TrenchFET® Series, Single FETs, MOSFETs

Results:
2,392
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Supplier Device Package
Vgs(th) (Max) @ Id
Package / Case
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
Vgs (Max)
Operating Temperature
Mounting Type
FET Feature
FET Type
Grade
Qualification
Technology
Results remaining2,392
Applied Filters:
TrenchFET®
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperaturePackage / CaseSupplier Device PackageFET TypeGradeSeriesTechnologyFET FeatureVgs(th) (Max) @ IdDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Power Dissipation (Max)Qualification
G2K8P15S
P-150V,-2.2A,RD(MAX)<310M@-10V,V
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-SOIC (0.154", 3.90mm Width)
8-SOP
P-Channel
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
3.5V @ 250µA
150 V
2.2A (Tc)
10V
310mOhm @ 500mA, 10V
11 nC @ 10 V
±20V
2.5W (Tc)
-
G220P02D2
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
6-UDFN Exposed Pad
6-DFN (2x2)
P-Channel
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
1.2V @ 250µA
20 V
8A (Tc)
4.5V, 10V
20mOhm @ 6A, 10V
14 nC @ 10 V
±12V
3.5W (Tc)
-
G75P04S
MOSFET, P-CH,-40V,-11A,RD(MAX)<8
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-SOIC (0.154", 3.90mm Width)
8-SOP
P-Channel
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
2.5V @ 250µA
40 V
11A (Tc)
4.5V, 10V
8mOhm @ 10A, 10V
106 nC @ 10 V
±20V
2.5W (Tc)
-
G250N03IE
N30V,ESD 5.3A,RD<25M@10V,VTH0.5V
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
SOT-23-6
SOT-23-6L
N-Channel
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
1.3V @ 250µA
30 V
5.3A (Tc)
2.5V, 10V
25mOhm @ 4A, 10V
9.1 nC @ 4.5 V
±10V
1.4W (Tc)
-
G60N10K
N90V,60A,RD<25M@10V,VTH0.8V~2.5V
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252
N-Channel
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
2.5V @ 250µA
90 V
60A (Tc)
4.5V, 10V
25mOhm @ 20A, 10V
111 nC @ 10 V
±20V
56W (Tc)
-
G350P02LLE
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
SOT-23-6
SOT-23-6L
P-Channel
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
1V @ 250µA
20 V
4.5A (Tc)
1.8V, 4.5V
35mOhm @ 4A, 4.5V
17.2 nC @ 10 V
±10V
1.4W (Tc)
-
G170P02D2
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
6-UDFN Exposed Pad
6-DFN (2x2)
P-Channel
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
1V @ 250µA
20 V
16A (Tc)
2.5V, 4.5V
17mOhm @ 6A, 4.5V
30 nC @ 10 V
±8V
18W (Tc)
-
G450P04K
MOSFET, P-CH,-40V,-11A,RD(MAX)<4
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252
P-Channel
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
2.5V @ 250µA
40 V
11A (Tc)
4.5V, 10V
40mOhm @ 6A, 10V
25 nC @ 10 V
±20V
48W (Tc)
-
G800N06H
N60V, 3A,RD<80M@10V,VTH0.7V~1.2V
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-261-4, TO-261AA
SOT-223
N-Channel
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
1.2V @ 250µA
60 V
3A (Tc)
4.5V, 10V
80mOhm @ 3A, 10V
6 nC @ 4.5 V
±20V
1.2W (Tc)
-
G700P06LL
MOSFET, P-CH,-60V,-5A,RD(MAX)<75
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
SOT-23-6
SOT-23-6L
P-Channel
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
3V @ 250µA
60 V
5A (Tc)
4.5V, 10V
75mOhm @ 3.2A, 10V
15.8 nC @ 10 V
±20V
3.1W (Tc)
-
G700P06D5
P-60V,-25A,RD(MAX)<70M@-10V,VTH-
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-PowerTDFN
8-DFN (4.9x5.75)
P-Channel
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
2.5V @ 250µA
60 V
25A (Tc)
4.5V, 10V
70mOhm @ 4A, 10V
25 nC @ 10 V
±20V
42W (Tc)
-
G12P06K
P-60V,-12A,RD(MAX)<75M@-10V,VTH-
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252
P-Channel
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
3V @ 250µA
60 V
12A (Tc)
4.5V, 10V
75mOhm @ 6A, 10V
23 nC @ 10 V
±20V
27W (Tc)
-
G04P10HE
P-100V,-4A,RD(MAX)<200M@-10V,VTH
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-261-4, TO-261AA
SOT-223
P-Channel
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
2.8V @ 250µA
100 V
4A (Tc)
4.5V, 10V
200mOhm @ 6A, 10V
25 nC @ 10 V
±20V
1.2W (Tc)
-
G900P15K
P-150V,-50A,RD(MAX)<80M@-10V,VTH
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252
P-Channel
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
4V @ 250µA
150 V
50A (Tc)
10V
80mOhm @ 5A, 10V
27 nC @ 4.5 V
±20V
96W (Tc)
-
G900P15D5
P-150V,-60A,RD(MAX)<80M@-10V,VTH
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-PowerTDFN
8-DFN (4.9x5.75)
P-Channel
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
4V @ 250µA
150 V
60A (Tc)
10V
80mOhm @ 5A, 10V
27 nC @ 10 V
±20V
100W (Tc)
-
G7K2N20HE
N200V, ESD,2A,RD<0.7@10V,VTH1V~2
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-261-4, TO-261AA
SOT-223
N-Channel
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
2.5V @ 250µA
200 V
2A (Tc)
4.5V, 10V
700mOhm @ 1A, 10V
10.8 nC @ 10 V
±20V
1.8W (Tc)
-
SIR646DP-T1-GE3
MOSFET N-CH 40V 60A PPAK SO-8
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
PowerPAK® SO-8
PowerPAK® SO-8
N-Channel
TrenchFET®
MOSFET (Metal Oxide)
-
2.2V @ 250µA
40 V
60A (Tc)
4.5V, 10V
3.8mOhm @ 20A, 10V
51 nC @ 10 V
±20V
5W (Ta), 54W (Tc)
SI8416DB-T1-GE3
MOSFET N-CH 8V 16A 6MICROFOOT
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
6-UFBGA
6-microfoot
N-Channel
TrenchFET®
MOSFET (Metal Oxide)
-
800mV @ 250µA
8 V
16A (Tc)
1.2V, 4.5V
23mOhm @ 1.5A, 4.5V
26 nC @ 4.5 V
±5V
2.77W (Ta), 13W (Tc)
G12P10TE
MOSFET P-CH ESD 100V 12A TO-220
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-220-3
TO-220
P-Channel
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
3V @ 250µA
-
12A (Tc)
10V
200mOhm @ 6A, 10V
-
±20V
40W (Tc)
-
G20P10KE
MOSFET P-CH ESD 100V 20A TO-252
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252
P-Channel
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
3V @ 250µA
-
20A (Tc)
10V
116mOhm @ 16A, 10V
-
±20V
69W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.