SOT-23 Series, Single Bipolar Transistors

Results:
43
Manufacturer
Series
DC Current Gain (hFE) (Min) @ Ic, Vce
Vce Saturation (Max) @ Ib, Ic
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Current - Collector (Ic) (Max)
Current - Collector Cutoff (Max)
Power - Max
Supplier Device Package
Operating Temperature
Transistor Type
Grade
Mounting Type
Qualification
Package / Case
Results remaining43
Applied Filters:
SOT-23
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperaturePackage / CaseVoltage - Collector Emitter Breakdown (Max)Power - MaxSupplier Device PackageSeriesTransistor TypeVce Saturation (Max) @ Ib, IcCurrent - Collector Cutoff (Max)DC Current Gain (hFE) (Min) @ Ic, VceFrequency - TransitionCurrent - Collector (Ic) (Max)
MMBT2907A
MDD
TRANS PNP 60V SOT23
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
60 V
250 mW
SOT-23
SOT-23
PNP
1.6V @ 15mA, 500mA
20nA (ICBO)
100 @ 150mA, 10V
200MHz
-
MMBT4401
MDD
TRANS NPN 40V 0.6A SOT23
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
40 V
300 mW
SOT-23
SOT-23
NPN
400mV @ 15mA, 150mA
100nA
300 @ 150mA, 1V
250MHz
600 mA
MMBT2222A
MDD
TRANS NPN 40V SOT23
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
40 V
300 mW
SOT-23
SOT-23
NPN
1V @ 50mA, 500mA
100nA (ICBO)
100 @ 150mA, 10V
300MHz
-
MMBT5551
MDD
TRANS NPN 160V 0.6A SOT23
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
160 V
300 mW
SOT-23
SOT-23
NPN
200mV @ 5mA, 50mA
50nA (ICBO)
100 @ 10mA, 5V
300MHz
600 mA
MMBT5401
MDD
TRANS PNP 160V SOT23
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
160 V
300 mW
SOT-23
SOT-23
PNP
1V @ 5mA, 50mA
100nA (ICBO)
80 @ 1mA, 5V
100MHz
-
MMBT3906
MDD
TRANS PNP 40V 0.2A SOT23
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
40 V
200 mW
SOT-23
SOT-23
PNP
300mV @ 5mA, 50mA
100nA
100 @ 10mA, 1V
300MHz
200 mA
MMBTA42
MDD
TRANS NPN 300V 0.5A SOT23
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
300 V
350 mW
SOT-23
SOT-23
NPN
200mV @ 2mA, 20mA
250nA (ICBO)
60 @ 1mA, 10V
50MHz
100 mA
MMBT3906
TRANS PNP 40V 0.2A SOT23
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
40 V
200 mW
SOT-23
SOT-23
PNP
300mV @ 5mA, 50mA
100nA
100 @ 10mA, 1V
300MHz
200 mA
BC846A
TRANS NPN 65V 0.1A SOT23
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
65 V
200 mW
SOT-23
SOT-23
NPN
500mV @ 5mA, 100mA
100nA (ICBO)
110 @ 2mA, 5V
100MHz
100 mA
BC848A
TRANS NPN 30V 0.1A SOT23
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
30 V
200 mW
SOT-23
SOT-23
NPN
500mV @ 5mA, 100mA
100nA (ICBO)
110 @ 2mA, 5V
100MHz
100 mA
MMBT4403
TRANS PNP 40V 0.6A SOT23
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
40 V
300 mW
SOT-23
SOT-23
PNP
400mV @ 15mA, 150mA
100nA
100 @ 150mA, 2V
200MHz
600 mA
MMBT5401
TRANS PNP 160V SOT23
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
160 V
300 mW
SOT-23
SOT-23
PNP
1V @ 5mA, 50mA
100nA (ICBO)
80 @ 1mA, 5V
100MHz
-
MMBT5551
TRANS NPN 160V 0.6A SOT23
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
160 V
300 mW
SOT-23
SOT-23
NPN
200mV @ 5mA, 50mA
50nA (ICBO)
100 @ 10mA, 5V
300MHz
600 mA
MMBT2222A
TRANS NPN 40V SOT23
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
40 V
300 mW
SOT-23
SOT-23
NPN
1V @ 50mA, 500mA
100nA (ICBO)
100 @ 150mA, 10V
300MHz
-
MMBT2907A
TRANS PNP 60V SOT23
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
60 V
250 mW
SOT-23
SOT-23
PNP
1.6V @ 15mA, 500mA
20nA (ICBO)
100 @ 150mA, 10V
200MHz
-
MMBT3904
TRANS NPN 40V SOT23
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
40 V
200 mW
SOT-23
SOT-23
NPN
300mV @ 5mA, 50mA
100nA (ICBO)
100 @ 10mA, 1V
300MHz
-
MMBT4401
TRANS NPN 40V 0.6A SOT23
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
40 V
300 mW
SOT-23
SOT-23
NPN
400mV @ 15mA, 150mA
100nA
300 @ 150mA, 1V
250MHz
600 mA
MMBTA42
TRANS NPN 300V 0.5A SOT23
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
300 V
350 mW
SOT-23
SOT-23
NPN
200mV @ 2mA, 20mA
250nA (ICBO)
60 @ 1mA, 10V
50MHz
100 mA
BC847A
TRANS NPN 45V 0.1A SOT23
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
45 V
200 mW
SOT-23
SOT-23
NPN
500mV @ 5mA, 100mA
100nA (ICBO)
110 @ 2mA, 5V
100MHz
100 mA
BC848B
TRANS NPN 30V 0.1A SOT23
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
30 V
200 mW
SOT-23
SOT-23
NPN
500mV @ 5mA, 100mA
100nA (ICBO)
200 @ 2mA, 5V
100MHz
100 mA

About  Single Bipolar Transistors

Discrete bipolar junction transistors (BJTs) are frequently used in constructing analog signal amplifiers for applications such as audio and radio. As one of the earliest semiconductor devices to be mass-produced, their characteristics are not ideal for high frequency switching and high current or voltage operation, but they remain a popular choice for applications that require minimal noise and distortion when reproducing analog signals. The structure of a BJT consists of three doped semiconductor regions: the emitter, base, and collector. The base is sandwiched between the emitter and the collector, forming two p-n junctions. The base region is thin and lightly doped compared to the emitter and collector regions, to allow for control of the device's conductivity. BJTs can be characterized by their gain, bandwidth, collector-emitter saturation voltage, and breakdown voltage. The gain is the ratio of the output current to the input current, while bandwidth refers to the range of frequencies within which the transistor operates effectively. Collector-emitter saturation voltage is the voltage drop across the collector-emitter terminals when the transistor is switched on, and breakdown voltage is the maximum voltage that the transistor can withstand without suffering damage. Compared to other device types, BJTs have less favorable characteristics for high frequency switching and high current/voltage operation. However, they are still commonly used in applications requiring analog signal amplification with minimal noise and distortion. This is due to the fact that they have relatively low input and output impedance, making them ideal for use in circuits that require matching or buffering. In summary, discrete bipolar junction transistors (BJTs) are widely used in constructing analog signal amplifiers for applications such as audio and radio. While their characteristics may not be optimal for high frequency or high current/voltage applications, they remain a popular choice for applications requiring minimal noise and distortion when reproducing analog signals.