BST Series, Single Bipolar Transistors

Results:
12
Manufacturer
Series
Frequency - Transition
Vce Saturation (Max) @ Ib, Ic
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector Cutoff (Max)
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Transistor Type
Power - Max
Operating Temperature
Grade
Mounting Type
Supplier Device Package
Qualification
Package / Case
Results remaining12
Applied Filters:
BST
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeSupplier Device PackageOperating TemperaturePackage / CasePower - MaxGradeTransistor TypeCurrent - Collector (Ic) (Max)Voltage - Collector Emitter Breakdown (Max)Vce Saturation (Max) @ Ib, IcCurrent - Collector Cutoff (Max)DC Current Gain (hFE) (Min) @ Ic, VceFrequency - TransitionSeriesQualification
MMBT3906-EVL
Transistor,SOT-23,40V,200mA,PNP
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-
-50°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
350 mW
-
PNP
200 mA
40 V
400mV @ 5mA, 50mA
50nA
100 @ 10mA, 1V
250MHz
BST
-
MMBT4401-EVL
Transistor,SOT-23,40V,600mA,NPN
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-
-50°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
225 mW
-
NPN
600 mA
40 V
750mV @ 50mA, 500mA
100nA
100 @ 150mA, 1V
250MHz
BST
-
MMBT3906-EVL-CT
Transistor,SOT-23,40V,200mA,PNP
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-
-50°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
350 mW
-
PNP
200 mA
40 V
400mV @ 5mA, 50mA
50nA
100 @ 10mA, 1V
250MHz
BST
-
MMBT3904-EVL
Transistor,SOT-23,40V,200mA,NPN
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-
-50°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
225 mW
-
NPN
200 mA
40 V
300mV @ 5mA, 50mA
50nA
100 @ 10mA, 1V
300MHz
BST
-
MMBT2907A-EVL
Transistor,SOT-23,60V,600mA,PNP
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-
-50°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
225 mW
-
PNP
600 mA
60 V
1.6V @ 50mA, 500mA
50nA
100 @ 150mA, 10V
200MHz
BST
-
MMBT4401-EVL-CT
Transistor,SOT-23,40V,600mA,NPN
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-
-50°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
225 mW
-
NPN
600 mA
40 V
750mV @ 50mA, 500mA
100nA
100 @ 150mA, 1V
250MHz
BST
-
MMBT3904-EVL-CT
Transistor,SOT-23,40V,200mA,NPN
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-
-50°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
225 mW
-
NPN
200 mA
40 V
300mV @ 5mA, 50mA
50nA
100 @ 10mA, 1V
300MHz
BST
-
MMBT4403-EVL-CT
Transistor,SOT-23,40V,600mA,PNP
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-
-50°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
225 mW
-
PNP
600 mA
40 V
750mV @ 50mA, 500mA
100nA
100 @ 150mA, 2V
200MHz
BST
-
MMBT2222A-EVL-CT
Transistor,SOT-23,40V,600mA,NPN
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-
-50°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
225 mW
-
NPN
600 mA
40 V
1V @ 50mA, 500mA
10nA
100 @ 150mA, 10V
-
BST
-
MMBT2907A-EVL-CT
Transistor,SOT-23,60V,600mA,PNP
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-
-50°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
225 mW
-
PNP
600 mA
60 V
1.6V @ 50mA, 500mA
50nA
100 @ 150mA, 10V
200MHz
BST
-
MMBT4403-EVL
Transistor,SOT-23,40V,600mA,PNP
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-
-50°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
225 mW
-
PNP
600 mA
40 V
750mV @ 50mA, 500mA
100nA
100 @ 150mA, 2V
200MHz
BST
-
MMBT2222A-EVL
Transistor,SOT-23,40V,600mA,NPN
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-
-50°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
225 mW
-
NPN
600 mA
40 V
1V @ 50mA, 500mA
10nA
100 @ 150mA, 10V
-
BST
-

About  Single Bipolar Transistors

Discrete bipolar junction transistors (BJTs) are frequently used in constructing analog signal amplifiers for applications such as audio and radio. As one of the earliest semiconductor devices to be mass-produced, their characteristics are not ideal for high frequency switching and high current or voltage operation, but they remain a popular choice for applications that require minimal noise and distortion when reproducing analog signals. The structure of a BJT consists of three doped semiconductor regions: the emitter, base, and collector. The base is sandwiched between the emitter and the collector, forming two p-n junctions. The base region is thin and lightly doped compared to the emitter and collector regions, to allow for control of the device's conductivity. BJTs can be characterized by their gain, bandwidth, collector-emitter saturation voltage, and breakdown voltage. The gain is the ratio of the output current to the input current, while bandwidth refers to the range of frequencies within which the transistor operates effectively. Collector-emitter saturation voltage is the voltage drop across the collector-emitter terminals when the transistor is switched on, and breakdown voltage is the maximum voltage that the transistor can withstand without suffering damage. Compared to other device types, BJTs have less favorable characteristics for high frequency switching and high current/voltage operation. However, they are still commonly used in applications requiring analog signal amplification with minimal noise and distortion. This is due to the fact that they have relatively low input and output impedance, making them ideal for use in circuits that require matching or buffering. In summary, discrete bipolar junction transistors (BJTs) are widely used in constructing analog signal amplifiers for applications such as audio and radio. While their characteristics may not be optimal for high frequency or high current/voltage applications, they remain a popular choice for applications requiring minimal noise and distortion when reproducing analog signals.