Military, MIL-PRF-19500/512 Series, Single Bipolar Transistors

Results:
14
Manufacturer
Series
Supplier Device Package
Package / Case
Operating Temperature
Mounting Type
Power - Max
Current - Collector Cutoff (Max)
Frequency - Transition
Current - Collector (Ic) (Max)
Vce Saturation (Max) @ Ib, Ic
Grade
Voltage - Collector Emitter Breakdown (Max)
Qualification
Transistor Type
DC Current Gain (hFE) (Min) @ Ic, Vce
Results remaining14
Applied Filters:
Military, MIL-PRF-19500/512
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperaturePackage / CaseVoltage - Collector Emitter Breakdown (Max)Power - MaxSupplier Device PackageGradeSeriesTransistor TypeCurrent - Collector (Ic) (Max)Vce Saturation (Max) @ Ib, IcCurrent - Collector Cutoff (Max)DC Current Gain (hFE) (Min) @ Ic, VceFrequency - TransitionQualification
JAN2N4033UA/TR
Contact us
Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
4-SMD, No Lead
80 V
500 mW
UA
-
Military, MIL-PRF-19500/512
PNP
1 A
1V @ 100mA, 1A
25nA
100 @ 100mA, 5V
-
-
JANS2N4033UB
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
4-SMD, No Lead
80 V
500 mW
UB
-
Military, MIL-PRF-19500/512
PNP
1 A
1V @ 100mA, 1A
10µA (ICBO)
100 @ 100mA, 5V
-
-
JANS2N4033UB/TR
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
4-SMD, No Lead
80 V
500 mW
UB
-
Military, MIL-PRF-19500/512
PNP
1 A
1V @ 100mA, 1A
10µA (ICBO)
100 @ 100mA, 5V
-
-
JANTXV2N4033UA
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
4-SMD, No Lead
80 V
500 mW
UA
-
Military, MIL-PRF-19500/512
PNP
1 A
1V @ 100mA, 1A
10µA (ICBO)
100 @ 100mA, 5V
-
-
JANTXV2N4033UA/TR
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
4-SMD, No Lead
80 V
500 mW
UA
-
Military, MIL-PRF-19500/512
PNP
1 A
1V @ 100mA, 1A
25nA
100 @ 100mA, 5V
-
-
JAN2N4033UA
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
4-SMD, No Lead
80 V
500 mW
UA
-
Military, MIL-PRF-19500/512
PNP
1 A
1V @ 100mA, 1A
10µA (ICBO)
100 @ 100mA, 5V
-
-
JAN2N4033UB/TR
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
3-SMD, No Lead
80 V
500 mW
UB
-
Military, MIL-PRF-19500/512
PNP
1 A
1V @ 100mA, 1A
25nA
100 @ 100mA, 5V
-
-
JANS2N4033UA
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
4-SMD, No Lead
80 V
500 mW
UA
-
Military, MIL-PRF-19500/512
PNP
1 A
1V @ 100mA, 1A
10µA (ICBO)
100 @ 100mA, 5V
-
-
JANTXV2N4033UB
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
4-SMD, No Lead
80 V
500 mW
UB
-
Military, MIL-PRF-19500/512
PNP
1 A
1V @ 100mA, 1A
10µA (ICBO)
100 @ 100mA, 5V
-
-
JANS2N4033
TRANS PNP 80V 1A TO39
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 200°C (TJ)
TO-205AD, TO-39-3 Metal Can
80 V
800 mW
TO-39 (TO-205AD)
-
Military, MIL-PRF-19500/512
PNP
1 A
1V @ 100mA, 1A
10µA (ICBO)
100 @ 100mA, 5V
-
-
JANTX2N4033UA/TR
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
4-SMD, No Lead
80 V
500 mW
UA
-
Military, MIL-PRF-19500/512
PNP
1 A
1V @ 100mA, 1A
25nA
100 @ 100mA, 5V
-
-
JANTX2N4033UA
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
4-SMD, No Lead
80 V
500 mW
UA
-
Military, MIL-PRF-19500/512
PNP
1 A
1V @ 100mA, 1A
10µA (ICBO)
100 @ 100mA, 5V
-
-
JANS2N4029
TRANS PNP 80V 1A TO18
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 200°C (TJ)
TO-206AA, TO-18-3 Metal Can
80 V
500 mW
TO-18 (TO-206AA)
-
Military, MIL-PRF-19500/512
PNP
1 A
1V @ 100mA, 1A
10µA (ICBO)
100 @ 100mA, 5V
-
-
JANS2N4033UA/TR
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
4-SMD, No Lead
80 V
500 mW
UA
-
Military, MIL-PRF-19500/512
PNP
1 A
1V @ 100mA, 1A
10µA (ICBO)
100 @ 100mA, 5V
-
-

About  Single Bipolar Transistors

Discrete bipolar junction transistors (BJTs) are frequently used in constructing analog signal amplifiers for applications such as audio and radio. As one of the earliest semiconductor devices to be mass-produced, their characteristics are not ideal for high frequency switching and high current or voltage operation, but they remain a popular choice for applications that require minimal noise and distortion when reproducing analog signals. The structure of a BJT consists of three doped semiconductor regions: the emitter, base, and collector. The base is sandwiched between the emitter and the collector, forming two p-n junctions. The base region is thin and lightly doped compared to the emitter and collector regions, to allow for control of the device's conductivity. BJTs can be characterized by their gain, bandwidth, collector-emitter saturation voltage, and breakdown voltage. The gain is the ratio of the output current to the input current, while bandwidth refers to the range of frequencies within which the transistor operates effectively. Collector-emitter saturation voltage is the voltage drop across the collector-emitter terminals when the transistor is switched on, and breakdown voltage is the maximum voltage that the transistor can withstand without suffering damage. Compared to other device types, BJTs have less favorable characteristics for high frequency switching and high current/voltage operation. However, they are still commonly used in applications requiring analog signal amplification with minimal noise and distortion. This is due to the fact that they have relatively low input and output impedance, making them ideal for use in circuits that require matching or buffering. In summary, discrete bipolar junction transistors (BJTs) are widely used in constructing analog signal amplifiers for applications such as audio and radio. While their characteristics may not be optimal for high frequency or high current/voltage applications, they remain a popular choice for applications requiring minimal noise and distortion when reproducing analog signals.