AlphaMOS Series, Single FETs, MOSFETs

Results:
69
Manufacturer
Series
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Gate Charge (Qg) (Max) @ Vgs
Vgs(th) (Max) @ Id
Package / Case
Supplier Device Package
Drain to Source Voltage (Vdss)
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Operating Temperature
FET Type
FET Feature
Mounting Type
Technology
Grade
Qualification
Results remaining69
Applied Filters:
AlphaMOS
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperaturePackage / CaseSupplier Device PackageFET TypeDrain to Source Voltage (Vdss)TechnologySeriesFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)
AO4354_101
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-SOIC (0.154", 3.90mm Width)
8-SOIC
N-Channel
30 V
MOSFET (Metal Oxide)
AlphaMOS
-
23A (Ta)
2.2V @ 250µA
4.5V, 10V
3.7mOhm @ 20A, 10V
49 nC @ 10 V
±20V
2010 pF @ 15 V
3.1W (Ta)
AON6504_002
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-PowerSMD, Flat Leads
8-DFN (5x6)
N-Channel
30 V
MOSFET (Metal Oxide)
AlphaMOS
-
51A (Ta), 85A (Tc)
2.1V @ 250µA
4.5V, 10V
2.1mOhm @ 20A, 10V
60 nC @ 10 V
±20V
2719 pF @ 15 V
7.3W (Ta), 83W (Tc)
AOI206_002
MOSFET N-CH 30V 18A/46A TO251A
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
TO-251-3 Short Leads, IPak, TO-251AA
TO-251A
N-Channel
30 V
MOSFET (Metal Oxide)
AlphaMOS
-
18A (Ta), 46A (Tc)
2.4V @ 250µA
4.5V, 10V
5mOhm @ 20A, 10V
33 nC @ 10 V
±20V
1333 pF @ 15 V
2.5W (Ta), 50W (Tc)
AON7752_101
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-PowerVDFN
8-DFN-EP (3x3)
N-Channel
30 V
MOSFET (Metal Oxide)
AlphaMOS
-
15A (Ta), 16A (Tc)
2.5V @ 250µA
4.5V, 10V
8.2mOhm @ 16A, 10V
15 nC @ 10 V
±20V
605 pF @ 15 V
3.1W (Ta), 20W (Tc)
AON7758_001
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-PowerWDFN
8-DFN-EP (3.3x3.3)
N-Channel
30 V
MOSFET (Metal Oxide)
AlphaMOS
-
36A (Ta), 75A (Tc)
2V @ 250µA
4.5V, 10V
1.85mOhm @ 20A, 10V
100 nC @ 10 V
±12V
5200 pF @ 15 V
4.2W (Ta), 34W (Tc)
AOD206_001
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252 (DPAK)
N-Channel
30 V
MOSFET (Metal Oxide)
AlphaMOS
-
18A (Ta), 46A (Tc)
2.4V @ 250µA
4.5V, 10V
5mOhm @ 20A, 10V
33 nC @ 10 V
±20V
1333 pF @ 15 V
2.5W (Ta), 50W (Tc)
AON6360P
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-PowerSMD, Flat Leads
8-DFN (5x6)
N-Channel
30 V
MOSFET (Metal Oxide)
AlphaMOS
-
36A (Ta), 85A (Tc)
2.2V @ 250µA
4.5V, 10V
3mOhm @ 20A, 10V
24 nC @ 10 V
±20V
1590 pF @ 15 V
6.2W (Ta), 42W (Tc)
AOD526_DELTA
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252 (DPAK)
N-Channel
30 V
MOSFET (Metal Oxide)
AlphaMOS
-
50A (Tc)
2.4V @ 250µA
4.5V, 10V
5mOhm @ 20A, 10V
33 nC @ 10 V
±20V
1550 pF @ 15 V
2.5W (Ta), 50W (Tc)
AON6504_001
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-
8-PowerSMD, Flat Leads
8-DFN (5x6)
-
-
-
AlphaMOS
-
85A (Tc)
-
-
-
-
-
-
-
AOD206_030
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252 (DPAK)
N-Channel
30 V
MOSFET (Metal Oxide)
AlphaMOS
