TrenchMOS™ Series, Single FETs, MOSFETs

Results:
1,022
Manufacturer
Series
Input Capacitance (Ciss) (Max) @ Vds
Rds On (Max) @ Id, Vgs
Gate Charge (Qg) (Max) @ Vgs
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Vgs(th) (Max) @ Id
Supplier Device Package
Package / Case
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
Vgs (Max)
Operating Temperature
FET Feature
Qualification
FET Type
Grade
Mounting Type
Technology
Results remaining1,022
Applied Filters:
TrenchMOS™
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeFET TypePackage / CaseSupplier Device PackageDrain to Source Voltage (Vdss)Operating TemperatureSeriesTechnologyFET FeatureVgs(th) (Max) @ IdCurrent - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)QualificationGrade
BUK965R4-40E,118
MOSFET N-CH 40V 75A D2PAK
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
D2PAK
40 V
-55°C ~ 175°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
2.1V @ 1mA
75A (Tc)
5V
4.4mOhm @ 25A, 10V
33.9 nC @ 5 V
±10V
4483 pF @ 25 V
137W (Tc)
AEC-Q101
Automotive
NX7002BKMBYL
NEXPERIA NX7002B - 60V, N-CHANNE
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
3-XFDFN
DFN1006B-3
60 V
-55°C ~ 150°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
2.1V @ 250µA
350mA (Ta)
5V, 10V
2.8Ohm @ 200mA, 10V
1 nC @ 10 V
±20V
23.6 pF @ 10 V
350mW (Ta), 3.1W (Tc)
-
-
PH2525L,115
MOSFET N-CH 25V 100A LFPAK56
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
SC-100, SOT-669
LFPAK56, Power-SO8
25 V
-55°C ~ 150°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
2.15V @ 1mA
100A (Tc)
4.5V, 10V
2.5mOhm @ 25A, 10V
34.7 nC @ 4.5 V
±20V
4470 pF @ 12 V
62.5W (Tc)
-
-
PH3120L,115
MOSFET N-CH 20V 100A LFPAK56
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
SC-100, SOT-669
LFPAK56, Power-SO8
20 V
-55°C ~ 150°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
2V @ 1mA
100A (Tc)
4.5V, 10V
2.65mOhm @ 25A, 10V
48.5 nC @ 4.5 V
±20V
4457 pF @ 10 V
62.5W (Tc)
-
-
PHB29N08T,118
MOSFET N-CH 75V 27A D2PAK
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
D2PAK
75 V
-55°C ~ 175°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
5V @ 2mA
27A (Tc)
11V
50mOhm @ 14A, 11V
19 nC @ 10 V
±30V
810 pF @ 25 V
88W (Tc)
-
-
PHD71NQ03LT,118
MOSFET N-CH 30V 75A DPAK
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
30 V
-55°C ~ 175°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
2.5V @ 1mA
75A (Tc)
5V, 10V
10mOhm @ 25A, 10V
13.2 nC @ 5 V
±20V
1220 pF @ 25 V
120W (Tc)
-
-
PHK31NQ03LT,518
MOSFET N-CH 30V 30.4A 8SO
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-SOIC (0.154", 3.90mm Width)
8-SO
30 V
-55°C ~ 150°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
2.15V @ 1mA
30.4A (Tc)
4.5V, 10V
4.4mOhm @ 25A, 10V
33 nC @ 4.5 V
±20V
4235 pF @ 12 V
6.9W (Tc)
-
-
PHK12NQ03LT,518
MOSFET N-CH 30V 11.8A 8SO
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-SOIC (0.154", 3.90mm Width)
8-SO
30 V
-55°C ~ 150°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
2V @ 250µA
11.8A (Tj)
4.5V, 10V
10.5mOhm @ 12A, 10V
17.6 nC @ 5 V
±20V
1335 pF @ 16 V
2.5W (Ta)
-
-
PHP20NQ20T,127
NEXPERIA PHP20NQ20T - 20A, 200V,
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
TO-220AB
200 V
