FET, MOSFET Arrays

Results:
6,152
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Gate Charge (Qg) (Max) @ Vgs
Power - Max
Vgs(th) (Max) @ Id
Supplier Device Package
Package / Case
Drain to Source Voltage (Vdss)
Configuration
Operating Temperature
FET Type
FET Feature
Power Dissipation (Max)
Drive Voltage (Max Rds On, Min Rds On)
Technology
Vgs (Max)
Mounting Type
Qualification
Voltage - Supply
Logic Voltage - VIL, VIH
Rise / Fall Time (Typ)
Channel Type
Driven Configuration
Grade
Current - Peak Output (Source, Sink)
Input Type
Number of Drivers
Voltage - Rated
Gate Type
High Side Voltage - Max (Bootstrap)
Gain
Current Rating (Amps)
Noise Figure
Number of Outputs
Voltage - Test
Voltage - Supply Span (Max)
Program Memory Type
Gain Bandwidth Product
Current - Input Bias
EEPROM Size
Voltage - Input (Min)
Amplifier Type
Voltage - Isolation
Current - Test
Topology
Current - Supply
Oscillator Type
Voltage - Supply Span (Min)
Core Size
Connectivity
Program Memory Size
Data Converters
Current
Current - Output / Channel
Core Processor
Output Type
Voltage - Input (Max)
Current - Output
Output Configuration
Power - Output
Function
Frequency - Switching
Voltage
Voltage - Output
Voltage - Output (Min/Fixed)
Voltage - Supply (Vcc/Vdd)
Voltage - Input
Speed
Synchronous Rectifier
Applications
RAM Size
-3db Bandwidth
Number of I/O
Slew Rate
Peripherals
Voltage - Output (Max)
Voltage - Input Offset
Type
Frequency
Number of Circuits
Results remaining6,152
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ImageProduct DetailPriceAvailabilityECAD ModelSeriesMounting TypeOperating TemperaturePackage / CaseGradeTechnologyFET FeatureDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsPower - Max
RM3003S6
MOSFET N/P-CH 30V 3.5A TSOT23-6L
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
SOT-23-6 Thin, TSOT-23-6
-
MOSFET (Metal Oxide)
-
30V
3.5A (Ta), 2.7A (Ta)
5nC @ 10V
1.2W (Ta)
G170P02D32
MOSFET P+P-CH 20V 20A 15W DFN3*3
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
8-PowerVDFN
-
MOSFET (Metal Oxide)
Standard
20V
20A (Tc)
30nC @ 10V
FAM65CR51XZ1
APM16-CDA SF3 650V 51MOHM ALN Y
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Through Hole
-55°C ~ 150°C (TJ)
-
AEC-Q101
MOSFET (Metal Oxide)
-
650V
64A (Tc)
123nC @ 10V
-
CAB011A12GM3
SIC, MODULE, 11M, 1200V, 48 MM,
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Chassis Mount
-40°C ~ 150°C (TJ)
Module
-
Silicon Carbide (SiC)
Silicon Carbide (SiC)
1200V
141A (Tj)
354nC @ 15V
10mW
CCB016M12GM3
SIC, MODULE, 16M,1200V, 48 MM, G
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Chassis Mount
-40°C ~ 150°C (TJ)
Module
-
Silicon Carbide (SiC)
Silicon Carbide (SiC)
1200V
50A (Tj)
236nC @ 15V
10mW
AON6984
MOSFET 2N-CH 30V 19A/50A 8DFN
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
8-PowerWDFN
-
MOSFET (Metal Oxide)
Standard
30V
19A (Ta), 50A (Tc), 26A (Ta), 82A (Tc)
12.8nC @ 10V, 37nC @ 10V
3.1W (Ta), 21W (Tc), 3.1W (Ta), 31W (Tc)
RM10N40S8
MOSFET 2N-CH 40V 10A 8SOP
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Surface Mount
-50°C ~ 150°C (TJ)
8-SOIC (0.154", 3.90mm Width)
-
MOSFET (Metal Oxide)
-
40V
10A (Tc)
26nC @ 4.5V
RMD7N40DN
MOSFET 2N-CH 40V 7A/20A 8DFN
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
8-PowerWDFN
-
MOSFET (Metal Oxide)
-
40V
7A (Ta), 20A (Tc)
11nC @ 10V
RM3075S8(N)
MOSFET N/P-CH 30V 6.8A/4.6A 8SOP
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
8-SOIC (0.154", 3.90mm Width)
-
MOSFET (Metal Oxide)
-
30V
2W (Ta)
RM6602
MOSFET N/P-CH 30V 3.5A TSOT23-6L
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
SOT-23-6 Thin, TSOT-23-6
-
MOSFET (Metal Oxide)
-
30V
3.5A (Ta), 2.7A (Ta)
5nC @ 10V
1.2W (Ta)
SIA928DJ-T1-GE3
MOSFET 2N-CH 30V POWERPAK SC70-6
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Quantity
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PCB Symbol, Footprint & 3D Model
TrenchFET®
Surface Mount
-55°C ~ 150°C (TJ)
PowerPAK® SC-70-6 Dual
-
MOSFET (Metal Oxide)
-
30V
4.5A (Tc)
4.5nC @ 4.5V
7.8W
RM2004NE
MOSFET 2N-CH 20V 6A SOT23-6
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
SOT-23-6
-
MOSFET (Metal Oxide)
-
20V
6A (Ta)
8nC @ 4.5V
1.25W (Ta)
RM8810
MOSFET 2N-CH 20V 7A SOT23-6
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
SOT-23-6
-
MOSFET (Metal Oxide)
-
20V
7A (Ta)
14nC @ 4.5V
1.5W (Ta)
RM4953
MOSFET 2P-CH 30V 5.1A 8SOP
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
8-SOIC (0.154", 3.90mm Width)
-
MOSFET (Metal Oxide)
-
30V
5.1A (Ta)
11nC @ 10V
2.5W (Ta)
RM9926
MOSFET 2N-CH 20V 6A 8SOP
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
8-SOIC (0.154", 3.90mm Width)
-
MOSFET (Metal Oxide)
-
20V
6A (Ta)
10nC @ 4.5V
1.25W (Ta)
GSFK0501E
MOSFET 2P-CH 50V 0.18A SOT363
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Surface Mount
-50°C ~ 150°C (TJ)
6-TSSOP, SC-88, SOT-363
-
MOSFET (Metal Oxide)
Standard
50V
180mA (Ta)
530pC @ 10V
300mW (Ta)
SSF2220Y
MOSFET 2N-CH 20V 0.8A SOT563
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C
SOT-563, SOT-666
-
MOSFET (Metal Oxide)
Standard
20V
800mA (Tc)
1nC @ 4.5V
312W (Tc)
GSFK06002
MOSFET 2N-CH 50V 0.3A SOT363
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
6-TSSOP, SC-88, SOT-363
-
MOSFET (Metal Oxide)
Standard
50V
300mA (Ta)
580nC @ 4.5V
900mW (Ta)
GSF7002DW
MOSFET 2N-CH 60V 0.34A SOT363
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Surface Mount
150°C (TJ)
6-TSSOP, SC-88, SOT-363
-
MOSFET (Metal Oxide)
Standard
60V
340mA (Ta)
-
150mW (Ta)
BSS138AKDWHE3-TP
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
6-TSSOP, SC-88, SOT-363
Automotive
MOSFET (Metal Oxide)
Logic Level Gate
50V
220mA (Tc)
1.2nC @ 10V
320mW (Tj)

