SWITCHMODE™ Series, Single Bipolar Transistors

Results:
54
Manufacturer
Series
Vce Saturation (Max) @ Ib, Ic
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Supplier Device Package
Package / Case
Current - Collector Cutoff (Max)
Operating Temperature
Transistor Type
Grade
Mounting Type
Qualification
Results remaining54
Applied Filters:
SWITCHMODE™
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeTransistor TypeSupplier Device PackagePackage / CasePower - MaxOperating TemperatureSeriesCurrent - Collector (Ic) (Max)Voltage - Collector Emitter Breakdown (Max)Vce Saturation (Max) @ Ib, IcCurrent - Collector Cutoff (Max)DC Current Gain (hFE) (Min) @ Ic, VceFrequency - Transition
BUL146FG
TRANS NPN 400V 6A TO220FP
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
NPN
TO-220FP
TO-220-3 Full Pack
40 W
-65°C ~ 150°C (TJ)
SWITCHMODE™
6 A
400 V
700mV @ 600mA, 3A
100µA
14 @ 500mA, 5V
14MHz
MJ10004
TRANS NPN DARL 350V 20A TO3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
NPN - Darlington
TO-3
TO-204AA, TO-3
175 W
-65°C ~ 200°C (TJ)
SWITCHMODE™
20 A
350 V
3V @ 2A, 20A
250µA
50 @ 5A, 5V
-
MJE13007
TRANS NPN 400V 8A TO220
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
NPN
TO-220
TO-220-3
80 W
-65°C ~ 150°C (TJ)
SWITCHMODE™
8 A
400 V
3V @ 2A, 8A
100µA
5 @ 5A, 5V
14MHz
MJ10009
TRANS NPN DARL 500V 20A TO3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
NPN - Darlington
TO-3
TO-204AA, TO-3
175 W
-65°C ~ 200°C (TJ)
SWITCHMODE™
20 A
500 V
3.5V @ 2A, 20A
250µA
40 @ 5A, 5V
-
MJ10015
TRANS NPN DARL 400V 50A TO3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
NPN - Darlington
TO-3
TO-204AA, TO-3
250 W
-65°C ~ 200°C (TJ)
SWITCHMODE™
50 A
400 V
5V @ 10A, 50A
250µA
25 @ 20A, 5V
-
MJ10016
TRANS NPN DARL 500V 50A TO3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
NPN - Darlington
TO-3
TO-204AA, TO-3
250 W
-65°C ~ 200°C (TJ)
SWITCHMODE™
50 A
500 V
5V @ 10A, 50A
250µA
25 @ 20A, 5V
-
MJ10023
TRANS NPN DARL 400V 40A TO3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
NPN - Darlington
TO-3
TO-204AA, TO-3
250 W
-65°C ~ 200°C (TJ)
SWITCHMODE™
40 A
400 V
5V @ 5A, 40A
250µA
60 @ 10A, 5V
-
MJ10024
TRANS NPN DARL 750V 20A TO3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
NPN - Darlington
TO-3
TO-204AA, TO-3
250 W
-65°C ~ 200°C (TJ)
SWITCHMODE™
20 A
750 V
5V @ 5A, 20A
250µA
50 @ 5A, 5V
-
MJE13005
TRANS NPN 400V 4A TO220
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
NPN
TO-220
TO-220-3
2 W
-65°C ~ 150°C (TJ)
SWITCHMODE™
4 A
400 V
1V @ 1A, 4A
-
8 @ 2A, 5V
4MHz
MJ10001
TRANS NPN DARL 400V 20A TO3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
NPN - Darlington
TO-3
TO-204AA, TO-3
175 W
-65°C ~ 200°C (TJ)
SWITCHMODE™
20 A
400 V
3V @ 1A, 20A
250µA
50 @ 5A, 5V
-
MJE13003
TRANS NPN 400V 1.5A TO126
1+
$0.2535
5+
$0.2394
10+
$0.2254
Quantity
14,330 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
NPN
TO-126
TO-225AA, TO-126-3
1.4 W
-65°C ~ 150°C (TJ)
SWITCHMODE™
1.5 A
400 V
3V @ 500mA, 1.5A
-
8 @ 500mA, 2V
10MHz
MJE5852G
TRANS PNP 400V 8A TO220
1+
$2.1549
5+
$2.0352
10+
$1.9155
Quantity
4,698 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
PNP
TO-220
TO-220-3
80 W
-65°C ~ 150°C (TJ)
SWITCHMODE™
8 A
400 V
5V @ 3A, 8A
-
5 @ 5A, 5V
-
MJF18008G
TRANS NPN 450V 8A TO220FP
1+
$2.1549
5+
$2.0352
10+
$1.9155
Quantity
188 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
NPN
TO-220FP
TO-220-3 Full Pack
45 W
-65°C ~ 150°C (TJ)
SWITCHMODE™
8 A
450 V
700mV @ 900mA, 4.5V
100µA
14 @ 1A, 5V
13MHz
MJE5850
TRANS PNP 300V 8A TO220
Contact us
Quantity
1 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
PNP
TO-220
TO-220-3
80 W
-65°C ~ 150°C (TJ)
SWITCHMODE™
8 A
300 V
5V @ 3A, 8A
-
5 @ 5A, 5V
-
MJE13007
TRANS NPN 400V 8A TO220
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
NPN
TO-220
TO-220-3
80 W
-65°C ~ 150°C (TJ)
SWITCHMODE™
8 A
400 V
3V @ 2A, 8A
100µA
5 @ 5A, 5V
14MHz
BUH100
TRANS NPN 700V 10A TO220
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
NPN
TO-220
TO-220-3
100 W
-60°C ~ 150°C (TJ)
SWITCHMODE™
10 A
700 V
750mV @ 1.5A, 7A
100µA
10 @ 5A, 5V
23MHz
BUH50G
TRANS NPN 500V 4A TO220
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
NPN
TO-220
TO-220-3
50 W
-65°C ~ 150°C (TJ)
SWITCHMODE™
4 A
500 V
1V @ 1A, 3A
100µA
5 @ 2A, 5V
4MHz
BUL44G
TRANS NPN 400V 2A TO220
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
NPN
TO-220
TO-220-3
50 W
-65°C ~ 150°C (TJ)
SWITCHMODE™
2 A
400 V
600mV @ 200mA, 1A
100µA
14 @ 200mA, 5V
13MHz
MJE5852
TRANS PNP 400V 8A TO220
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
PNP
TO-220
TO-220-3
80 W
-65°C ~ 150°C (TJ)
SWITCHMODE™
8 A
400 V
5V @ 3A, 8A
-
5 @ 5A, 5V
-
MJE18008
TRANS NPN 450V 8A TO220
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
NPN
TO-220
TO-220-3
125 W
-65°C ~ 150°C (TJ)
SWITCHMODE™
8 A
450 V
700mV @ 900mA, 4.5V
100µA
14 @ 1A, 5V
13MHz

