NexFET™ Series, Single FETs, MOSFETs

Results:
242
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Vgs(th) (Max) @ Id
Supplier Device Package
Package / Case
Vgs (Max)
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
Operating Temperature
FET Feature
FET Type
Grade
Mounting Type
Qualification
Technology
Results remaining242
Applied Filters:
NexFET™
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypePackage / CaseDrain to Source Voltage (Vdss)GradeSeriesTechnologyFET FeatureVgs(th) (Max) @ IdCurrent - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Supplier Device PackageQualification
CSD17577Q3AT
MOSFET N-CH 30V 35A 8VSON
1+
$1.7696
5+
$1.6713
10+
$1.5730
Quantity
13,124 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
8-PowerVDFN
30 V
-
NexFET™
MOSFET (Metal Oxide)
-
1.8V @ 250µA
35A (Ta)
4.5V, 10V
4.8mOhm @ 16A, 10V
35 nC @ 10 V
±20V
2310 pF @ 15 V
2.8W (Ta), 53W (Tc)
8-VSONP (3x3.3)
-
CSD17575Q3T
MOSFET N-CH 30V 60A 8VSON
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
8-PowerTDFN
30 V
-
NexFET™
MOSFET (Metal Oxide)
-
1.8V @ 250µA
60A (Ta)
4.5V, 10V
2.3mOhm @ 25A, 10V
30 nC @ 4.5 V
±20V
4420 pF @ 15 V
2.8W (Ta), 108W (Tc)
8-VSON-CLIP (3.3x3.3)
-
CSD16327Q3T
MOSFET N-CH 25V 60A 8VSON
1+
$0.4563
5+
$0.4310
10+
$0.4056
Quantity
2,800 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
8-PowerTDFN
25 V
-
NexFET™
MOSFET (Metal Oxide)
-
1.4V @ 250µA
60A (Tc)
3V, 8V
4mOhm @ 24A, 8V
8.4 nC @ 4.5 V
+10V, -8V
1300 pF @ 12.5 V
74W (Tc)
8-VSON-CLIP (3.3x3.3)
-
CSD18504Q5AT
MOSFET N-CH 40V 50A 8VSON
1+
$3.0423
5+
$2.8732
10+
$2.7042
Quantity
3,230 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
8-PowerTDFN
40 V
-
NexFET™
MOSFET (Metal Oxide)
-
2.4V @ 250µA
50A (Ta)
4.5V, 10V
6.6mOhm @ 17A, 10V
9.2 nC @ 4.5 V
±20V
1656 pF @ 20 V
3.1W (Ta), 77W (Tc)
8-VSONP (5x6)
-
CSD22206WT
MOSFET P-CH 8V 5A 9DSBGA
1+
$0.5070
5+
$0.4789
10+
$0.4507
Quantity
21,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
9-UFBGA, DSBGA
8 V
-
NexFET™
MOSFET (Metal Oxide)
-
1.05V @ 250µA
5A (Ta)
2.5V, 4.5V
5.7mOhm @ 2A, 4.5V
14.6 nC @ 4.5 V
-6V
2275 pF @ 4 V
1.7W (Ta)
9-DSBGA
-
CSD25404Q3T
MOSFET P-CH 20V 104A 8VSON
1+
$2.0282
5+
$1.9155
10+
$1.8028
Quantity
3,609 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
8-PowerVDFN
20 V
-
NexFET™
MOSFET (Metal Oxide)
-
1.15V @ 250µA
104A (Tc)
1.8V, 4.5V
6.5mOhm @ 10A, 4.5V
14.1 nC @ 4.5 V
±12V
2120 pF @ 10 V
2.8W (Ta), 96W (Tc)
8-VSONP (3x3.3)
-
CSD17577Q5AT
MOSFET N-CH 30V 60A 8VSON
1+
$0.7606
5+
$0.7183
10+
$0.6761
Quantity
4,783 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
8-PowerTDFN
30 V
-
NexFET™
MOSFET (Metal Oxide)
-
1.8V @ 250µA
60A (Ta)
4.5V, 10V
4.2mOhm @ 18A, 10V
35 nC @ 10 V
±20V
2310 pF @ 15 V
3W (Ta), 53W (Tc)
8-VSONP (5x6)
-
CSD16340Q3T
MOSFET N-CH 25V 60A 8VSON
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
8-PowerTDFN
25 V
-
NexFET™
MOSFET (Metal Oxide)
-
1.1V @ 250µA
60A (Tc)
2.5V, 8V
4.5mOhm @ 20A, 8V
9.2 nC @ 4.5 V
+10V, -8V
1350 pF @ 12.5 V
3W (Ta)
8-VSON-CLIP (3.3x3.3)
-
CSD18510Q5B
MOSFET N-CH 40V 300A 8VSON
1+
$1.3944
5+
$1.3169
10+
$1.2394
Quantity
3,939 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
8-PowerTDFN
40 V
-
NexFET™
MOSFET (Metal Oxide)
-
2.3V @ 250µA
