TrenchFET® Series, Single FETs, MOSFETs

Results:
2,392
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Supplier Device Package
Vgs(th) (Max) @ Id
Package / Case
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
Vgs (Max)
Operating Temperature
Mounting Type
FET Feature
FET Type
Grade
Qualification
Technology
Results remaining2,392
Applied Filters:
TrenchFET®
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypeDrain to Source Voltage (Vdss)GradeSeriesTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdPackage / CaseSupplier Device PackageDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
SIR862DP-T1-GE3
MOSFET N-CH 25V 50A PPAK SO-8
1+
$2.5352
5+
$2.3944
10+
$2.2535
Quantity
9,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
25 V
-
TrenchFET®
MOSFET (Metal Oxide)
-
50A (Tc)
2.3V @ 250µA
PowerPAK® SO-8
PowerPAK® SO-8
4.5V, 10V
2.8mOhm @ 15A, 10V
90 nC @ 10 V
±20V
3800 pF @ 10 V
5.2W (Ta), 69W (Tc)
-
SI5459DU-T1-GE3
MOSFET P-CH 20V 8A PPAK
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-50°C ~ 150°C (TJ)
P-Channel
20 V
-
TrenchFET®
MOSFET (Metal Oxide)
-
8A (Tc)
1.4V @ 250µA
PowerPAK® ChipFET™ Single
PowerPAK® ChipFET™ Single
2.5V, 4.5V
52mOhm @ 6.7A, 4.5V
26 nC @ 10 V
±12V
665 pF @ 10 V
3.5W (Ta), 10.9W (Tc)
-
SISA14DN-T1-GE3
MOSFET N-CH 30V 20A PPAK1212-8
1+
$0.5070
5+
$0.4789
10+
$0.4507
Quantity
95,990 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
30 V
-
TrenchFET®
MOSFET (Metal Oxide)
-
20A (Tc)
2.2V @ 250µA
PowerPAK® 1212-8
PowerPAK® 1212-8
4.5V, 10V
5.1mOhm @ 10A, 10V
29 nC @ 10 V
+20V, -16V
1450 pF @ 15 V
3.57W (Ta), 26.5W (Tc)
-
SQ3427EV-T1_GE3
MOSFET P-CH 60V 5.3A 6TSOP
1+
$0.3549
5+
$0.3352
10+
$0.3155
Quantity
1,506 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
P-Channel
60 V
Automotive
TrenchFET®
MOSFET (Metal Oxide)
-
5.3A (Tc)
2.5V @ 250µA
SOT-23-6 Thin, TSOT-23-6
6-TSOP
4.5V, 10V
95mOhm @ 4.5A, 10V
22 nC @ 10 V
±20V
1000 pF @ 30 V
5W (Tc)
AEC-Q101
SQ3495EV-T1_GE3
MOSFET P-CH 30V 8A 6TSOP
1+
$5.0704
5+
$4.7887
10+
$4.5070
Quantity
3,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
P-Channel
30 V
Automotive
TrenchFET®
MOSFET (Metal Oxide)
-
8A (Tc)
1.4V @ 250µA
SOT-23-6 Thin, TSOT-23-6
6-TSOP
2.5V, 10V
21mOhm @ 5A, 4.5V
41 nC @ 4.5 V
±12V
3950 pF @ 20 V
5W (Tc)
AEC-Q101
SI4134DY-T1-GE3
MOSFET N-CH 30V 14A 8SO
1+
$0.2231
5+
$0.2107
10+
$0.1983
Quantity
80,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
30 V
-
TrenchFET®
MOSFET (Metal Oxide)
-
14A (Tc)
2.5V @ 250µA
8-SOIC (0.154", 3.90mm Width)
8-SOIC
4.5V, 10V
14mOhm @ 10A, 10V
23 nC @ 10 V
±20V
846 pF @ 15 V
2.5W (Ta), 5W (Tc)
-
SQ3427AEEV-T1_GE3
MOSFET P-CH 60V 5.3A 6TSOP
1+
$0.3042
5+
$0.2873
10+
$0.2704
Quantity
24,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
P-Channel
60 V
Automotive
TrenchFET®
MOSFET (Metal Oxide)
-
5.3A (Tc)
2.5V @ 250µA
SOT-23-6 Thin, TSOT-23-6
6-TSOP
10V
95mOhm @ 4.5A, 10V
22 nC @ 10 V
±20V
1000 pF @ 30 V
5W (Tc)
AEC-Q101
SI4426DY-T1-E3
MOSFET N-CH 20V 6.5A 8SO
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
20 V
-
TrenchFET®
MOSFET (Metal Oxide)
-
6.5A (Ta)
1.4V @ 250µA
8-SOIC (0.154", 3.90mm Width)
8-SOIC
2.5V, 4.5V
25mOhm @ 8.5A, 4.5V
50 nC @ 4.5 V
±12V
-
1.5W (Ta)
-
SQD50P08-28-T4_GE3
MOSFET P-CH 80V 48A TO252AA
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
P-Channel
80 V
Automotive
TrenchFET®
MOSFET (Metal Oxide)
-
48A (Tc)
3.5V @ 250µA
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
10V
28mOhm @ 12.5A, 10V
145 nC @ 10 V