About  Single Bipolar Transistors

Discrete bipolar junction transistors (BJTs) are frequently used in constructing analog signal amplifiers for applications such as audio and radio. As one of the earliest semiconductor devices to be mass-produced, their characteristics are not ideal for high frequency switching and high current or voltage operation, but they remain a popular choice for applications that require minimal noise and distortion when reproducing analog signals. The structure of a BJT consists of three doped semiconductor regions: the emitter, base, and collector. The base is sandwiched between the emitter and the collector, forming two p-n junctions. The base region is thin and lightly doped compared to the emitter and collector regions, to allow for control of the device's conductivity. BJTs can be characterized by their gain, bandwidth, collector-emitter saturation voltage, and breakdown voltage. The gain is the ratio of the output current to the input current, while bandwidth refers to the range of frequencies within which the transistor operates effectively. Collector-emitter saturation voltage is the voltage drop across the collector-emitter terminals when the transistor is switched on, and breakdown voltage is the maximum voltage that the transistor can withstand without suffering damage. Compared to other device types, BJTs have less favorable characteristics for high frequency switching and high current/voltage operation. However, they are still commonly used in applications requiring analog signal amplification with minimal noise and distortion. This is due to the fact that they have relatively low input and output impedance, making them ideal for use in circuits that require matching or buffering. In summary, discrete bipolar junction transistors (BJTs) are widely used in constructing analog signal amplifiers for applications such as audio and radio. While their characteristics may not be optimal for high frequency or high current/voltage applications, they remain a popular choice for applications requiring minimal noise and distortion when reproducing analog signals.