300A (Tc)
4.5V, 10V
0.96mOhm @ 32A, 10V
153 nC @ 10 V
±20V
11400 pF @ 20 V
156W (Tc)
8-VSON-CLIP (5x6)
-
CSD16401Q5
MOSFET N-CH 25V 38A/100A 8VSON
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
8-PowerTDFN
25 V
-
NexFET™
MOSFET (Metal Oxide)
-
1.9V @ 250µA
38A (Ta), 100A (Tc)
4.5V, 10V
1.6mOhm @ 40A, 10V
29 nC @ 4.5 V
+16V, -12V
4100 pF @ 12.5 V
3.1W (Ta)
8-VSON-CLIP (5x6)
-
CSD17322Q5A
MOSFET N-CH 30V 87A 8VSON
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
8-PowerTDFN
30 V
-
NexFET™
MOSFET (Metal Oxide)
-
2V @ 250µA
87A (Tc)
4.5V, 8V
8.8mOhm @ 14A, 8V
4.3 nC @ 4.5 V
±10V
695 pF @ 15 V
3W (Ta)
8-VSONP (5x6)
-
CSD17305Q5A
MOSFET N-CH 30V 29A/100A 8VSON
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
8-PowerTDFN
30 V
-
NexFET™
MOSFET (Metal Oxide)
-
1.6V @ 250µA
29A (Ta), 100A (Tc)
3V, 8V
3.4mOhm @ 30A, 8V
18.3 nC @ 4.5 V
+10V, -8V
2600 pF @ 15 V
3.1W (Ta)
8-VSONP (5x6)
-
CSD19538Q3A
MOSFET N-CH 100V 15A 8VSON
1+
$0.1394
5+
$0.1317
10+
$0.1239
Quantity
351,149 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
8-PowerVDFN
100 V
-
NexFET™
MOSFET (Metal Oxide)
-
3.8V @ 250µA
15A (Ta)
6V, 10V
59mOhm @ 5A, 10V
4.3 nC @ 10 V
±20V
454 pF @ 50 V
2.8W (Ta), 23W (Tc)
8-VSONP (3x3.3)
-
CSD25304W1015
MOSFET P-CH 20V 3A 6DSBGA
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
6-UFBGA, DSBGA
20 V
-
NexFET™
MOSFET (Metal Oxide)
-
1.15V @ 250µA
3A (Ta)
1.8V, 4.5V
32.5mOhm @ 1.5A, 4.5V
4.4 nC @ 4.5 V
±8V
595 pF @ 10 V
750mW (Ta)
6-DSBGA (1x1.5)
-
CSD23203W
MOSFET P-CH 8V 3A 6DSBGA
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
6-UFBGA, DSBGA
8 V
-
NexFET™
MOSFET (Metal Oxide)
-
1.1V @ 250µA
3A (Ta)
1.8V, 4.5V
19.4mOhm @ 1.5A, 4.5V
6.3 nC @ 4.5 V
-6V
914 pF @ 4 V
750mW (Ta)
6-DSBGA (1x1.5)
-
CSD22204W
MOSFET P-CH 8V 5A 9DSBGA
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
9-UFBGA, DSBGA
8 V
-
NexFET™
MOSFET (Metal Oxide)
-
950mV @ 250µA
5A (Ta)
2.5V, 4.5V
9.9mOhm @ 2A, 4.5V
24.6 nC @ 4.5 V
-6V
1130 pF @ 4 V
1.7W (Ta)
9-DSBGA
-
CSD25202W15
MOSFET P-CH 20V 4A 9DSBGA
1+
$0.5070
5+
$0.4789
10+
$0.4507
Quantity
5,683 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
9-UFBGA, DSBGA
20 V
-
NexFET™
MOSFET (Metal Oxide)
-
1.05V @ 250µA
4A (Ta)
1.8V, 4.5V
26mOhm @ 2A, 4.5V
7.5 nC @ 4.5 V
-6V
1010 pF @ 10 V
500mW (Ta)
9-DSBGA
-
CSD23202W10
MOSFET P-CH 12V 2.2A 4DSBGA
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
4-UFBGA, DSBGA
12 V
-
NexFET™
MOSFET (Metal Oxide)
-
900mV @ 250µA
2.2A (Ta)
1.5V, 4.5V
53mOhm @ 500mA, 4.5V
3.8 nC @ 4.5 V
-6V
512 pF @ 6 V
1W (Ta)
4-DSBGA (1x1)
-
CSD17581Q5A
MOSFET N-CH 30V 24A/123A 8VSON
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 155°C (TJ)
N-Channel
8-PowerTDFN
30 V
-
NexFET™
MOSFET (Metal Oxide)
-
1.7V @ 250µA
24A (Ta), 123A (Tc)
4.5V, 10V
3.4mOhm @ 16A, 10V
54 nC @ 10 V
±20V
3640 pF @ 15 V
3.1W (Ta), 83W (Tc)
8-VSONP (5x6)
-
CSD16412Q5A
MOSFET N-CH 25V 14A/52A 8VSON
1+
$3.2958
5+
$3.1127
10+
$2.9296
Quantity
13,250 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
8-PowerTDFN
25 V
-
NexFET™
MOSFET (Metal Oxide)
-
2.3V @ 250µA
14A (Ta), 52A (Tc)
4.5V, 10V
11mOhm @ 10A, 10V
3.8 nC @ 4.5 V
+16V, -12V
530 pF @ 12.5 V
3W (Ta)
8-VSONP (5x6)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.