±20V
6035 pF @ 25 V
136W (Tc)
AEC-Q101
SQD40N10-25-T4_GE3
MOSFET N-CH 100V 40A TO252AA
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
100 V
Automotive
TrenchFET®
MOSFET (Metal Oxide)
-
40A (Tc)
2.5V @ 250µA
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
4.5V, 10V
25mOhm @ 40A, 10V
70 nC @ 10 V
±20V
3380 pF @ 25 V
136W (Tc)
AEC-Q101
SQD90P04_9M4LT4GE3
MOSFET P-CH 40V 90A TO252AA
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
P-Channel
40 V
Automotive
TrenchFET®
MOSFET (Metal Oxide)
-
90A (Tc)
2.5V @ 250µA
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
4.5V, 10V
9.4mOhm @ 17A, 10V
155 nC @ 10 V
±20V
6675 pF @ 20 V
136W (Tc)
AEC-Q101
SQD50P03-07-T4_GE3
MOSFET P-CH 30V 50A TO252AA
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
P-Channel
30 V
Automotive
TrenchFET®
MOSFET (Metal Oxide)
-
50A (Tc)
2.5V @ 250µA
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
4.5V, 10V
7mOhm @ 20A, 10V
146 nC @ 10 V
±20V
5490 pF @ 25 V
136W (Tc)
AEC-Q101
SQD25N15-52-T4_GE3
MOSFET N-CH 150V 25A TO252AA
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
150 V
Automotive
TrenchFET®
MOSFET (Metal Oxide)
-
25A (Tc)
4V @ 250µA
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
10V
52mOhm @ 15A, 10V
51 nC @ 10 V
±20V
2200 pF @ 25 V
107W (Tc)
AEC-Q101
SI7788DP-T1-GE3
MOSFET N-CH 30V 50A PPAK SO-8
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
30 V
-
TrenchFET®
MOSFET (Metal Oxide)
-
50A (Tc)
2.5V @ 250µA
PowerPAK® SO-8
PowerPAK® SO-8
4.5V, 10V
3.1mOhm @ 15A, 10V
125 nC @ 10 V
±20V
5370 pF @ 15 V
5.2W (Ta), 69W (Tc)
-
SIR5607DP-T1-RE3
P-CHANNEL 60 V (D-S) MOSFET POWE
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
60 V
-
TrenchFET®
MOSFET (Metal Oxide)
-
22.2A (Ta), 90.9A (Tc)
2.6V @ 250µA
PowerPAK® SO-8
PowerPAK® SO-8
4.5V, 10V
7mOhm @ 20A, 10V
112 nC @ 10 V
±20V
5020 pF @ 30 V
6.25W (Ta), 104W (Tc)
-
SUD19N20-90-T4-E3
MOSFET N-CH 200V 19A TO252
1+
$8.1127
5+
$7.6620
10+
$7.2113
Quantity
4,767 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
200 V
-
TrenchFET®
MOSFET (Metal Oxide)
-
19A (Tc)
4V @ 250µA
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
6V, 10V
90mOhm @ 5A, 10V
51 nC @ 10 V
±20V
1800 pF @ 25 V
3W (Ta), 136W (Tc)
-
SQM25N15-52_GE3
MOSFET N-CH 150V 25A TO263
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
150 V
Automotive
TrenchFET®
MOSFET (Metal Oxide)
-
25A (Tc)
4V @ 250µA
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
10V
52mOhm @ 15A, 10V
51 nC @ 10 V
±20V
2360 pF @ 25 V
107W (Tc)
AEC-Q101
SUD50P06-15L-T4-E3
MOSFET P-CH 60V 50A TO252
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
P-Channel
60 V
-
TrenchFET®
MOSFET (Metal Oxide)
-
50A (Tc)
3V @ 250µA
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
4.5V, 10V
15mOhm @ 17A, 10V
165 nC @ 10 V
±20V
4950 pF @ 25 V
3W (Ta), 136W (Tc)
-
SIS438DN-T1-GE3
MOSFET N-CH 20V 16A PPAK 1212-8
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
20 V
-
TrenchFET®
MOSFET (Metal Oxide)
-
16A (Tc)
2.3V @ 250µA
PowerPAK® 1212-8
PowerPAK® 1212-8
4.5V, 10V
9.5mOhm @ 10A, 10V
23 nC @ 10 V
±20V
880 pF @ 10 V
3.5W (Ta), 27.7W (Tc)
-
SI2328DS-T1-E3
MOSFET N-CH 100V 1.15A SOT23-3
1+
$0.8113
5+
$0.7662
10+
$0.7211
Quantity
35,400 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
100 V
-
TrenchFET®
MOSFET (Metal Oxide)
-
1.15A (Ta)
4V @ 250µA
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
10V
250mOhm @ 1.5A, 10V
5 nC @ 10 V
±20V
-
730mW (Ta)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.