TrenchFET® Series, Single FETs, MOSFETs

Results:
2,392
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Supplier Device Package
Vgs(th) (Max) @ Id
Package / Case
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
Vgs (Max)
Operating Temperature
Mounting Type
FET Feature
FET Type
Grade
Qualification
Technology
Results remaining2,392
Applied Filters:
TrenchFET®
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypePackage / CaseSupplier Device PackageDrain to Source Voltage (Vdss)GradeSeriesTechnologyFET FeatureVgs(th) (Max) @ IdCurrent - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Power Dissipation (Max)QualificationInput Capacitance (Ciss) (Max) @ Vds
G080P06M
P-60V,-195A,RD(MAX)<7.5M@-10V,VT
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263
60 V
-
TrenchFET®
MOSFET (Metal Oxide)
-
4V @ 250µA
195A (Tc)
10V
7.5mOhm @ 20A, 10V
186 nC @ 10 V
±20V
294W (Tc)
-
15870 pF @ 30 V
G65P06T
P-60V,RD(MAX)<18M@-10V,VTH-2.0V~
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
P-Channel
TO-220-3
TO-220
60 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
3.5V @ 250µA
65A (Tc)
10V
18mOhm @ 20A, 10V
75 nC @ 10 V
±20V
130W (Tc)
-
5814 pF @ 25 V
G700P06T
P-60V,25A,RD<70M@-10V,VTH1V~-2.5
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
P-Channel
TO-220-3
TO-220
60 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
2.5V @ 250µA
25A (Tc)
4.5V, 10V
70mOhm @ 4A, 10V
23 nC @ 10 V
±20V
100W (Tc)
-
1428 pF @ 30 V
G70N04T
N40V,RD(MAX)<7M@10V,RD(MAX)<12M@
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
TO-220
40 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
2.4V @ 250µA
70A (Tc)
4.5V, 10V
7mOhm @ 30A, 10V
50 nC @ 10 V
±20V
104W (Tc)
-
4010 pF @ 20 V
G300P06T
MOSFET, P-CH, 60V,40A,TO-220
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
P-Channel
TO-220-3
TO-220
60 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
3V @ 250µA
40A (Tc)
10V
30mOhm @ 12A, 10V
49 nC @ 10 V
±20V
50W (Tc)
-
2736 pF @ 30 V
G65P06F
P-CH, -60V, 65A, RD(MAX)<18M@-10
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
P-Channel
TO-220-3 Full Pack
TO-220F
60 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
3.5V @ 250µA
65A (Tc)
10V
18mOhm @ 20A, 10V
75 nC @ 10 V
±20V
39W (Tc)
-
6477 pF @ 25 V
18N20F
N200V, 18A,RD<0.19@10V,VTH1.0V~3
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220F
200 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
3V @ 250µA
18A (Tc)
10V
190mOhm @ 9A, 10V
17.7 nC @ 10 V
±20V
110W (Tc)
-
836 pF @ 25 V
G60N10T
N100V,RD(MAX)<25M@10V,RD(MAX)<30
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
TO-220
100 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
2.5V @ 250µA
60A (Tc)
4.5V, 10V
17mOhm @ 20A, 10V
146 nC @ 10 V
±20V
132W (Tc)
-
3970 pF @ 50 V
G110N06T
N60V,RD(MAX)<6.4M@10V,RD(MAX)<8.
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
TO-220
60 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
2.5V @ 250µA
110A (Tc)
4.5V, 10V
6.4mOhm @ 20A, 10V
113 nC @ 10 V
±20V
160W (Tc)
-
5538 pF @ 25 V
G1003A
N100V,RD(MAX)<210M@10V,RD(MAX)<2
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-236-3, SC-59, SOT-23-3
SOT-23-3
100 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
3V @ 250µA
3A (Tc)
4.5V, 10V
210mOhm @ 3A, 10V
18.2 nC @ 10 V
±20V
5W (Tc)
-
622 pF @ 25 V
G15N10C
N100V,RD(MAX)<110M@10V,RD(MAX)<1
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252
100 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
3V @ 250µA
22A (Tc)
4.5V, 10V
90mOhm @ 8A, 10V
22 nC @ 10 V
±20V
55W (Tc)
-
-
5N20A
N200V,RD(MAX)<650M@10V,VTH1V~3V,
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252 (DPAK)
200 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
3V @ 250µA
5A (Tc)
10V
580mOhm @ 2.5A, 10V
10.8 nC @ 10 V
±20V
78W (Tc)
-
255 pF @ 25 V
G45P40T
MOSFET, P-CH, 40V,45A,TO-220
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
P-Channel
TO-220-3
TO-220
40 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
2.5V @ 250µA
45A (Tc)
4.5V, 10V
16mOhm @ 30A, 10V
42 nC @ 10 V
±20V
80W (Tc)
-
3269 pF @ 20 V
G30N02T
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
TO-220
20 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
1.2V @ 250µA
30A (Tc)
4.5V
13mOhm @ 20A, 4.5V
15 nC @ 10 V
±12V
40W (Tc)
-
900 pF @ 10 V
G60N06T
N60V, 50A,RD<17M@10V,VTH1.0V~2.0
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
TO-220
60 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
2V @ 250µA
50A (Tc)
4.5V, 10V
17mOhm @ 5A, 10V
50 nC @ 10 V
±20V
85W (Tc)
-
2050 pF @ 30 V
G65P06D5
P60V,RD(MAX)<18M@-10V,VTH-2V~-3V
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
8-PowerTDFN
8-DFN (4.9x5.75)
60 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
3.5V @ 250µA
65A (Tc)
10V
18mOhm @ 20A, 10V
75 nC @ 10 V
±20V
104W (Tc)
-
5814 pF @ 25 V
G630J
N200V, 9A,RD<0.28@10V,VTH1.0V~3.
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-251-3 Short Leads, IPak, TO-251AA
TO-251
200 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
3V @ 250µA
9A (Tc)
10V
280mOhm @ 4.5A, 10V
11.8 nC @ 10 V
±20V
83W (Tc)
-
509 pF @ 25 V
2302
MOSFET N-CH 20V 4.3A SOT-23
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-236-3, SC-59, SOT-23-3
SOT-23-3
-
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
1.1V @ 250µA
4.3A (Tc)
2.5V, 4.5V
27mOhm @ 2.2A, 4.5V
-
±10V
1W (Tc)
-
-
G35P04D5
MOSFET P-CH 40V 35A DFN5*6-8L
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
8-PowerTDFN
8-DFN (4.9x5.75)
-
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
2.3V @ 250µA
35A (Tc)
4.5V, 10V
14mOhm @ 15A, 10V
-
±20V
35W (Tc)
-
-
G18P03D3
P30V,RD(MAX)<10M@-10V,RD(MAX)<15
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
8-PowerVDFN
8-DFN (3.15x3.05)
30 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
2.5V @ 250µA
50A (Tc)
4.5V, 10V
10mOhm @ 10A, 10V
30 nC @ 10 V
±20V
60W (Tc)
-
2060 pF @ 15 V

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.