TrenchMOS™ Series, Single FETs, MOSFETs

Results:
1,020
Manufacturer
Series
Input Capacitance (Ciss) (Max) @ Vds
Rds On (Max) @ Id, Vgs
Gate Charge (Qg) (Max) @ Vgs
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Vgs(th) (Max) @ Id
Supplier Device Package
Package / Case
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
Vgs (Max)
Operating Temperature
FET Feature
Qualification
FET Type
Grade
Mounting Type
Technology
Results remaining1,020
Applied Filters:
TrenchMOS™
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypePackage / CaseFET TypeSupplier Device PackageOperating TemperatureGradeSeriesTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
PHP23NQ11T,127
NEXPERIA PHP23NQ11T 23A, 110V, 0
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
N-Channel
TO-220AB
-55°C ~ 175°C (TJ)
-
TrenchMOS™
MOSFET (Metal Oxide)
-
23A (Tc)
4V @ 1mA
110 V
10V
70mOhm @ 13A, 10V
22 nC @ 10 V
±20V
830 pF @ 25 V
100W (Tc)
-
PHP27NQ11T,127
MOSFET N-CH 110V 27.6A TO220AB
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
N-Channel
TO-220AB
-55°C ~ 175°C (TJ)
-
TrenchMOS™
MOSFET (Metal Oxide)
-
27.6A (Tc)
4V @ 1mA
110 V
10V
50mOhm @ 14A, 10V
30 nC @ 10 V
±20V
1240 pF @ 25 V
107W (Tc)
-
PHP29N08T,127
MOSFET N-CH 75V 27A TO220AB
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
N-Channel
TO-220AB
-55°C ~ 175°C (TJ)
-
TrenchMOS™
MOSFET (Metal Oxide)
-
27A (Tc)
5V @ 2mA
75 V
11V
50mOhm @ 14A, 11V
19 nC @ 10 V
±30V
810 pF @ 25 V
88W (Tc)
-
PHP45NQ10T,127
NEXPERIA PHP45NQ10T - 47A, 100V,
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
N-Channel
TO-220AB
-55°C ~ 175°C (TJ)
-
TrenchMOS™
MOSFET (Metal Oxide)
-
47A (Tc)
4V @ 1mA
100 V
10V
25mOhm @ 25A, 10V
61 nC @ 10 V
±20V
2600 pF @ 25 V
150W (Tc)
-
PMK50XP,518
MOSFET P-CH 20V 7.9A 8SO
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
8-SOIC (0.154", 3.90mm Width)
P-Channel
8-SO
-55°C ~ 150°C (TJ)
-
TrenchMOS™
MOSFET (Metal Oxide)
-
7.9A (Tc)
950mV @ 250µA
20 V
4.5V
50mOhm @ 2.8A, 4.5V
10 nC @ 4.5 V
±12V
1020 pF @ 20 V
5W (Tc)
-
PSMN009-100P,127
MOSFET N-CH 100V 75A TO220AB
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
N-Channel
TO-220AB
-55°C ~ 175°C (TJ)
-
TrenchMOS™
MOSFET (Metal Oxide)
-
75A (Tc)
4V @ 1mA
100 V
10V
8.8mOhm @ 25A, 10V
156 nC @ 10 V
±20V
8250 pF @ 25 V
230W (Tc)
-
PSMN070-200P,127
MOSFET N-CH 200V 35A TO220AB
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
N-Channel
TO-220AB
-55°C ~ 175°C (TJ)
-
TrenchMOS™
MOSFET (Metal Oxide)
-
35A (Tc)
4V @ 1mA
200 V
10V
70mOhm @ 17A, 10V
77 nC @ 10 V
±20V
4570 pF @ 25 V
250W (Tc)
-
PSMN035-150P,127
MOSFET N-CH 150V 50A TO220AB
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
N-Channel
TO-220AB
-55°C ~ 175°C (TJ)
-
TrenchMOS™
MOSFET (Metal Oxide)
-
50A (Tc)
4V @ 1mA
150 V
10V
35mOhm @ 25A, 10V
79 nC @ 10 V
±20V
4720 pF @ 25 V
250W (Tc)
-
PSMN085-150K,518
MOSFET N-CH 150V 3.5A 8SO
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
8-SOIC (0.154", 3.90mm Width)
N-Channel
8-SO
-55°C ~ 150°C (TJ)
-
TrenchMOS™
MOSFET (Metal Oxide)
-
3.5A (Tc)
4V @ 1mA
150 V
10V
85mOhm @ 3.5A, 10V
40 nC @ 10 V
±20V
1310 pF @ 25 V
3.5W (Tc)
-
BSS138P,215
MOSFET N-CH 60V 360MA TO236AB
1+
¥0.0177
5+
¥0.0168
10+
¥0.0158
Quantity
234,768 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-236-3, SC-59, SOT-23-3
N-Channel
TO-236AB
