Military, MIL-PRF-19500/455 Series, Single Bipolar Transistors

Results:
16
Manufacturer
Series
Supplier Device Package
Package / Case
Vce Saturation (Max) @ Ib, Ic
Mounting Type
Voltage - Collector Emitter Breakdown (Max)
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Operating Temperature
Frequency - Transition
Current - Collector (Ic) (Max)
Grade
Qualification
Transistor Type
Current - Collector Cutoff (Max)
Results remaining16
Applied Filters:
Military, MIL-PRF-19500/455
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureTransistor TypeGradePackage / CaseSeriesCurrent - Collector (Ic) (Max)Voltage - Collector Emitter Breakdown (Max)Vce Saturation (Max) @ Ib, IcCurrent - Collector Cutoff (Max)DC Current Gain (hFE) (Min) @ Ic, VcePower - MaxFrequency - TransitionSupplier Device PackageQualification
JANTXV2N5664P
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C (TJ)
NPN
-
TO-213AA, TO-66-2
Military, MIL-PRF-19500/455
5 A
200 V
400mV @ 300mA, 3A
200nA
40 @ 1A, 5V
2.5 W
-
TO-66 (TO-213AA)
-
JANTX2N5666U3
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
NPN
-
TO-276AA
Military, MIL-PRF-19500/455
5 A
200 V
1V @ 1A, 5A
200nA
40 @ 1A, 5V
1.2 W
-
U-3 (TO-276AA)
-
JANS2N5667S
TRANS NPN 300V 5A TO39
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C (TJ)
NPN
-
TO-205AD, TO-39-3 Metal Can
Military, MIL-PRF-19500/455
5 A
300 V
1V @ 1A, 5A
200nA
25 @ 1A, 5V
1.2 W
-
TO-39 (TO-205AD)
-
JAN2N5666U3
TRANS NPN 200V 5A U-3
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
NPN
-
TO-276AA
Military, MIL-PRF-19500/455
5 A
200 V
1V @ 1A, 5A
200nA
40 @ 1A, 5V
1.2 W
-
U-3 (TO-276AA)
-
JANS2N5664
TRANS NPN 200V 5A TO66
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C (TJ)
NPN
-
TO-213AA, TO-66-2
Military, MIL-PRF-19500/455
5 A
200 V
1V @ 1A, 5A
200nA
40 @ 1A, 5V
2.5 W
-
TO-66 (TO-213AA)
-
JANS2N5666
TRANS NPN 200V 5A TO5
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C (TJ)
NPN
-
TO-205AA, TO-5-3 Metal Can
Military, MIL-PRF-19500/455
5 A
200 V
1V @ 1A, 5A
200nA
40 @ 1A, 5V
1.2 W
-
TO-5AA
-
JANTX2N5664P
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C (TJ)
NPN
-
TO-213AA, TO-66-2
Military, MIL-PRF-19500/455
5 A
200 V
400mV @ 300mA, 3A
200nA
40 @ 1A, 5V
2.5 W
-
TO-66 (TO-213AA)
-
JANS2N5666S
TRANS NPN 200V 5A TO39
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C (TJ)
NPN
-
TO-205AD, TO-39-3 Metal Can
Military, MIL-PRF-19500/455
5 A
200 V
1V @ 1A, 5A
200nA
40 @ 1A, 5V
1.2 W
-
TO-39 (TO-205AD)
-
JANTXV2N5664
TRANS NPN 200V 5A TO66
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C (TJ)
NPN
TO-213AA, TO-66-2
Military, MIL-PRF-19500/455
5 A
200 V
1V @ 1A, 5A
200nA
40 @ 1A, 5V
2.5 W
-
TO-66 (TO-213AA)
JAN2N5666S
TRANS NPN 200V 5A TO39
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C (TJ)
NPN
TO-205AD, TO-39-3 Metal Can
Military, MIL-PRF-19500/455
5 A
200 V
1V @ 1A, 5A
200nA
40 @ 1A, 5V
1.2 W
-
TO-39 (TO-205AD)
JANTX2N5666S
TRANS NPN 200V 5A TO39
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C (TJ)
NPN
TO-205AD, TO-39-3 Metal Can
Military, MIL-PRF-19500/455
5 A
200 V
1V @ 1A, 5A
200nA
40 @ 1A, 5V
1.2 W
-
TO-39 (TO-205AD)
JAN2N5667S
TRANS NPN 300V 5A TO39
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C (TJ)
NPN
TO-205AD, TO-39-3 Metal Can
Military, MIL-PRF-19500/455
5 A
300 V
1V @ 1A, 5A
200nA
25 @ 1A, 5V
1.2 W
-
TO-39 (TO-205AD)
JANTX2N5667S
TRANS NPN 300V 5A TO39
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C (TJ)
NPN
TO-205AD, TO-39-3 Metal Can
Military, MIL-PRF-19500/455
5 A
300 V
1V @ 1A, 5A
200nA
25 @ 1A, 5V
1.2 W
-
TO-39 (TO-205AD)
JAN2N5664P
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C (TJ)
NPN
-
TO-213AA, TO-66-2
Military, MIL-PRF-19500/455
5 A
200 V
400mV @ 300mA, 3A
200nA
40 @ 1A, 5V
2.5 W
-
TO-66 (TO-213AA)
-
JANTXV2N5666U3
Contact us
Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
NPN
3-SMD, Flat Lead
Military, MIL-PRF-19500/455
5 A
200 V
1V @ 1A, 5A
200nA
40 @ 1A, 5V
1.2 W
-
U3
JANS2N5667
TRANS NPN 300V 5A TO5
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C (TJ)
NPN
TO-205AA, TO-5-3 Metal Can
Military, MIL-PRF-19500/455
5 A
300 V
1V @ 1A, 5A
200nA
25 @ 1A, 5V
1.2 W
-
TO-5

Single Bipolar Transistors

Discrete bipolar junction transistors (BJTs) are frequently used in constructing analog signal amplifiers for applications such as audio and radio. As one of the earliest semiconductor devices to be mass-produced, their characteristics are not ideal for high frequency switching and high current or voltage operation, but they remain a popular choice for applications that require minimal noise and distortion when reproducing analog signals. The structure of a BJT consists of three doped semiconductor regions: the emitter, base, and collector. The base is sandwiched between the emitter and the collector, forming two p-n junctions. The base region is thin and lightly doped compared to the emitter and collector regions, to allow for control of the device's conductivity. BJTs can be characterized by their gain, bandwidth, collector-emitter saturation voltage, and breakdown voltage. The gain is the ratio of the output current to the input current, while bandwidth refers to the range of frequencies within which the transistor operates effectively. Collector-emitter saturation voltage is the voltage drop across the collector-emitter terminals when the transistor is switched on, and breakdown voltage is the maximum voltage that the transistor can withstand without suffering damage. Compared to other device types, BJTs have less favorable characteristics for high frequency switching and high current/voltage operation. However, they are still commonly used in applications requiring analog signal amplification with minimal noise and distortion. This is due to the fact that they have relatively low input and output impedance, making them ideal for use in circuits that require matching or buffering. In summary, discrete bipolar junction transistors (BJTs) are widely used in constructing analog signal amplifiers for applications such as audio and radio. While their characteristics may not be optimal for high frequency or high current/voltage applications, they remain a popular choice for applications requiring minimal noise and distortion when reproducing analog signals.