FET, MOSFET Arrays

Field-effect transistors (FETs) are electronic devices that utilize an electric field to regulate the flow of current. By applying a voltage to the gate terminal, the conductivity between the drain and source terminals can be modified. Unlike bipolar junction transistors, FETs are unipolar transistors, which means they rely on a single type of charge carrier for their operation. This can either be electrons or holes, but not both. One of the key advantages of FETs is their high input impedance at low frequencies. This property arises due to the fact that the gate terminal of an FET doesn't draw any current, as it's designed to function in a voltage-driven mode. As a result, the input impedance of an FET can be several orders of magnitude greater than that of a similarly configured bipolar transistor. Field-effect transistors come in various types, with the most common ones being Junction FETs (JFETs) and Metal Oxide Semiconductor FETs (MOSFETs). JFETs employ a reverse-biased pn-junction to control the flow of current, while MOSFETs use an oxide layer to insulate the gate from the channel region. FETs have numerous applications in electronics, including amplifiers, switches, oscillators, and voltage regulators. Due to their high input impedance, FETs are often used in circuits where low power consumption and minimal loading effects are crucial considerations. In summary, field-effect transistors (FETs) are electronic devices that utilize an electric field to control current flow. They are unipolar transistors that rely on a single type of charge carrier for their operation. FETs offer high input impedance at low frequencies, making them ideal for use in low power applications where signal quality is a critical factor.