TrenchMOS™ Series, Single FETs, MOSFETs

Results:
1,020
Manufacturer
Series
Input Capacitance (Ciss) (Max) @ Vds
Rds On (Max) @ Id, Vgs
Gate Charge (Qg) (Max) @ Vgs
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Vgs(th) (Max) @ Id
Supplier Device Package
Package / Case
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
Vgs (Max)
Operating Temperature
FET Feature
Qualification
FET Type
Grade
Mounting Type
Technology
Results remaining1,020
Applied Filters:
TrenchMOS™
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeFET TypePackage / CaseSupplier Device PackageDrain to Source Voltage (Vdss)Operating TemperatureSeriesTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)QualificationGrade
BUK663R2-40C,118
MOSFET N-CH 40V 100A D2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
D2PAK
40 V
-55°C ~ 175°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
100A (Tc)
2.8V @ 1mA
10V
3.2mOhm @ 25A, 10V
125 nC @ 10 V
±16V
8020 pF @ 25 V
204W (Tc)
AEC-Q101
Automotive
BUK6C3R3-75C,118
MOSFET N-CH 75V 181A D2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-7, D²Pak (6 Leads + Tab)
D2PAK-7
75 V
-55°C ~ 175°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
181A (Tc)
2.8V @ 1mA
10V
3.4mOhm @ 90A, 10V
253 nC @ 10 V
±16V
15800 pF @ 25 V
300W (Tc)
AEC-Q101
Automotive
BUK6E2R3-40C,127
MOSFET N-CH 40V 120A I2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-262-3 Long Leads, I²Pak, TO-262AA
I2PAK
40 V
-55°C ~ 175°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
120A (Tc)
2.8V @ 1mA
10V
2.3mOhm @ 25A, 10V
260 nC @ 10 V
±16V
15100 pF @ 25 V
306W (Tc)
AEC-Q101
Automotive
BUK6E3R2-55C,127
MOSFET N-CH 55V 120A I2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-262-3 Long Leads, I²Pak, TO-262AA
I2PAK
55 V
-55°C ~ 175°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
120A (Tc)
2.8V @ 1mA
10V
3.2mOhm @ 25A, 10V
258 nC @ 10 V
±16V
15300 pF @ 25 V
306W (Tc)
AEC-Q101
Automotive
BUK7107-55AIE,118
MOSFET N-CH 55V 75A SOT426
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
D2PAK
55 V
-55°C ~ 175°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
Current Sensing
75A (Tc)
4V @ 1mA
10V
7mOhm @ 50A, 10V
116 nC @ 10 V
±20V
4500 pF @ 25 V
272W (Tc)
AEC-Q101
Automotive
BUK7108-40AIE,118
MOSFET N-CH 40V 75A SOT426
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
D2PAK
40 V
-55°C ~ 175°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
Current Sensing
75A (Tc)
4V @ 1mA
10V
8mOhm @ 50A, 10V
84 nC @ 10 V
±20V
3140 pF @ 25 V
221W (Tc)
AEC-Q101
Automotive
BUK7225-55A,118
MOSFET N-CH 55V 43A DPAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
55 V
-55°C ~ 175°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
43A (Tc)
4V @ 1mA
10V
25mOhm @ 25A, 10V
-
±20V
1310 pF @ 25 V
94W (Tc)
AEC-Q101
Automotive
BUK7509-55A,127
MOSFET N-CH 55V 75A TO220AB
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
TO-220AB
55 V
-55°C ~ 175°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
75A (Tc)
4V @ 1mA
10V
9mOhm @ 25A, 10V
62 nC @ 0 V
±20V
3271 pF @ 25 V
211W (Tc)
AEC-Q101
Automotive
BUK7509-55A,127
NEXPERIA BUK7509-55A - 75A, 55V,
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
TO-220AB
55 V
-55°C ~ 175°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
75A (Tc)
