NexFET™ Series, Single FETs, MOSFETs

Results:
242
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Vgs(th) (Max) @ Id
Supplier Device Package
Package / Case
Vgs (Max)
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
Operating Temperature
FET Feature
FET Type
Grade
Mounting Type
Qualification
Technology
Results remaining242
Applied Filters:
NexFET™
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypePackage / CaseSupplier Device PackageFET TypeOperating TemperatureGradeSeriesTechnologyFET FeatureDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
CSD19535KCS
MOSFET N-CH 100V 150A TO220-3
1+
$50.7042
5+
$47.8873
10+
$45.0704
Quantity
3,939 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
TO-220-3
N-Channel
-55°C ~ 175°C (TJ)
-
NexFET™
MOSFET (Metal Oxide)
-
100 V
150A (Ta)
6V, 10V
3.6mOhm @ 100A, 10V
3.4V @ 250µA
101 nC @ 10 V
±20V
7930 pF @ 50 V
300W (Tc)
-
CSD19502Q5BT
MOSFET N-CH 80V 100A 8VSON
1+
$1.2676
5+
$1.1972
10+
$1.1268
Quantity
7,299 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerTDFN
8-VSON-CLIP (5x6)
N-Channel
-55°C ~ 150°C (TJ)
-
NexFET™
MOSFET (Metal Oxide)
-
80 V
100A (Ta)
6V, 10V
4.1mOhm @ 19A, 10V
3.3V @ 250µA
62 nC @ 10 V
±20V
4870 pF @ 40 V
3.1W (Ta), 195W (Tc)
-
CSD18510KCS
MOSFET N-CH 40V 200A TO220-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
TO-220-3
N-Channel
-55°C ~ 175°C (TJ)
-
NexFET™
MOSFET (Metal Oxide)
-
40 V
200A (Ta)
4.5V, 10V
1.7mOhm @ 100A, 10V
2.3V @ 250µA
75 nC @ 4.5 V
±20V
11400 pF @ 20 V
250W (Ta)
-
CSD13306WT
MOSFET N-CH 12V 3.5A 6DSBGA
1+
$6.5915
5+
$6.2254
10+
$5.8592
Quantity
4,246 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
6-UFBGA, DSBGA
6-DSBGA (1x1.5)
N-Channel
-55°C ~ 150°C (TJ)
-
NexFET™
MOSFET (Metal Oxide)
-
12 V
3.5A (Ta)
2.5V, 4.5V
10.2mOhm @ 1.5A, 4.5V
1.3V @ 250µA
11.2 nC @ 4.5 V
±10V
1370 pF @ 6 V
1.9W (Ta)
-
CSD17506Q5A
MOSFET N-CH 30V 100A 8VSON
1+
$3.4225
5+
$3.2324
10+
$3.0423
Quantity
9,313 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerTDFN
8-VSONP (5x6)
N-Channel
-55°C ~ 150°C (TJ)
-
NexFET™
MOSFET (Metal Oxide)
-
30 V
100A (Tc)
4.5V, 10V
4mOhm @ 20A, 10V
1.8V @ 250µA
11 nC @ 4.5 V
±20V
1650 pF @ 15 V
3.2W (Ta)
-
CSD17579Q3AT
MOSFET N-CH 30V 20A 8VSON
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerVDFN
8-VSONP (3x3.3)
N-Channel
-55°C ~ 150°C (TJ)
-
NexFET™
MOSFET (Metal Oxide)
-
30 V
20A (Ta)
4.5V, 10V
10.2mOhm @ 8A, 10V
1.9V @ 250µA
15 nC @ 10 V
±20V
998 pF @ 15 V
3.2W (Ta), 29W (Tc)
-
CSD19505KTT
MOSFET N-CH 80V 200A DDPAK
1+
$17.7465
5+
$16.7606
10+
$15.7746
Quantity
1,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
TO-263 (DDPAK-3)
N-Channel
-55°C ~ 175°C (TJ)
-
NexFET™
MOSFET (Metal Oxide)
-
80 V
200A (Ta)
6V, 10V
3.1mOhm @ 100A, 10V
3.2V @ 250µA
76 nC @ 10 V
±20V
7920 pF @ 40 V
300W (Tc)
-
CSD13302W
MOSFET N-CH 12V 1.6A 4DSBGA
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
4-UFBGA, DSBGA
4-DSBGA (1x1)
N-Channel
-55°C ~ 150°C (TJ)
-
NexFET™
MOSFET (Metal Oxide)
-
12 V
1.6A (Ta)
2.5V, 4.5V
17.1mOhm @ 1A, 4.5V
1.3V @ 250µA
7.8 nC @ 4.5 V
±10V
862 pF @ 6 V
1.8W (Ta)
-
CSD13306W
MOSFET N-CH 12V 3.5A 6DSBGA
1+
$0.6338
5+
$0.5986
10+
$0.5634
Quantity
6,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
6-UFBGA, DSBGA
6-DSBGA (1x1.5)
N-Channel
-55°C ~ 150°C (TJ)
-
NexFET™
MOSFET (Metal Oxide)
-
12 V
3.5A (Ta)
2.5V, 4.5V
10.2mOhm @ 1.5A, 4.5V
1.3V @ 250µA
11.2 nC @ 4.5 V
±10V
1370 pF @ 6 V
1.9W (Ta)
-
CSD19538Q2
MOSFET N-CH 100V 14.4A 6WSON
1+
$0.2789
5+
$0.2634
