TrenchFET® Series, Single FETs, MOSFETs

Results:
2,392
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Supplier Device Package
Vgs(th) (Max) @ Id
Package / Case
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
Vgs (Max)
Operating Temperature
Mounting Type
FET Feature
FET Type
Grade
Qualification
Technology
Results remaining2,392
Applied Filters:
TrenchFET®
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperaturePackage / CaseSupplier Device PackageFET TypeDrain to Source Voltage (Vdss)GradeSeriesTechnologyFET FeatureVgs(th) (Max) @ IdCurrent - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsQualificationPower Dissipation (Max)
2301H
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
SOT-23-3
P-Channel
30 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
2.4V @ 250µA
2.8A (Tc)
4.5V, 10V
75mOhm @ 3A, 10V
12 nC @ 2.5 V
±20V
405 pF @ 10 V
-
890mW (Tc)
2300F
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
SOT-23-3
N-Channel
20 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
900mV @ 250µA
6A (Tc)
2.5V, 4.5V
27mOhm @ 2.3A, 4.5V
11 nC @ 4.5 V
±12V
630 pF @ 10 V
-
1.25W (Tc)
25P06
P60V,RD(MAX)<45M@-10V,VTH2V~3V T
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252
P-Channel
60 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
3V @ 250µA
25A (Tc)
10V
32mOhm @ 12A, 10V
37 nC @ 10 V
±20V
3384 pF @ 30 V
-
100W (Tc)
G70P02K
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252
P-Channel
15 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
1.5V @ 250µA
70A (Tc)
2.5V, 4.5V
8.5mOhm @ 20A, 4.5V
55 nC @ 4.5 V
±12V
3500 pF @ 10 V
-
70W (Tc)
G15N06K
N-CH, 60V,15A,RD(MAX)<45M@10V,RD
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252
N-Channel
60 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
3V @ 250µA
15A (Tc)
4.5V, 10V
45mOhm @ 8A, 10V
25 nC @ 10 V
±20V
763 pF @ 30 V
-
40W (Tc)
G12P03D3
P30V,RD(MAX)<20M@-10V,RD(MAX)<26
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-PowerVDFN
8-DFN (3.15x3.05)
P-Channel
30 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
2V @ 250µA
12A (Tc)
4.5V, 10V
20mOhm @ 6A, 10V
24.5 nC @ 10 V
±20V
1253 pF @ 15 V
-
30W (Tc)
G23N06K
N60V,RD(MAX)<35M@10V,RD(MAX)<45M
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252 (DPAK)
N-Channel
60 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
2.5V @ 250µA
23A (Tc)
4.5V, 10V
35mOhm @ 20A, 10V
25 nC @ 10 V
±20V
590 pF @ 15 V
-
38W (Tc)
G15P04K
P40V,RD(MAX)<39M@-10V,RD(MAX)<70
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252 (DPAK)
P-Channel
40 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
3V @ 250µA
15A (Tc)
4.5V, 10V
39mOhm @ 10A, 10V
25 nC @ 10 V
±20V
930 pF @ 20 V
-
50W (Tc)
G50N03K
N30V,RD(MAX)<7M@10V,RD(MAX)<12M@
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252 (DPAK)
N-Channel
30 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
2.5V @ 250µA
65A (Tc)
4.5V, 10V
7mOhm @ 20A, 10V
16.6 nC @ 10 V
±20V
950 pF @ 15 V
-
48W (Tc)
G10N10A
N100V,RD(MAX)130MOHM@10V,TO-252
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252
N-Channel
100 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
3V @ 250µA
10A (Tc)
4.5V, 10V
130mOhm @ 2A, 10V
90 nC @ 10 V
±20V
690 pF @ 25 V
-
28W (Tc)
G06N06S
N60V,RD(MAX)<22M@10V,RD(MAX)<35M
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-SOIC (0.154", 3.90mm Width)
8-SOP
N-Channel
60 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
2.4V @ 250µA
8A (Tc)
4.5V, 10V
22mOhm @ 6A, 10V
46 nC @ 10 V
±20V
1600 pF @ 30 V
-
2.1W (Tc)
G50N03D5
N30V,RD(MAX)<4.5M@10V,RD(MAX)<8M
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-PowerTDFN
8-DFN (4.9x5.75)
N-Channel
30 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
2.4V @ 250µA
50A (Tc)
4.5V, 10V
4.5mOhm @ 20A, 10V
38.4 nC @ 10 V
±20V
1784 pF @ 15 V
-
20W (Tc)
G48N03D3
N30V,RD(MAX)<6M@10V,RD(MAX)<8M@4
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-PowerVDFN
8-DFN (3.15x3.05)
N-Channel
30 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
2.4V @ 250µA
48A (Tc)
4.5V, 10V
4mOhm @ 20A, 10V
38 nC @ 10 V
±20V
1784 pF @ 15 V
-
45W (Tc)
G26P04D5
P40V,RD(MAX)<18M@-10V,RD(MAX)<22
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-PowerTDFN
8-DFN (4.9x5.75)
P-Channel
40 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
2.5V @ 250µA
26A (Tc)
4.5V, 10V
18mOhm @ 12A, 10V
45 nC @ 10 V
±20V
2479 pF @ 20 V
-
50W (Tc)
06N06L
N60V,RD(MAX)<42M@10V,RD(MAX)<46M
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
SOT-23-3L
N-Channel
60 V
-
TrenchFET®
MOSFET (Metal Oxide)
-
2.5V @ 250µA
5.5A
-
42mOhm @ 3A, 10V
2.4 nC @ 10 V
±20V
765 pF @ 30 V
-
960mW
G7P03L
P30V,RD(MAX)<23M@-10V,RD(MAX)<34
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
SOT-23-3
P-Channel
30 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
2.5V @ 250µA
7A (Tc)
4.5V, 10V
23mOhm @ 3A, 10V
29 nC @ 10 V
±20V
1500 pF @ 15 V
-
1.9W (Tc)
03N06L
N60V,RD(MAX)<100M@10V,RD(MAX)<12
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
SOT-23-3L
N-Channel
60 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
1.2V @ 250µA
3A (Tc)
4.5V, 10V
100mOhm @ 2A, 10V
14.6 nC @ 30 V
±20V
510 pF @ 30 V
-
1.7W (Tc)
G1006LE
N100V,RD(MAX)<150M@10V,RD(MAX)<1
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
SOT-23-3
N-Channel
100 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
2.2V @ 250µA
3A (Tc)
4.5V, 10V
150mOhm @ 3A, 10V
18.2 nC @ 10 V
±20V
622 pF @ 50 V
-
1.5W (Tc)
G09P02L
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
SOT-23-3
P-Channel
20 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
1.2V @ 250µA
9A (Tc)
2.5V, 4.5V
20mOhm @ 1A, 4.5V
15 nC @ 4.5 V
±12V
620 pF @ 10 V
-
2.5W (Tc)
G28N03D3
N30V,RD(MAX)<12M@10V,RD(MAX)<18M
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-PowerVDFN
8-DFN (3.15x3.05)
N-Channel
30 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
2.5V @ 250µA
28A (Tc)
4.5V, 10V
12mOhm @ 16A, 10V
15 nC @ 10 V
±20V
891 pF @ 15 V
-
23W (Tc)

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.