4V @ 1mA
10V
9mOhm @ 25A, 10V
62 nC @ 0 V
±20V
3271 pF @ 25 V
211W (Tc)
AEC-Q101
Automotive
BUK752R3-40E,127
MOSFET N-CH 40V 120A TO220AB
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
TO-220AB
40 V
-55°C ~ 175°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
120A (Tc)
4V @ 1mA
10V
2.3mOhm @ 25A, 10V
109.2 nC @ 10 V
±20V
8500 pF @ 25 V
293W (Tc)
AEC-Q101
Automotive
BUK753R8-80E,127
MOSFET N-CH 80V 120A TO220AB
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
TO-220AB
80 V
-55°C ~ 175°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
120A (Tc)
4V @ 1mA
10V
4mOhm @ 25A, 10V
169 nC @ 10 V
±20V
12030 pF @ 25 V
349W (Tc)
AEC-Q101
Automotive
BUK7608-40B,118
MOSFET N-CH 40V 75A D2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
D2PAK
40 V
-55°C ~ 175°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
75A (Tc)
4V @ 1mA
10V
8mOhm @ 25A, 10V
36 nC @ 10 V
±20V
2689 pF @ 25 V
157W (Tc)
AEC-Q101
Automotive
BUK7620-100A,118
MOSFET N-CH 100V 63A D2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
D2PAK
100 V
-55°C ~ 175°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
63A (Tc)
4V @ 1mA
10V
20mOhm @ 25A, 10V
-
±20V
4373 pF @ 25 V
200W (Tc)
AEC-Q101
Automotive
BUK7635-100A,118
MOSFET N-CH 100V 41A D2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
D2PAK
100 V
-55°C ~ 175°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
41A (Tc)
4V @ 1mA
10V
35mOhm @ 25A, 10V
-
±20V
2535 pF @ 25 V
149W (Tc)
AEC-Q101
Automotive
BUK763R1-40B,118
MOSFET N-CH 40V 75A D2PAK
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
D2PAK
40 V
-55°C ~ 175°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
75A (Tc)
4V @ 1mA
10V
3.1mOhm @ 25A, 10V
94 nC @ 10 V
±20V
6808 pF @ 25 V
300W (Tc)
AEC-Q101
Automotive
BUK7660-100A,118
MOSFET N-CH 100V 26A D2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
D2PAK
100 V
-55°C ~ 175°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
26A (Tc)
4V @ 1mA
10V
60mOhm @ 15A, 10V
-
±20V
1377 pF @ 25 V
106W (Tc)
AEC-Q101
Automotive
BUK769R6-80E,118
MOSFET N-CH 80V 75A D2PAK
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
D2PAK
80 V
-55°C ~ 175°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
75A (Tc)
4V @ 1mA
10V
9.6mOhm @ 20A, 10V
59.8 nC @ 10 V
±20V
4682 pF @ 25 V
182W (Tc)
AEC-Q101
Automotive
BUK7675-55A,118
MOSFET N-CH 55V 20.3A D2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
D2PAK
55 V
-55°C ~ 175°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
20.3A (Tc)
4V @ 1mA
10V
75mOhm @ 10A, 10V
-
±20V
483 pF @ 25 V
62W (Tc)
AEC-Q101
Automotive
BUK7C10-75AITE,118
MOSFET N-CH 75V 75A D2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-7, D²Pak (6 Leads + Tab)
D2PAK-7
75 V
-55°C ~ 175°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
Current Sensing
75A (Tc)
4V @ 1mA
10V
10mOhm @ 50A, 10V
121 nC @ 10 V
±20V
4700 pF @ 25 V
272W (Tc)
AEC-Q101
Automotive
BUK7C06-40AITE,118
MOSFET N-CH 40V 75A D2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-7, D²Pak (6 Leads + Tab)
D2PAK-7
40 V
-55°C ~ 175°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
Current Sensing
75A (Tc)
4V @ 1mA
10V
6mOhm @ 50A, 10V
120 nC @ 10 V
±20V
4300 pF @ 25 V
272W (Tc)
AEC-Q101
Automotive

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.