TrenchMOS™ Series, Single FETs, MOSFETs

Results:
1,022
Manufacturer
Series
Input Capacitance (Ciss) (Max) @ Vds
Rds On (Max) @ Id, Vgs
Gate Charge (Qg) (Max) @ Vgs
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Vgs(th) (Max) @ Id
Supplier Device Package
Package / Case
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
Vgs (Max)
Operating Temperature
FET Feature
Qualification
FET Type
Grade
Mounting Type
Technology
Results remaining1,022
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TrenchMOS™
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeFET TypePackage / CaseSupplier Device PackageDrain to Source Voltage (Vdss)Operating TemperatureSeriesTechnologyFET FeatureVgs(th) (Max) @ IdCurrent - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Gate Charge (Qg) (Max) @ Vgs
BUK7614-55,118
MOSFET N-CH 55V 68A D2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
D2PAK
55 V
-55°C ~ 175°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
4V @ 1mA
68A (Tc)
10V
14mOhm @ 25A, 10V
±16V
2900 pF @ 25 V
142W (Tc)
-
BUK958R5-40E,127
MOSFET N-CH 40V 75A TO220AB
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
TO-220AB
40 V
-55°C ~ 175°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
2.1V @ 1mA
75A (Tc)
5V, 10V
6.6mOhm @ 20A, 10V
±10V
2600 pF @ 25 V
96W (Tc)
20.9 nC @ 5 V
PHP96NQ03LT,127
MOSFET N-CH 25V 75A TO220AB
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
TO-220AB
25 V
-55°C ~ 175°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
2V @ 1mA
75A (Tc)
5V, 10V
4.95mOhm @ 25A, 10V
±20V
2200 pF @ 25 V
115W (Tc)
26.7 nC @ 5 V
BUK655R0-75C,127
MOSFET N-CH 75V 120A TO220AB
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
TO-220AB
75 V
-55°C ~ 175°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
2.8V @ 1mA
120A (Tc)
4.5V, 10V
5.3mOhm @ 25A, 10V
±16V
11400 pF @ 25 V
263W (Tc)
177 nC @ 10 V
BUK6213-30C,118
NEXPERIA BUK6213-30C - 47A, 30V,
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
30 V
-55°C ~ 175°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
2.8V @ 1mA
47A (Tc)
10V
14mOhm @ 10A, 10V
±16V
1108 pF @ 25 V
60W (Tc)
19.5 nC @ 10 V
BUK6213-30C,118
MOSFET N-CH 30V 47A DPAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
30 V
-55°C ~ 175°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
2.8V @ 1mA
47A (Tc)
10V
14mOhm @ 10A, 10V
±16V
1108 pF @ 25 V
60W (Tc)
19.5 nC @ 10 V
BUK6610-75C,118
NEXPERIA BUK6610 - N-CHANNEL TRE
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
D2PAK
75 V
-55°C ~ 175°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
2.8V @ 1mA
78A (Tc)
10V
10mOhm @ 25A, 10V
±16V
5251 pF @ 25 V
158W (Tc)
81 nC @ 10 V
BUK6610-75C,118
MOSFET N-CH 75V 78A D2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
D2PAK
75 V
-55°C ~ 175°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
2.8V @ 1mA
78A (Tc)
10V
10mOhm @ 25A, 10V
±16V
5251 pF @ 25 V
158W (Tc)
81 nC @ 10 V
BUK662R5-30C,118
MOSFET N-CH 30V 100A D2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
D2PAK
30 V
-55°C ~ 175°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
2.8V @ 1mA
100A (Tc)
10V
2.8mOhm @ 25A, 10V
±16V
6960 pF @ 25 V
204W (Tc)
114 nC @ 10 V
BUK663R2-40C,118
NEXPERIA BUK663R2-40C - 100A, 40
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
D2PAK
40 V
-55°C ~ 175°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
2.8V @ 1mA
100A (Tc)
10V
3.2mOhm @ 25A, 10V
±16V
8020 pF @ 25 V
204W (Tc)
125 nC @ 10 V
BUK663R2-40C,118
MOSFET N-CH 40V 100A D2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
D2PAK
40 V
-55°C ~ 175°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
2.8V @ 1mA
100A (Tc)
10V
3.2mOhm @ 25A, 10V
±16V
8020 pF @ 25 V
204W (Tc)
125 nC @ 10 V
BUK6C3R3-75C,118
MOSFET N-CH 75V 181A D2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-7, D²Pak (6 Leads + Tab)
D2PAK-7
75 V
-55°C ~ 175°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
2.8V @ 1mA
181A (Tc)
10V
3.4mOhm @ 90A, 10V
±16V
15800 pF @ 25 V
300W (Tc)
253 nC @ 10 V
BUK6E2R3-40C,127
MOSFET N-CH 40V 120A I2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-262-3 Long Leads, I²Pak, TO-262AA
I2PAK
40 V
-55°C ~ 175°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
2.8V @ 1mA
120A (Tc)
10V
2.3mOhm @ 25A, 10V
±16V
15100 pF @ 25 V
306W (Tc)
260 nC @ 10 V
BUK6E3R2-55C,127
MOSFET N-CH 55V 120A I2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-262-3 Long Leads, I²Pak, TO-262AA
I2PAK
55 V
-55°C ~ 175°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
2.8V @ 1mA
120A (Tc)
10V
3.2mOhm @ 25A, 10V
±16V
15300 pF @ 25 V
306W (Tc)
258 nC @ 10 V
BUK7107-55AIE,118
MOSFET N-CH 55V 75A SOT426
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
D2PAK
55 V
-55°C ~ 175°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
Current Sensing
4V @ 1mA
75A (Tc)
10V
7mOhm @ 50A, 10V
±20V
4500 pF @ 25 V
272W (Tc)
116 nC @ 10 V
BUK7108-40AIE,118
MOSFET N-CH 40V 75A SOT426
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
D2PAK
40 V
-55°C ~ 175°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
Current Sensing
4V @ 1mA
75A (Tc)
10V
8mOhm @ 50A, 10V
±20V
3140 pF @ 25 V
221W (Tc)
84 nC @ 10 V
BUK7225-55A,118
MOSFET N-CH 55V 43A DPAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
55 V
-55°C ~ 175°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
4V @ 1mA
43A (Tc)
10V
25mOhm @ 25A, 10V
±20V
1310 pF @ 25 V
94W (Tc)
-
BUK7509-55A,127
MOSFET N-CH 55V 75A TO220AB
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
TO-220AB
55 V
-55°C ~ 175°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
4V @ 1mA
75A (Tc)
10V
9mOhm @ 25A, 10V
±20V
3271 pF @ 25 V
211W (Tc)
62 nC @ 0 V
BUK7509-55A,127
NEXPERIA BUK7509-55A - 75A, 55V,
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
TO-220AB
55 V
-55°C ~ 175°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
4V @ 1mA
75A (Tc)
10V
9mOhm @ 25A, 10V
±20V
3271 pF @ 25 V
211W (Tc)
62 nC @ 0 V
BUK752R3-40E,127
MOSFET N-CH 40V 120A TO220AB
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
TO-220AB
40 V
-55°C ~ 175°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
4V @ 1mA
120A (Tc)
10V
2.3mOhm @ 25A, 10V
±20V
8500 pF @ 25 V
293W (Tc)
109.2 nC @ 10 V

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.