NexFET™ Series, Single FETs, MOSFETs

Results:
242
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Vgs(th) (Max) @ Id
Supplier Device Package
Package / Case
Vgs (Max)
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
Operating Temperature
FET Feature
FET Type
Grade
Mounting Type
Qualification
Technology
Results remaining242
Applied Filters:
NexFET™
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypeDrain to Source Voltage (Vdss)GradePackage / CaseSeriesTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Supplier Device PackageQualification
CSD18537NQ5AT
MOSFET N-CH 60V 50A 8VSON
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
60 V
-
8-PowerTDFN
NexFET™
MOSFET (Metal Oxide)
-
50A (Tc)
3.5V @ 250µA
6V, 10V
13mOhm @ 12A, 10V
18 nC @ 10 V
±20V
1480 pF @ 30 V
3.2W (Ta), 75W (Tc)
8-VSONP (5x6)
-
CSD23203WT
MOSFET P-CH 8V 3A 6DSBGA
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
8 V
-
6-UFBGA, DSBGA
NexFET™
MOSFET (Metal Oxide)
-
3A (Ta)
1.1V @ 250µA
1.8V, 4.5V
19.4mOhm @ 1.5A, 4.5V
6.3 nC @ 4.5 V
-6V
914 pF @ 4 V
750mW (Ta)
6-DSBGA (1x1.5)
-
CSD17318Q2T
MOSFET N-CHANNEL 30V 25A 6WSON
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
30 V
-
6-WDFN Exposed Pad
NexFET™
MOSFET (Metal Oxide)
-
25A (Tc)
1.2V @ 250µA
2.5V, 8V
15.1mOhm @ 8A, 8V
6 nC @ 4.5 V
±10V
879 pF @ 15 V
16W (Tc)
6-WSON (2x2)
-
CSD16407Q5
MOSFET N-CH 25V 31A/100A 8VSON
1+
$0.8620
5+
$0.8141
10+
$0.7662
Quantity
10,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
25 V
-
8-PowerTDFN
NexFET™
MOSFET (Metal Oxide)
-
31A (Ta), 100A (Tc)
1.9V @ 250µA
4.5V, 10V
2.4mOhm @ 25A, 10V
18 nC @ 4.5 V
+16V, -12V
2660 pF @ 12.5 V
3.1W (Ta)
8-VSONP (5x6)
-
CSD18533KCS
MOSFET N-CH 60V 72A/100A TO220-3
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
N-Channel
60 V
-
TO-220-3
NexFET™
MOSFET (Metal Oxide)
-
72A (Ta), 100A (Tc)
2.3V @ 250µA
4.5V, 10V
6.3mOhm @ 75A, 10V
34 nC @ 10 V
±20V
3025 pF @ 30 V
192W (Tc)
TO-220-3
-
CSD17559Q5T
MOSFET N-CH 30V 100A 8VSON
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
30 V
-
8-PowerTDFN
NexFET™
MOSFET (Metal Oxide)
-
100A (Ta)
1.7V @ 250µA
4.5V, 10V
1.15mOhm @ 40A, 10V
51 nC @ 4.5 V
±20V
9200 pF @ 15 V
3.2W (Ta), 96W (Tc)
8-VSON-CLIP (5x6)
-
CSD18510KTTT
MOSFET N-CH 40V 274A DDPAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
40 V
-
TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
NexFET™
MOSFET (Metal Oxide)
-
274A (Tc)
2.3V @ 250µA
4.5V, 10V
2.6mOhm @ 100A, 10V
132 nC @ 10 V
±20V
11400 pF @ 15 V
250W (Ta)
TO-263 (DDPAK-3)
-
CSD18532NQ5BT
MOSFET N-CH 60V 100A 8VSON
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
60 V
-
8-PowerTDFN
NexFET™
MOSFET (Metal Oxide)
-
100A (Ta)
3.4V @ 250µA
6V, 10V
3.4mOhm @ 25A, 10V
64 nC @ 10 V
±20V
5340 pF @ 30 V
3.1W (Ta), 156W (Tc)
8-VSON-CLIP (5x6)
-
CSD18532Q5BT
MOSFET N-CH 60V 100A 8VSON
1+
$1.2676
5+
$1.1972
10+
$1.1268
Quantity
2,816 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
60 V
-
8-PowerTDFN
NexFET™
MOSFET (Metal Oxide)
-
100A (Ta)
2.2V @ 250µA
4.5V, 10V
3.2mOhm @ 25A, 10V
58 nC @ 10 V
