BCP53H Series, Single Bipolar Transistors

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Frequency - Transition
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Vce Saturation (Max) @ Ib, Ic
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Voltage - Collector Emitter Breakdown (Max)
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BCP53H
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypePackage / CaseSupplier Device PackageOperating TemperatureVoltage - Collector Emitter Breakdown (Max)Transistor TypeCurrent - Collector (Ic) (Max)Vce Saturation (Max) @ Ib, IcCurrent - Collector Cutoff (Max)DC Current Gain (hFE) (Min) @ Ic, VcePower - MaxFrequency - TransitionQualificationGradeSeries
BCP53-10H,115
SMALL SIGNAL BIPOLAR TRANSISTOR
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-261-4, TO-261AA
SOT-223
175°C (TJ)
80 V
PNP
1 A
500mV @ 50mA, 500mA
100nA (ICBO)
63 @ 150mA, 2V
1.6 W
140MHz
AEC-Q101
Automotive
BCP53H
BCP53H,115
SMALL SIGNAL BIPOLAR TRANSISTOR
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-261-4, TO-261AA
SOT-223
175°C (TJ)
80 V
PNP
1 A
500mV @ 50mA, 500mA
100nA (ICBO)
63 @ 150mA, 2V
725 mW
140MHz
AEC-Q101
Automotive
BCP53H

Single Bipolar Transistors

Discrete bipolar junction transistors (BJTs) are frequently used in constructing analog signal amplifiers for applications such as audio and radio. As one of the earliest semiconductor devices to be mass-produced, their characteristics are not ideal for high frequency switching and high current or voltage operation, but they remain a popular choice for applications that require minimal noise and distortion when reproducing analog signals. The structure of a BJT consists of three doped semiconductor regions: the emitter, base, and collector. The base is sandwiched between the emitter and the collector, forming two p-n junctions. The base region is thin and lightly doped compared to the emitter and collector regions, to allow for control of the device's conductivity. BJTs can be characterized by their gain, bandwidth, collector-emitter saturation voltage, and breakdown voltage. The gain is the ratio of the output current to the input current, while bandwidth refers to the range of frequencies within which the transistor operates effectively. Collector-emitter saturation voltage is the voltage drop across the collector-emitter terminals when the transistor is switched on, and breakdown voltage is the maximum voltage that the transistor can withstand without suffering damage. Compared to other device types, BJTs have less favorable characteristics for high frequency switching and high current/voltage operation. However, they are still commonly used in applications requiring analog signal amplification with minimal noise and distortion. This is due to the fact that they have relatively low input and output impedance, making them ideal for use in circuits that require matching or buffering. In summary, discrete bipolar junction transistors (BJTs) are widely used in constructing analog signal amplifiers for applications such as audio and radio. While their characteristics may not be optimal for high frequency or high current/voltage applications, they remain a popular choice for applications requiring minimal noise and distortion when reproducing analog signals.