-
18A (Ta), 46A (Tc)
2.4V @ 250µA
4.5V, 10V
5mOhm @ 20A, 4.5V
33 nC @ 10 V
±20V
1333 pF @ 15 V
2.5W (Ta), 50W (Tc)
AON6508_101
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-PowerSMD, Flat Leads
8-DFN (5x6)
N-Channel
30 V
MOSFET (Metal Oxide)
AlphaMOS
-
29A (Ta), 32A (Tc)
2.2V @ 250µA
4.5V, 10V
3.2mOhm @ 20A, 10V
49 nC @ 10 V
±20V
2010 pF @ 15 V
4.2W (Ta), 41W (Tc)
AON7548_101
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-PowerVDFN
8-DFN-EP (3x3)
N-Channel
30 V
MOSFET (Metal Oxide)
AlphaMOS
-
14A (Ta), 24A (Tc)
2.5V @ 250µA
4.5V, 10V
8.8mOhm @ 20A, 10V
22 nC @ 10 V
±20V
1086 pF @ 15 V
3.1W (Ta), 23W (Tc)
AON6524_001
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-VDFN Exposed Pad
8-DFN (5x6)
N-Channel
30 V
MOSFET (Metal Oxide)
AlphaMOS
-
27A (Ta), 68A (Tc)
2.3V @ 250µA
4.5V, 10V
5mOhm @ 20A, 10V
23 nC @ 10 V
±20V
1900 pF @ 15 V
5.7W (Ta), 35.5W (Tc)
AON6566_MSI
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-PowerSMD, Flat Leads
8-DFN (5x6)
N-Channel
30 V
MOSFET (Metal Oxide)
AlphaMOS
-
29A (Ta), 32A (Tc)
2.4V @ 250µA
4.5V, 10V
5mOhm @ 20A, 10V
33 nC @ 10 V
±20V
1550 pF @ 15 V
6W (Ta), 25W (Tc)
AON6756_101
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-VDFN Exposed Pad
8-DFN (5x6)
N-Channel
30 V
MOSFET (Metal Oxide)
AlphaMOS
Schottky Diode (Body)
36A (Tc)
2.4V @ 250µA
4.5V, 10V
2.4mOhm @ 20A, 10V
64 nC @ 10 V
±20V
2796 pF @ 15 V
7.3W (Ta), 83W (Tc)
AON6758_101
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-VDFN Exposed Pad
8-DFN (5x6)
N-Channel
30 V
MOSFET (Metal Oxide)
AlphaMOS
Schottky Diode (Body)
27A (Ta), 32A (Tc)
2.4V @ 250µA
4.5V, 10V
3.6mOhm @ 20A, 10V
40 nC @ 10 V
±20V
1975 pF @ 15 V
4.1W (Ta), 41W (Tc)
AON6758_102
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-VDFN Exposed Pad
8-DFN (5x6)
N-Channel
30 V
MOSFET (Metal Oxide)
AlphaMOS
Schottky Diode (Body)
27A (Ta), 32A (Tc)
2.4V @ 250µA
4.5V, 10V
3.6mOhm @ 20A, 10V
40 nC @ 10 V
±20V
1975 pF @ 15 V
4.1W (Ta), 41W (Tc)
AON6758_103
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-VDFN Exposed Pad
8-DFN (5x6)
N-Channel
30 V
MOSFET (Metal Oxide)
AlphaMOS
Schottky Diode (Body)
27A (Ta), 32A (Tc)
2.4V @ 250µA
4.5V, 10V
3.6mOhm @ 20A, 10V
40 nC @ 10 V
±20V
1975 pF @ 15 V
4.1W (Ta), 41W (Tc)
AON6758_104
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-VDFN Exposed Pad
8-DFN (5x6)
N-Channel
30 V
MOSFET (Metal Oxide)
AlphaMOS
Schottky Diode (Body)
27A (Ta), 32A (Tc)
2.4V @ 250µA
4.5V, 10V
3.6mOhm @ 20A, 10V
40 nC @ 10 V
±20V
1975 pF @ 15 V
4.1W (Ta), 41W (Tc)
AON6754
MOSFET N-CH 30V 52A/85A 8DFN
1+
$0.3803
5+
$0.3592
10+
$0.3380
Quantity
30,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-PowerSMD, Flat Leads
8-DFN (5x6)
N-Channel
30 V
MOSFET (Metal Oxide)
AlphaMOS
Schottky Diode (Body)
52A (Ta), 85A (Tc)
2.4V @ 250µA
4.5V, 10V
1.8mOhm @ 20A, 10V
64 nC @ 10 V
±20V
2796 pF @ 15 V
7.3W (Ta), 83W (Tc)

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.