V, 10V
18 nC @ 10 V
±20V
1500 pF @ 15 V
2.5W (Ta), 53W (Tc)
-
AON7524
MOSFET N-CH 30V 25A/28A 8DFN
1+
$0.2789
5+
$0.2634
10+
$0.2479
Quantity
15,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-PowerVDFN
N-Channel
30 V
-
MOSFET (Metal Oxide)
AlphaMOS
-
3.3mOhm @ 20A, 10V
1.2V @ 250µA
8-DFN-EP (3x3)
25A (Ta), 28A (Tc)
2.5V, 10V
50 nC @ 10 V
±12V
2250 pF @ 15 V
3.1W (Ta), 32W (Tc)
-
AOW284
MOSFET N-CH 80V 15A/105A TO262
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
TO-262-3 Long Leads, I²Pak, TO-262AA
N-Channel
80 V
-
MOSFET (Metal Oxide)
AlphaMOS
-
4.3mOhm @ 20A, 10V
3.3V @ 250µA
TO-262
15A (Ta), 105A (Tc)
6V, 10V
100 nC @ 10 V
±20V
5154 pF @ 40 V
1.9W (Ta), 250W (Tc)
-
AON6294
MOSFET N-CH 100V 17A/52A 8DFN
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-PowerSMD, Flat Leads
N-Channel
100 V
-
MOSFET (Metal Oxide)
AlphaMOS
-
10mOhm @ 20A, 10V
3.5V @ 250µA
8-DFN (5x6)
17A (Ta), 52A (Tc)
6V, 10V
40 nC @ 10 V
±20V
2265 pF @ 50 V
6.2W (Ta), 57W (Tc)
-
AOD2544
MOSFET N-CH 150V 6.5A/23A TO252
1+
$6.3380
5+
$5.9859
10+
$5.6338
Quantity
788 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
N-Channel
150 V
-
MOSFET (Metal Oxide)
AlphaMOS
-
54mOhm @ 5A, 10V
2.7V @ 250µA
TO-252 (DPAK)
6.5A (Ta), 23A (Tc)
4.5V, 10V
20 nC @ 10 V
±20V
675 pF @ 75 V
6.2W (Ta), 75W (Tc)
-
AON7254
MOSFET N-CH 150V 5.5A/17A 8DFN
1+
$0.8873
5+
$0.8380
10+
$0.7887
Quantity
1,208 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-PowerWDFN
N-Channel
150 V
-
MOSFET (Metal Oxide)
AlphaMOS
-
54mOhm @ 5A, 10V
2.7V @ 250µA
8-DFN-EP (3.3x3.3)
5.5A (Ta), 17A (Tc)
4.5V, 10V
20 nC @ 10 V
±20V
675 pF @ 75 V
4.1W (Ta), 39W (Tc)
-
AON7380
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-PowerVDFN
N-Channel
30 V
-
MOSFET (Metal Oxide)
AlphaMOS
-
6.8mOhm @ 20A, 10V
2.2V @ 250µA
8-DFN-EP (3x3)
24A (Tc)
4.5V, 10V
25 nC @ 10 V
±20V
825 pF @ 15 V
4.1W (Ta), 24W (Tc)
-
AON6558
MOSFET N-CH 30V 25A/28A 8DFN
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-PowerSMD, Flat Leads
N-Channel
30 V
-
MOSFET (Metal Oxide)
AlphaMOS
-
5.1mOhm @ 20A, 10V
2.2V @ 250µA
8-DFN (5x6)
25A (Ta), 28A (Tc)
4.5V, 10V
25 nC @ 10 V
±20V
1128 pF @ 15 V
5W (Ta), 24W (Tc)
-
AOD2922
MOSFET N-CH 100V 3.5A/7A TO252
1+
$0.2839
5+
$0.2682
10+
$0.2524
Quantity
4,895 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
N-Channel
100 V
-
MOSFET (Metal Oxide)
AlphaMOS
-
140mOhm @ 5A, 10V
2.7V @ 250µA
TO-252 (DPAK)
3.5A (Ta), 7A (Tc)
4.5V, 10V
10 nC @ 10 V
±20V
310 pF @ 50 V
5W (Ta), 17W (Tc)
-
AON7538
MOSFET N-CH 30V 23A/30A 8DFN
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-PowerVDFN
N-Channel
30 V
-
MOSFET (Metal Oxide)
AlphaMOS
-
5.1mOhm @ 20A, 10V
2.2V @ 250µA
8-DFN-EP (3x3)
23A (Ta), 30A (Tc)
4.5V, 10V
25 nC @ 10 V
±20V
1128 pF @ 15 V
4.2W (Ta), 24W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.