TrenchFET® Series, Single FETs, MOSFETs

Results:
2,248
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Supplier Device Package
Vgs(th) (Max) @ Id
Package / Case
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
Vgs (Max)
Operating Temperature
Mounting Type
FET Feature
FET Type
Grade
Qualification
Technology
Results remaining2,248
Applied Filters:
TrenchFET®
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypePackage / CaseDrain to Source Voltage (Vdss)Input Capacitance (Ciss) (Max) @ VdsGradeSeriesTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsDrive Voltage (Max Rds On, Min Rds On)Vgs (Max)Power Dissipation (Max)Supplier Device PackageQualification
G170P03D3
P-30V, -20A,RD<18M@-10V,VTH-1V~-
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
8-PowerVDFN
30 V
-
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
30A (Tc)
15mOhm @ 5A, 10V
2.5V @ 250µA
-
4.5V, 10V
±20V
15W (Tc)
8-DFN (3.15x3.05)
-
G6P06
P60V,RD(MAX)<96M@-10V,RD(MAX)<14
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
8-SOIC (0.154", 3.90mm Width)
60 V
930 pF @ 30 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
6A (Tc)
96mOhm @ 4A, 10V
3V @ 250µA
25 nC @ 10 V
4.5V, 10V
±20V
4.1W (Tc)
8-SOP
-
G08N06S
N60V, RD(MAX)<30M@10V,RD(MAX)<40
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
8-SOIC (0.154", 3.90mm Width)
60 V
979 pF @ 30 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
5A (Tc)
30mOhm @ 3A, 10V
2.5V @ 250µA
22 nC @ 10 V
4.5V, 10V
±20V
2.1W (Tc)
8-SOP
-
G16P03D3
MOSFET P-CH 30V 45A DFN3*3-8L
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
8-PowerVDFN
-
-
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
45A (Tc)
12mOhm @ 10A, 10V
2.5V @ 250µA
-
4.5V, 10V
±20V
55W (Tc)
8-DFN (3.15x3.05)
-
3401
MOSFET P-CH 30V 4.2A SOT-23
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
TO-236-3, SC-59, SOT-23-3
-
-
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
4.2A (Tc)
55mOhm @ 4A, 10V
1.3V @ 250µA
-
4.5V, 10V
±12V
1.2W (Tc)
SOT-23-3
-
G3404B
N30V,RD(MAX)<22M@10V,RD(MAX)<35M
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-236-3, SC-59, SOT-23-3
30 V
526 pF @ 15 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
5.6A (Tc)
22mOhm @ 4.2A, 10V
2V @ 250µA
12.2 nC @ 10 V
4.5V, 10V
±20V
1.2W (Tc)
SOT-23-3
-
G1003B
MOSFET N-CH 100V 3A SOT-23-3L
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-236-3, SC-59, SOT-23-3
-
-
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
3A (Tc)
130mOhm @ 1A, 10V
2.5V @ 250µA
-
4.5V, 10V
±20V
3.3W (Tc)
SOT-23-3L
-
G29
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
TO-236-3, SC-59, SOT-23-3
20 V
1151 pF @ 10 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
4.1A (Tc)
30mOhm @ 3A, 4.5V
900mV @ 250µA
12.5 nC @ 10 V
2.5V, 4.5V
±12V
1.05W (Tc)
SOT-23
-
G2305
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
TO-236-3, SC-59, SOT-23-3
20 V
-
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
4.8A (Tc)
46mOhm @ 4.1A, 4.5V
900mV @ 250µA
7.8 nC @ 4.5 V
2.5V, 4.5V
±10V
1.7W (Tc)
SOT-23-3
-
G06P01E
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
TO-236-3, SC-59, SOT-23-3
12 V
1087 pF @ 6 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
4A (Tc)
28mOhm @ 3A, 4.5V
1V @ 250µA
14 nC @ 4.5 V
1.8V, 4.5V
±10V
1.8W (Tc)
SOT-23-3
-
3415A
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
TO-236-3, SC-59, SOT-23-3
20 V
950 pF @ 10 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
4A (Tc)
45mOhm @ 4A, 4.5V
1.1V @ 250µA
12 nC @ 4.5 V
2.5V, 4.5V
±10V
1.4W (Tc)
SOT-23-3
-
G2304
MOSFET N-CH 30V 3.6A SOT-23
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-236-3, SC-59, SOT-23-3
30 V
230 pF @ 15 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
3.6A (Tc)
58mOhm @ 3.6A, 10V
2.2V @ 250µA
4 nC @ 10 V
4.5V, 10V
±20V
1.7W (Tc)
SOT-23-3
-
G02P06
P60V,RD(MAX)<190M@-10V,RD(MAX)<2
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
TO-236-3, SC-59, SOT-23-3
60 V
573 pF @ 30 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
1.6A (Tc)
190mOhm @ 1A, 10V
2.5V @ 250µA
11.3 nC @ 10 V
4.5V, 10V
±20V
1.5W (Tc)
SOT-23
-
G9435S
P-30V,-5.1A,RD(MAX)<55M@-10V,VTH
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
8-SOIC (0.154", 3.90mm Width)
30 V
1040 pF @ 15 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
5.1A (Tc)
55mOhm @ 5.1A, 10V
3V @ 250µA
12 nC @ 10 V
4.5V, 10V
±20V
2.5W (Tc)
8-SOP
-
G66
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
6-WDFN Exposed Pad
16 V
740 pF @ 4 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
5.8A (Tc)
45mOhm @ 4.1A, 4.5V
1V @ 250µA
7.8 nC @ 4.5 V
2.5V, 4.5V
±8V
1.7W (Tc)
6-DFN (2x2)
-
G6N02L
MOSFET N-CH 20V 6A SOT-23-3L
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-236-3, SC-59, SOT-23-3
20 V
1140 pF @ 10 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
6A (Tc)
11.3mOhm @ 3A, 4.5V
900mV @ 250µA
12.5 nC @ 10 V
2.5V, 4.5V
±12V
1.8W (Tc)
SOT-23-3
-
5P40
P40V,RD(MAX)<85M@-10V,RD(MAX)<12
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
TO-236-3, SC-59, SOT-23-3
40 V
650 pF @ 20 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
5A (Tc)
85mOhm @ 5A, 10V
3V @ 250µA
14 nC @ 10 V
4.5V, 10V
±20V
2W (Tc)
SOT-23-3
-
G300P06D5
P-60V,-40A,RD(MAX)<30M@-10V,VTH-
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
8-PowerTDFN
60 V
2705 pF @ 30 V
-
TrenchFET®
MOSFET (Metal Oxide)
-
40A (Tc)
30mOhm @ 10A, 10V
3V @ 250µA
49 nC @ 10 V
10V
±20V
50W (Tc)
8-DFN (4.9x5.75)
-
G26P04K
P-40V,RD(MAX)<18M@-10V,RD(MAX)<2
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
40 V
-
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
26A (Tc)
18mOhm @ 10A, 10V
2.5V @ 250µA
42 nC @ 10 V
4.5V, 10V
±20V
78W (Tc)
TO-252
-
G60N04K
N40V,RD(MAX)<7M@10V,RD(MAX)<12M@
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
40 V
1800 pF @ 20 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
60A (Tc)
7mOhm @ 30A, 10V
2.5V @ 250µA
29 nC @ 10 V
4.5V, 10V
±20V
65W (Tc)
TO-252 (DPAK)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.