-55°C ~ 150°C (TA)
Automotive
TrenchMOS™
MOSFET (Metal Oxide)
-
360mA (Ta)
1.5V @ 250µA
60 V
10V
1.6Ohm @ 300mA, 10V
0.8 nC @ 4.5 V
±20V
50 pF @ 10 V
350mW (Ta), 1.14W (Tc)
AEC-Q101
BSS84AK,215
MOSFET P-CH 50V 180MA TO236AB
1+
¥0.0254
5+
¥0.0239
10+
¥0.0225
Quantity
135,186 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-236-3, SC-59, SOT-23-3
P-Channel
TO-236AB
-55°C ~ 150°C (TJ)
Automotive
TrenchMOS™
MOSFET (Metal Oxide)
-
180mA (Ta)
2.1V @ 250µA
50 V
10V
7.5Ohm @ 100mA, 10V
0.35 nC @ 5 V
±20V
36 pF @ 25 V
350mW (Ta), 1.14W (Tc)
AEC-Q101
PMPB08R6ENX
MOSFET N-CH 30V 11A DFN2020M-6
1+
¥3.8028
5+
¥3.5915
10+
¥3.3803
Quantity
2,640 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
6-UDFN Exposed Pad
N-Channel
DFN2020MD-6
-55°C ~ 150°C (TJ)
-
TrenchMOS™
MOSFET (Metal Oxide)
-
11A (Ta)
2V @ 250µA
30 V
-
10.5mOhm @ 11A, 10V
20.6 nC @ 10 V
±20V
840 pF @ 15 V
1.9W (Ta), 12.5W (Tc)
-
BUK9875-100A,115
MOSFET N-CH 100V 7A SOT-223
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-261-4, TO-261AA
N-Channel
SC-73
-55°C ~ 150°C (TJ)
Automotive
TrenchMOS™
MOSFET (Metal Oxide)
-
7A (Tc)
2V @ 1mA
100 V
4.5V, 10V
72mOhm @ 8A, 10V
-
±10V
1690 pF @ 25 V
8W (Tc)
AEC-Q101
BUK6C2R1-55C,118
MOSFET N-CH 55V 228A D2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-7, D²Pak (6 Leads + Tab)
N-Channel
D2PAK-7
-55°C ~ 175°C (TJ)
Automotive
TrenchMOS™
MOSFET (Metal Oxide)
-
228A (Tc)
2.8V @ 1mA
55 V
10V
2.3mOhm @ 90A, 10V
253 nC @ 10 V
±16V
16000 pF @ 25 V
300W (Tc)
AEC-Q101
BUK9840-55,115
MOSFET N-CH 55V 5A SOT223
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-261-4, TO-261AA
N-Channel
SOT-223
-55°C ~ 150°C (TJ)
Automotive
TrenchMOS™
MOSFET (Metal Oxide)
-
5A (Ta)
2V @ 1mA
55 V
5V
40mOhm @ 5A, 5V
-
±10V
1400 pF @ 25 V
1.8W (Ta)
AEC-Q101
PHD71NQ03LT,118
MOSFET N-CH 30V 75A DPAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
N-Channel
DPAK
-55°C ~ 175°C (TJ)
-
TrenchMOS™
MOSFET (Metal Oxide)
-
75A (Tc)
2.5V @ 1mA
30 V
5V, 10V
10mOhm @ 25A, 10V
13.2 nC @ 5 V
±20V
1220 pF @ 25 V
120W (Tc)
-
BUK6C3R3-75C,118
MOSFET N-CH 75V 181A D2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-7, D²Pak (6 Leads + Tab)
N-Channel
D2PAK-7
-55°C ~ 175°C (TJ)
Automotive
TrenchMOS™
MOSFET (Metal Oxide)
-
181A (Tc)
2.8V @ 1mA
75 V
10V
3.4mOhm @ 90A, 10V
253 nC @ 10 V
±16V
15800 pF @ 25 V
300W (Tc)
AEC-Q101
BSS123/LF1R
MOSFET N-CH 100V 150MA TO236AB
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-236-3, SC-59, SOT-23-3
N-Channel
TO-236AB
-55°C ~ 150°C (TJ)
-
TrenchMOS™
MOSFET (Metal Oxide)
-
150mA (Ta)
2.8V @ 1mA
100 V
10V
6Ohm @ 120mA, 10V
-
±20V
40 pF @ 25 V
250mW (Ta)
-
2N7002CKVL
MOSFET N-CH 60V 300MA TO236AB
1+
¥0.1394
5+
¥0.1317
10+
¥0.1239
Quantity
79 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-236-3, SC-59, SOT-23-3
N-Channel
TO-236AB
150°C (TJ)
Automotive
TrenchMOS™
MOSFET (Metal Oxide)
-
300mA (Ta)
2.5V @ 250µA
60 V
4.5V, 10V
1.6Ohm @ 500mA, 10V
1.3 nC @ 4.5 V
±20V
55 pF @ 25 V
350mW (Ta)
AEC-Q101
PMCM440VNE/S500Z
MOSFET N-CHANNEL 12V 5A 4WLCSP
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
4-XFBGA, WLCSP
N-Channel
4-WLCSP (0.78x0.78)
-55°C ~ 150°C (TJ)
-
TrenchMOS™
MOSFET (Metal Oxide)
-
5A (Ta)
900mV @ 250µA
12 V
1.5V, 4.5V
67mOhm @ 3A, 4.5V
8.2 nC @ 4.5 V
±8V
360 pF @ 6 V
12.5W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.