Military, MIL-PRF-19500/560 Series, Single Bipolar Transistors

Results:
6
Manufacturer
Series
Supplier Device Package
Package / Case
Operating Temperature
Current - Collector (Ic) (Max)
Mounting Type
Frequency - Transition
Vce Saturation (Max) @ Ib, Ic
Grade
Voltage - Collector Emitter Breakdown (Max)
Qualification
Transistor Type
Power - Max
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Results remaining6
Applied Filters:
Military, MIL-PRF-19500/560
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperaturePackage / CaseTransistor TypePower - MaxGradeSeriesCurrent - Collector (Ic) (Max)Voltage - Collector Emitter Breakdown (Max)Vce Saturation (Max) @ Ib, IcCurrent - Collector Cutoff (Max)DC Current Gain (hFE) (Min) @ Ic, VceFrequency - TransitionSupplier Device PackageQualification
JANTXV2N5339P
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 200°C
TO-205AD, TO-39-3 Metal Can
NPN
1 W
-
Military, MIL-PRF-19500/560
5 A
100 V
1.2V @ 500mA, 5A
100µA
60 @ 2A, 2V
-
TO-39 (TO-205AD)
-
JAN2N5339U3
TRANS NPN 100V 100UA U-3
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
TO-276AA
NPN
1 W
-
Military, MIL-PRF-19500/560
100 µA
100 V
1.2V @ 500mA, 5A
100µA
60 @ 2A, 2V
-
U-3 (TO-276AA)
-
JANS2N5339U3/TR
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
5-SMD
NPN
1 W
-
Military, MIL-PRF-19500/560
5 A
100 V
1.2V @ 500mA, 5A
100µA
60 @ 2A, 2V
-
SMD5
-
JANS2N5339
TRANS NPN 100V 100UA TO39
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C (TJ)
TO-205AD, TO-39-3 Metal Can
NPN
1 W
-
Military, MIL-PRF-19500/560
100 µA
100 V
1.2V @ 500mA, 5A
100µA
60 @ 2A, 2V
-
TO-39 (TO-205AD)
-
JANTXV2N5339U3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
TO-276AA
NPN
1 W
-
Military, MIL-PRF-19500/560
5 A
100 V
1.2V @ 500mA, 5A
100µA
60 @ 2A, 2V
-
U-3 (TO-276AA)
-
JANTX2N5339U3
TRANS NPN 100V 100UA U-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
TO-276AA
NPN
1 W
-
Military, MIL-PRF-19500/560
100 µA
100 V
1.2V @ 500mA, 5A
100µA
60 @ 2A, 2V
-
U-3 (TO-276AA)
-

About  Single Bipolar Transistors

Discrete bipolar junction transistors (BJTs) are frequently used in constructing analog signal amplifiers for applications such as audio and radio. As one of the earliest semiconductor devices to be mass-produced, their characteristics are not ideal for high frequency switching and high current or voltage operation, but they remain a popular choice for applications that require minimal noise and distortion when reproducing analog signals. The structure of a BJT consists of three doped semiconductor regions: the emitter, base, and collector. The base is sandwiched between the emitter and the collector, forming two p-n junctions. The base region is thin and lightly doped compared to the emitter and collector regions, to allow for control of the device's conductivity. BJTs can be characterized by their gain, bandwidth, collector-emitter saturation voltage, and breakdown voltage. The gain is the ratio of the output current to the input current, while bandwidth refers to the range of frequencies within which the transistor operates effectively. Collector-emitter saturation voltage is the voltage drop across the collector-emitter terminals when the transistor is switched on, and breakdown voltage is the maximum voltage that the transistor can withstand without suffering damage. Compared to other device types, BJTs have less favorable characteristics for high frequency switching and high current/voltage operation. However, they are still commonly used in applications requiring analog signal amplification with minimal noise and distortion. This is due to the fact that they have relatively low input and output impedance, making them ideal for use in circuits that require matching or buffering. In summary, discrete bipolar junction transistors (BJTs) are widely used in constructing analog signal amplifiers for applications such as audio and radio. While their characteristics may not be optimal for high frequency or high current/voltage applications, they remain a popular choice for applications requiring minimal noise and distortion when reproducing analog signals.