-55°C ~ 175°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
4V @ 1mA
20A (Tc)
10V
130mOhm @ 10A, 10V
65 nC @ 10 V
±20V
2470 pF @ 25 V
150W (Tc)
-
-
PHP20N06T,127
NEXPERIA PHP20N06T - 20.3A, 55V,
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
TO-220AB
55 V
-55°C ~ 175°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
4V @ 1mA
20.3A (Tc)
10V
75mOhm @ 10A, 10V
11 nC @ 10 V
±20V
483 pF @ 25 V
62W (Tc)
-
-
PHP23NQ11T,127
NEXPERIA PHP23NQ11T 23A, 110V, 0
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
TO-220AB
110 V
-55°C ~ 175°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
4V @ 1mA
23A (Tc)
10V
70mOhm @ 13A, 10V
22 nC @ 10 V
±20V
830 pF @ 25 V
100W (Tc)
-
-
PHP27NQ11T,127
MOSFET N-CH 110V 27.6A TO220AB
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
TO-220AB
110 V
-55°C ~ 175°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
4V @ 1mA
27.6A (Tc)
10V
50mOhm @ 14A, 10V
30 nC @ 10 V
±20V
1240 pF @ 25 V
107W (Tc)
-
-
PHP29N08T,127
MOSFET N-CH 75V 27A TO220AB
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
TO-220AB
75 V
-55°C ~ 175°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
5V @ 2mA
27A (Tc)
11V
50mOhm @ 14A, 11V
19 nC @ 10 V
±30V
810 pF @ 25 V
88W (Tc)
-
-
PHP45NQ10T,127
NEXPERIA PHP45NQ10T - 47A, 100V,
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
TO-220AB
100 V
-55°C ~ 175°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
4V @ 1mA
47A (Tc)
10V
25mOhm @ 25A, 10V
61 nC @ 10 V
±20V
2600 pF @ 25 V
150W (Tc)
-
-
PMK50XP,518
MOSFET P-CH 20V 7.9A 8SO
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
8-SOIC (0.154", 3.90mm Width)
8-SO
20 V
-55°C ~ 150°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
950mV @ 250µA
7.9A (Tc)
4.5V
50mOhm @ 2.8A, 4.5V
10 nC @ 4.5 V
±12V
1020 pF @ 20 V
5W (Tc)
-
-
PSMN009-100P,127
MOSFET N-CH 100V 75A TO220AB
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
TO-220AB
100 V
-55°C ~ 175°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
4V @ 1mA
75A (Tc)
10V
8.8mOhm @ 25A, 10V
156 nC @ 10 V
±20V
8250 pF @ 25 V
230W (Tc)
-
-
PSMN070-200P,127
MOSFET N-CH 200V 35A TO220AB
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
TO-220AB
200 V
-55°C ~ 175°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
4V @ 1mA
35A (Tc)
10V
70mOhm @ 17A, 10V
77 nC @ 10 V
±20V
4570 pF @ 25 V
250W (Tc)
-
-
PSMN035-150P,127
MOSFET N-CH 150V 50A TO220AB
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
TO-220AB
150 V
-55°C ~ 175°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
4V @ 1mA
50A (Tc)
10V
35mOhm @ 25A, 10V
79 nC @ 10 V
±20V
4720 pF @ 25 V
250W (Tc)
-
-
PSMN085-150K,518
MOSFET N-CH 150V 3.5A 8SO
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-SOIC (0.154", 3.90mm Width)
8-SO
150 V
-55°C ~ 150°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
4V @ 1mA
3.5A (Tc)
10V
85mOhm @ 3.5A, 10V
40 nC @ 10 V
±20V
1310 pF @ 25 V
3.5W (Tc)
-
-
PSMN009-100B,118
MOSFET N-CH 100V 75A D2PAK
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
D2PAK
100 V
-55°C ~ 175°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
4V @ 1mA
75A (Tc)
10V
8.8mOhm @ 25A, 10V
156 nC @ 10 V
±20V
8250 pF @ 25 V
230W (Tc)
-
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.