±20V
5070 pF @ 30 V
3.2W (Ta), 156W (Tc)
8-VSONP (5x6)
-
CSD16401Q5T
MOSFET N-CH 25V 100A 8VSON
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
25 V
-
8-PowerTDFN
NexFET™
MOSFET (Metal Oxide)
-
100A (Ta)
1.9V @ 250µA
4.5V, 10V
1.6mOhm @ 40A, 10V
29 nC @ 4.5 V
+16V, -12V
4100 pF @ 12.5 V
3.1W (Ta)
8-VSON-CLIP (5x6)
-
CSD18536KCS
MOSFET N-CH 60V 200A TO220-3
1+
$8.8732
5+
$8.3803
10+
$7.8873
Quantity
979 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
N-Channel
60 V
-
TO-220-3
NexFET™
MOSFET (Metal Oxide)
-
200A (Ta)
2.2V @ 250µA
4.5V, 10V
1.6mOhm @ 100A, 10V
108 nC @ 10 V
±20V
11430 pF @ 30 V
375W (Tc)
TO-220-3
-
CSD19506KCS
MOSFET N-CH 80V 100A TO220-3
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
N-Channel
80 V
-
TO-220-3
NexFET™
MOSFET (Metal Oxide)
-
100A (Ta)
3.2V @ 250µA
6V, 10V
2.3mOhm @ 100A, 10V
156 nC @ 10 V
±20V
12200 pF @ 40 V
375W (Tc)
TO-220-3
-
CSD13202Q2T
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
12 V
-
6-WDFN Exposed Pad
NexFET™
MOSFET (Metal Oxide)
-
14.4A (Ta)
1.1V @ 250µA
2.5V, 4.5V
9.3mOhm @ 5A, 4.5V
6.6 nC @ 4.5 V
±8V
997 pF @ 6 V
2.7W (Ta)
6-WSON (2x2)
-
CSD16342Q5AT
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
25 V
-
8-PowerTDFN
NexFET™
MOSFET (Metal Oxide)
-
21A (Ta), 100A (Tc)
1.1V @ 250µA
2.5V, 8V
4.7mOhm @ 20A, 8V
7.1 nC @ 4.5 V
+10V, -8V
1350 pF @ 12.5 V
3W (Ta)
8-VSON (5x6)
-
CSD16411Q3T
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
25 V
-
8-PowerTDFN
NexFET™
MOSFET (Metal Oxide)
-
50A (Tc)
2.3V @ 250µA
4.5V, 10V
10mOhm @ 10A, 10V
3.8 nC @ 4.5 V
+16V, -12V
570 pF @ 12.5 V
35W (Tc)
8-VSON-CLIP (3.3x3.3)
-
CSD18537NQ5A-P
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
60 V
-
8-PowerTDFN
NexFET™
MOSFET (Metal Oxide)
-
11A (Ta), 54A (Tc)
3.5V @ 250µA
6V, 10V
13mOhm @ 12A, 10V
18 nC @ 10 V
±20V
1480 pF @ 30 V
3.2W (Ta), 75W (Tc)
8-VSON (5x6)
-
CSD16323Q3T
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
25 V
-
8-PowerTDFN
NexFET™
MOSFET (Metal Oxide)
-
20A (Ta), 105A (Tc)
1.4V @ 250µA
3V, 8V
4.5mOhm @ 24A, 8V
8.4 nC @ 4.5 V
+10V, -8V
1300 pF @ 12.5 V
2.8W (Ta), 74W (Tc)
8-VSON-CLIP (3.3x3.3)
-
CSD18563Q5A-P
60-V, N CHANNEL NEXFET POWER MOS
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
60 V
-
8-PowerTDFN
NexFET™
MOSFET (Metal Oxide)
-
15A (Ta), 93A (Tc)
2.4V @ 250µA
4.5V, 10V
6.8mOhm @ 18A, 10V
20 nC @ 10 V
±20V
1500 pF @ 30 V
3.2W (Ta), 116W (Tc)
8-VSON (5x6)
-
CSD17306Q5A
MOSFET N-CH 30V 24A/100A 8VSON
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
30 V
-
8-PowerTDFN
NexFET™
MOSFET (Metal Oxide)
-
24A (Ta), 100A (Tc)
1.6V @ 250µA
3V, 8V
3.7mOhm @ 22A, 8V
15.3 nC @ 4.5 V
+10V, -8V
2170 pF @ 15 V
3.2W (Ta)
8-VSONP (5x6)
-
CSD17579Q5AT
MOSFET N-CH 30V 25A 8VSON
1+
$1.3944
5+
$1.3169
10+
$1.2394
Quantity
7,850 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
30 V
-
8-PowerTDFN
NexFET™
MOSFET (Metal Oxide)
-
25A (Ta)
2V @ 250µA
4.5V, 10V
9.7mOhm @ 8A, 10V
15.1 nC @ 10 V
±20V
1030 pF @ 15 V
3.1W (Ta), 36W (Tc)
8-VSONP (5x6)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.