10+
$0.2479
Quantity
66,236 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
6-WDFN Exposed Pad
6-WSON (2x2)
N-Channel
-55°C ~ 150°C (TJ)
-
NexFET™
MOSFET (Metal Oxide)
-
100 V
14.4A (Ta)
6V, 10V
59mOhm @ 5A, 10V
3.8V @ 250µA
5.6 nC @ 10 V
±20V
454 pF @ 50 V
2.5W (Ta), 20.2W (Tc)
-
CSD17579Q3A
MOSFET N-CH 30V 20A 8VSON
1+
$1.2676
5+
$1.1972
10+
$1.1268
Quantity
17,560 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerVDFN
8-VSONP (3x3.3)
N-Channel
-55°C ~ 150°C (TJ)
-
NexFET™
MOSFET (Metal Oxide)
-
30 V
20A (Ta)
4.5V, 10V
10.2mOhm @ 8A, 10V
1.9V @ 250µA
15 nC @ 10 V
±20V
998 pF @ 15 V
3.2W (Ta), 29W (Tc)
-
CSD17577Q3A
MOSFET N-CH 30V 35A 8VSON
1+
$0.2028
5+
$0.1915
10+
$0.1803
Quantity
17,617 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerVDFN
8-VSONP (3x3.3)
N-Channel
-55°C ~ 150°C (TJ)
-
NexFET™
MOSFET (Metal Oxide)
-
30 V
35A (Ta)
4.5V, 10V
4.8mOhm @ 16A, 10V
1.8V @ 250µA
35 nC @ 10 V
±20V
2310 pF @ 15 V
2.8W (Ta), 53W (Tc)
-
CSD16410Q5A
MOSFET N-CH 25V 16A/59A 8VSON
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerTDFN
8-VSONP (5x6)
N-Channel
-55°C ~ 150°C (TJ)
-
NexFET™
MOSFET (Metal Oxide)
-
25 V
16A (Ta), 59A (Tc)
4.5V, 10V
8.5mOhm @ 17A, 10V
2.3V @ 250µA
5 nC @ 4.5 V
+16V, -12V
740 pF @ 12.5 V
3W (Ta)
-
CSD17552Q3A
MOSFET N-CH 30V 15A/60A 8SON
1+
$17.7465
5+
$16.7606
10+
$15.7746
Quantity
2,500 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerVDFN
8-VSONP (3x3.3)
N-Channel
-55°C ~ 150°C (TJ)
-
NexFET™
MOSFET (Metal Oxide)
-
30 V
15A (Ta), 60A (Tc)
4.5V, 10V
6mOhm @ 11A, 10V
1.9V @ 250µA
12 nC @ 4.5 V
±20V
2050 pF @ 15 V
2.6W (Ta)
-
CSD16404Q5A
MOSFET N-CH 25V 21A/81A 8VSON
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerTDFN
8-VSONP (5x6)
N-Channel
-55°C ~ 150°C (TJ)
-
NexFET™
MOSFET (Metal Oxide)
-
25 V
21A (Ta), 81A (Tc)
4.5V, 10V
5.1mOhm @ 20A, 10V
2.1V @ 250µA
8.5 nC @ 4.5 V
+16V, -12V
1220 pF @ 12.5 V
3W (Ta)
-
CSD16322Q5
MOSFET N-CH 25V 21A/97A 8VSON
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerTDFN
8-VSON-CLIP (5x6)
N-Channel
-55°C ~ 150°C (TJ)
-
NexFET™
MOSFET (Metal Oxide)
-
25 V
21A (Ta), 97A (Tc)
3V, 8V
5mOhm @ 20A, 8V
1.4V @ 250µA
9.7 nC @ 4.5 V
+10V, -8V
1365 pF @ 12.5 V
3.1W (Ta)
-
CSD17553Q5A
MOSFET N-CH 30V 23.5A/100A 8VSON
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerTDFN
8-VSONP (5x6)
N-Channel
-55°C ~ 150°C (TJ)
-
NexFET™
MOSFET (Metal Oxide)
-
30 V
23.5A (Ta), 100A (Tc)
4.5V, 10V
3.1mOhm @ 20A, 10V
1.9V @ 250µA
21.5 nC @ 4.5 V
±20V
3252 pF @ 15 V
3.1W (Ta)
-
CSD23202W10T
MOSFET P-CH 12V 2.2A 4DSBGA
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
4-UFBGA, DSBGA
4-DSBGA (1x1)
P-Channel
-55°C ~ 150°C (TJ)
-
NexFET™
MOSFET (Metal Oxide)
-
12 V
2.2A (Ta)
1.5V, 4.5V
53mOhm @ 500mA, 4.5V
900mV @ 250µA
3.8 nC @ 4.5 V
-6V
512 pF @ 6 V
1W (Ta)
-
CSD17581Q5AT
MOSFET N-CH 30V 24A/123A 8VSON
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerTDFN
8-VSONP (5x6)
N-Channel
-55°C ~ 150°C (TJ)
-
NexFET™
MOSFET (Metal Oxide)
-
30 V
24A (Ta), 123A (Tc)
4.5V, 10V
3.4mOhm @ 16A, 10V
1.7V @ 250µA
54 nC @ 10 V
±20V
3640 pF @ 15 V
3.1W (Ta), 83W (Tc)
-
CSD22205LT
MOSFET P-CH 8V 7.4A 4PICOSTAR
1+
$0.2561
5+
$0.2418
10+
$0.2276
Quantity
5,666 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
4-XFLGA
4-PICOSTAR
P-Channel
-55°C ~ 150°C (TJ)
-
NexFET™
MOSFET (Metal Oxide)
-
8 V
7.4A (Ta)
1.5V, 4.5V
9.9mOhm @ 1A, 4.5V
1.05V @ 250µA
8.5 nC @ 4.5 V
-6V
1390 pF @ 4 V
600mW (Ta)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.